AT24HC02BN-SP25-B

1. Features • Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Compared to the AT24C02B/04B • Medium-voltage and Standard-voltage Operation – 2.5 (VCC = 2.5V to 5.5V) Automotive Temperature Range –40°C to 125°C Internally Organized 256 x 8 (2K), 512 x 8 (4k) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 400 kHz (2.5V) Compatibility Write Protect Pin for Hardware Data Protection 8-byte Page (2k), 16-byte Page (4k) Write Modes Partial Page Writes are Allowed Self-timed Write Cycle (5 ms max) High-reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years • 8-lead JEDEC SOIC and 8-lead TSSOP Packages • • • • • • • • • • • Two-wire Automotive Temperature Serial EEPROM 2K (256 x 8) 4k (512 x 8) 2. Description The AT24HC02B/04B provides 2048/4096 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 256/512 words of 8 bits each. The device is optimized for use in many automotive applications where low-power and low-voltage operation are essential. The AT24HC02B/04B is available in space-saving 8-lead JEDEC SOIC and 8-lead TSSOP packages and is accessed via a two-wire serial interface. In addition, the entire family is available in 2.5V (2.5V to 5.5V) versions. AT24HC02B AT24HC04B 8-lead SOIC Table 2-1. Pin Name A0 − A2 SDA SCL WP NC Pin Configurations Function Address Inputs Serial Data Serial Clock Input Write Protect No Connect A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA 8-lead TSSOP A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA 5192C–SEEPR–01/09 Absolute Maximum Ratings Operating Temperature ......................................−55°C to +125°C Storage Temperature .........................................−65°C to +150°C Voltage on Any Pin with Respect to Ground ........................................ −1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V DC Output Current........................................................ 5.0 mA *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Figure 2-1. Block Diagram 3. Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open-collector devices. DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs that are hard wired for the AT24HC02B. As many as eight 2K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). 2 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B The AT24HC04B uses the A2 and A1 inputs for hardware addressing, and a total of four 4K devices may be addressed on a single bus system. The A0 pin is a no-connect. WRITE PROTECT (WP): The AT24HC02B/04B have a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to VCC, the write protection feature is enabled and operates as shown in the following table. Table 3-1. WP Pin Status At VCC At GND Write Protect Part of the Array Protected AT24HC02B/04B Upper Half (1K/2K) Array Normal Read/Write Operations 3 5192C–SEEPR–01/09 4. Memory Organization AT24HC02B, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address for random word addressing. AT24HC04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each. Random word addressing requires a 9-bit data word address. Table 4-1. Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +2.5V Symbol CI/O CIN Note: Test Condition Input/Output Capacitance (SDA) Input Capacitance (A0, A1, A2, SCL) 1. This parameter is characterized and is not 100% tested. Max 8 6 Units pF pF Conditions VI/O = 0V VIN = 0V Table 4-2. DC Characteristics Applicable over recommended operating range from: TA = −40°C to +125°C, VCC = +2.5V to +5.5V (unless otherwise noted) Symbol VCC1 ICC ICC ISB1 ISB2 ILI ILO VIL VIH VOL Note: Parameter Supply Voltage Supply Current VCC = 5.0V Supply Current VCC = 5.0V Standby Current VCC = 2.5V Standby Current VCC = 5.0V Input Leakage Current Output Leakage Current Input Low Level(1) Input High Level (1) Test Condition Min 2.5 Typ Max 5.5 Units V mA mA µA µA µA µA V V V Read at 100 kHz Write at 100 kHz VIN = VCC or VSS VIN = VCC or VSS VIN = VCC or VSS VOUT = VCC or VSS −0.6 VCC x 0.7 IOL = 3.0 mA 0.4 2.0 1.6 8.0 0.10 0.05 1.0 3.0 4.0 18.0 3.0 3.0 VCC x 0.3 VCC + 0.5 0.4 Output Low Level VCC = 2.5V 1. VIL min and VIH max are reference only and are not tested. 4 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B Table 4-3. AC Characteristics Applicable over recommended operating range from TA = −40°C to +125°C, VCC = +2.5V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) Symbol fSCL tLOW tHIGH tI tAA tBUF tHD.STA tSU.STA tHD.DAT tSU.DAT tR tF tSU.STO tDH tWR Endurance(2) Notes: Parameter Clock Frequency, SCL Clock Pulse Width Low Clock Pulse Width High Noise Suppression Time (1) Min Max 400 Units kHz µs µs 1.2 0.6 50 0.1 1.2 0.6 0.6 0 100 300 300 0.6 50 5 1M 0.9 ns µs µs µs µs µs ns ns ns µs ns ms Write Cycles Clock Low to Data Out Valid Time the bus must be free before a new transmission can start(2) Start Hold Time Start Set-up Time Data In Hold Time Data In Set-up Time Inputs Rise Time (2) Inputs Fall Time(2) Stop Set-up Time Data Out Hold Time Write Cycle Time 5.0V, 25°C, Page Mode 1. This parameter is characterized and is not 100% tested (TA = 25°C). 2. This parameter is ensured by characterization only. 5 5192C–SEEPR–01/09 5. Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see to Figure 7-2 on page 7). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see to Figure 7-3 on page 8). