2SK410

2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. D C A 3 1 2x Ø N FU LL R 2 4 E FEATURES: • PG = 17 dB typ. at 100 W/28 MHz • Omnigold™ Metalization System • Common Source configuration • RoHS compliant G H D IM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3.81 M IN IM U M in ch es / m m B .725/18,42 F K J I L M M A X IM U M inc he s / m m .150 / 3.43 .045 / 1.14 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .125 / 3.18 . 725 / 18.42 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 MAXIMUM RATINGS ID VDSS VGSS PCH TCH TSTG 8A 180 V ±20 V 120 W @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C 1 = COLLECTOR 2 = BASE 3&4 = EMITTER CHARACTERISTICS SYMBOL V(BR)DSS V(BR)GSS VGS(OFF) IDSS VDS(on) |γfs| CISS COSS CRSS POUT η TC = 25 °C NONETEST CONDITIONS IC = 100 mA IG = ±100 µA ID = 1.0 mA VDSS = 180 V ID = 4.0 A ID = 3.0 A VGS = 5.0 V VGS = -5.0 V VGS = VDS = 0 V VDS = 10 V VGS = 0 V VGS = 10 V VDS = 20 V VDS = 0.0 V VDS = 50. V VGD = - 50. V VDD = 80 V IDQ =100 mA f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 180 ±20 0.5 3.8 0.9 1.25 350 220 15 140 80 3.0 1.0 6.0 UNITS V V V mA V S pF f = 28 MHz PIN = 5 W W % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1