VMB40-12F_07

VMB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 10 dB @ 40W/175MHz • Omnigold™ Metalization System C D F E G HI MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 5.0 A 36 V 18 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10743 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 5.0 UNITS V V V V mA --pF dB VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 40 W IC = 5.0 A f = 1.0 MHz f = 88 MHz 10 60 20 200 165 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1