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AOW10N60

AOW10N60

  • 厂商:

    AOSMD(美国万代)

  • 封装:

    SOT226

  • 描述:

    MOSFET N-CH 600V 10A TO262

  • 数据手册
  • 价格&库存
AOW10N60 数据手册
AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS TO-262 ID (at VGS=10V) 700V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75Ω 100% UIS Tested 100% Rg Tested TO-262F D Top View Bottom View Top View Bottom View G G D S S D G S G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOW10N60 Symbol AOWF10N60 Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 10 ID Units V 10* 7.2 7.2* A Pulsed Drain Current C IDM 36 Avalanche Current C IAR 4.4 A Repetitive avalanche energy C EAR 290 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 580 5 mJ V/ns W PD 28 2 0.22 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOW10N60 65 AOWF10N60 65 Units °C/W 0.5 0.5 -4.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev2: June 2010 250 www.aosmd.com Page 1 of 6 AOW10N60/AOWF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.65 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 0.75 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.6 gFS Forward Transconductance VDS=40V, ID=5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current 36 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=480V, ID=10A VGS=10V, VDS=300V, ID=10A, RG=25Ω IF=10A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V S 0.73 1100 1320 1600 pF 105 130 170 pF 7.5 9.3 14 pF 3 3.8 6 Ω 31 40 nC 6 10 nC 14.4 22 nC 28 35 ns 66 80 ns 76 95 ns 64 80 ns 290 350 3.9 4.7 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using
AOW10N60 价格&库存

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