VHB10-28F_07

VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: B • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 1.0 A 65 V 35 V 4.0 V 13.0 W @ TC = 25 ° C -65 °C to +200 °C -65 °C to +150°C 13.5 °C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10721 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V PIN = 1.0 W POUT = 10 W IC = 200 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 5.0 200 15 10 60 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1