1N53
SILICON MIXER DIODE
PACKAGE STYLE DO- 36
DESCRIPTION:
The ASI 1N53 is a Silicon Mixer Diode Designed for low noise performance in Ka-Band Applications Operating up to 35 GHz.
FEATURES:
• • Low Noise Fugure W ider Bandwith than cartridge diodes inX Band
NONE
CHARACTERISTICS
SYMBOL
NF VSWR ZIF RL = 100 Ω
TC = 25 C
O
TEST CONDITIONS
F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFIif = 1.5 dB
MINIMUM TYPICAL
MAXIM
13.1 1.6
UNITS
dB
f = 1000 Hz Plo = 1.0 mW IF = 30 MHz NFIif = 1.5 dB
400 35
800
Ω GHz
F = 9375 MHz Test Frequency RL = 100 Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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