AM81214-300

AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. PACKAGE STYLE .400 2L FLG(A) 4x .062 x 45° 2 xB A .040 x 45° C F E FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System DIM A D G H J K P 2xR I L N M M IN IM UM inches / m m M A XIM UM inches / m m .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 18.75 A 55 V 730 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.24 °C/W B C D E F G H I J K L M N P CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG ηC POUT IC = 50 mA IC = 50 mA IE = 15 mA VCE = 50 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.0 30 UNITS V V V mA --dB % W IC = 5.0 A 10 6.3 40 270 6.8 45 300 --- VCC = 50 V PIN = 63 W f = 1235 to 1365 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1