MSC80614

MSC80614 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC80614 is designed for Class C, DME/TACAN Applications up to 1150 MHz. • OmnigoldTM Metalization system • Input Matching network • Emitter Ballasting 2 3 1 FEATURES INCLUDE: MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 250 mA 37 V 10 W @ TC ≤ 100 °C -65 °C to +200 °C -65 °C to +150 °C 10 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG PIN ηC IC = 10 mA TC = 25 °C TEST CONDITIONS IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCC = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 30 9.0 0.25 35 300 UNITS V V mA --dB W % POUT = 2.0 W PULSE WIDTH = 10 µS A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1