ASAT35L

ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 3.5 A 50 V 55 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 2.6 C/W O O O O 1 = Collector 2 & 4 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG ηC ZCL ZIN ZCL ZIN IC = 20 mA IC = 20 mA IE = 10 mA VCE = 28 V VCE = 5 V VCE = 28 V VCE = 28 V VCE = 28 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 50 3.5 5.0 UNITS V V V mA --dB % Ohms Ohms IC = 2.0 A POUT = 35 W POUT = 35 W POUT = 35 W f = 1500 - 1600 MHz f = 1500 MHz f = 1600 MHz 20 8.0 45 9.0 50 3.0 + j0.5 4.0 + j15.0 1.8 + j1.0 5.5 + j16.2 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1