AM81214-030

AM81214-030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM81214-030 is Designed for 1215 – 1400 MHz, L-Band Radar Applications. PACKAGE STYLE .250 2L FLG FEATURES: • Internal Input/Output Matching Network • PG = 7.2 dB at 5.0 W(peak)/1400 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 2.75 A 32 V 63 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 2.4 °C/W COMMON BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PIN PG ηC VCC = 28 V IC = 10 mA IC = 20 mA IE = 1.0 mA VCE = 28 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.5 5.0 UNITS V V V mA --W dB % VCE = 5.0 V IC = 1.0 A 15 26 36 8.5 49 150 PIN = 5.0 W f = 1215 to 1400 MHz 7.2 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1