BLW86

BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System E C Ø.125 NOM. FULL R J .125 B C D F E E MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.9 °C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO ICES hFE Cob PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V PIN = 7.0 W IC = 500 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 1.0 10 5.0 200 65 7.6 60 UNITS V V V V mA mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1