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 7-3 on page 8). ACKNOWLEDGE: A ll addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a “0” to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The AT24HC02B/04B features a low-power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations. SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any two-wire part can be protocol reset by following these steps (a) Create a start bit condition. (b) Clock nine cycles. (c) Create another start bit followed by stop bit condition as shown below. The device is ready for next communication after above steps have been completed. Figure 5-1. Software Reset Protocol Start Bit Dummy Clock Cycles Start Bit Stop Bit SCL 1 2 3 8 9 SDA 6 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B 6. Bus Timing Figure 6-1. SCL: Serial Clock, SDA: Serial Data I/O 7. Write Cycle Timing Figure 7-1. SCL: Serial Clock, SDA: Serial Data I/O SCL SDA 8th BIT WORDn ACK twr STOP CONDITION Note: (1) START CONDITION 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. Figure 7-2. Data Validity 7 5192C–SEEPR–01/09 Figure 7-3. Start and Stop Definition Figure 7-4. Output Acknowledge 8. Device Addressing The 2Kand 4K EEPROM devices all require an 8-bit device address word following a start condition to enable the chip for a read or write operation (see to Figure 10-1 on page 10). The device address word consists of a mandatory “1”, “0” sequence for the first four most significant bits as shown. This is common to all the Serial EEPROM devices. The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3 bits must compare to their corresponding hardwired input pins. The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory address bit (See Figure 10-1). The two device address bits must compare to their corresponding hardwired input pins. The A0 pin is no-connect. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made, the chip will return to a standby state. 8 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B 9. Write Operations BYTE WRITE: A w rite operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a “0” and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (see Figure 10-2 on page 10). PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K EEPROM device is capable of 16-byte page writes. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to seven (2K) or sixtenn (4K) more data words. The EEPROM will respond with a “0” after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 10-3 on page 11). The data word address lower three bits (2K) or four (4K) are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K) data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. ACKNOWLEDGE POLLING: O nce the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a “0”, allowing the read or write sequence to continue. 9 5192C–SEEPR–01/09 10. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to “1”. There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: T he internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. The address “roll over” during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to “1” is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input “0” but does generate a following stop condition (see Figure 10-5 on page 11). RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a “0” but does generate a following stop condition (see Figure 10-4 on page 11). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a “0” but does generate a following stop condition (see Figure 10-6 on page 11). Figure 10-1. Device Address 2K 10 MSB 10 MSB 1 0 A A A R/W LSB P R/W LSB 4K 1 0 A A Figure 10-2. Byte Write 10 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B Figure 10-3. Page Write Figure 10-4. Current Address Read Figure 10-5. Random Read Figure 10-6. Sequential Read 11 5192C–SEEPR–01/09 11. AT24HC02B Ordering Information Ordering Code AT24HC02BN-SP25-B(1) AT24HC02BN-SP25-T(2) AT24HC02B-TP25-B(1) AT24HC02B-TP25-T(2) Notes: 1. “-B” denotes bulk. 2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel. Package 8S1 8S1 8A2 8A2 Operation Range Lead-free/Halogen-free/NiPdAu Lead Finish/Automotive Temperature (−40°C to 125°C) Package Type 8S1 8A2 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options −2.5 Low-voltage (2.5V to 5.5V) 12 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B 12. AT24HC04B Ordering Information Ordering Code AT24HC04BN-SP25-B(1) AT24HC04BN-SP25-T(2) AT24HC04B-TP25-B(1) AT24HC04B-TP25-T(2) Notes: 1. “-B” denotes bulk. 2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel. Package 8S1 8S1 8A2 8A2 Operation Range Lead-free/Halogen-free/NiPdAu Lead Finish/Automotive Temperature (−40°C to 125°C) Package Type 8S1 8A2 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options −2.5 Low-voltage (2.5V to 5.5V) 13 5192C–SEEPR–01/09 13. Packaging Information 13.1 8A2 - TSSOP 3 21 Pin 1 indicator this corner E1 E L1 N L Top View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN 2.90 NOM 3.00 6.40 BSC 4.30 – 0.80 0.19 4.40 – 1.00 – 0.65 BSC 0.45 0.60 1.00 REF 0.75 4.50 1.20 1.05 0.30 4 3, 5 MAX 3.10 NOTE 2, 5 b A D E E1 A e D A2 A2 b e Side View L L1 Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A2 REV. B 14 AT24HC02B/04B 5192C–SEEPR–01/09 AT24HC02B/04B 13.2 8S1 – JEDEC SOIC C 1 E E1 N ∅ L Top View End View e B A SYMBOL COMMON DIMENSIONS (Unit of Measure = mm) MIN 1.35 0.10 0.31 0.17 4.80 3.81 5.79 NOM – – – – – – – 1.27 BSC 0.40 0˚ – – 1.27 8˚ MAX 1.75 0.25 0.51 0.25 5.00 3.99 6.20 NOTE A1 A A1 b C D D E1 E Side View e L ∅ Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. 10/7/03 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. B R 15 5192C–SEEPR–01/09 14. Revision History Doc. Rev. 5192C 5192B 5192A Date 1/2009 3/2008 1/2007 Comments Removed Preliminary status. Added information for AT24HC04B. Updated to new template. Initial document release. 16 AT24HC02B/04B 5192C–SEEPR–01/09 Headquarters Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 International Atmel Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Product Contact Web Site www.atmel.com Technical Support s_eeprom@atmel.com Sales Contact www.atmel.com/contacts Literature Requests www.atmel.com/literature Disclaimer: T he information in this document is provided in connection with Atmel products. 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