MLN1030SL_07

MLN1030SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SL is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L PILL A FEATURES: • Class A Operation • PG = 9.0 dB at 1.0 W/1.0 GHz • Omnigold™ Metalization System S D ØB G S MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.250 A D ØC 40 V 28 V 3.5 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 20 ° C/W O DIM A B C D E F .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 MINIMUM inches / mm E F MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 ORDER CODE: ASI10624 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 24 V VCE = 5.0 V VCB = 28 V VCE = 20 V POUT = 1.0 W ICQ = 150 mA IC = 100 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 40 28 3.5 0.5 20 120 5.0 9.0 UNITS V V V mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1