AT49BV320DT

Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 10 mA Active – 15 µA Standby VPP Pin for Write Protection and Accelerated Program Operation WP Pin for Sector Protection RESET Input for Device Initialization Flexible Sector Protection TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging • • • • • • • • • • • • • • 32-megabit (2M x 16) 3-volt Only Flash Memory AT49BV320D AT49BV320DT 1. Description The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Flexible Sector Protection” on page 6). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 10.0V, the program (Dual-word Program command) operation is accelerated. 3581C–FLASH–11/05 2. Pin Configurations Pin Name A0 - A20 CE OE WE RESET VPP I/O0 - I/O15 NC VCCQ WP Function Addresses Chip Enable Output Enable Write Enable Reset Write Protection Data Inputs/Outputs No Connect Output Power Supply Write Protect 2.1 TSOP Top View (Type 1) A15 A14 A13 A12 A11 A10 A9 A8 NC A20 WE RESET VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 2.2 CBGA Top View (Ball Down) 1 A A13 A11 A10 A12 I/O14 A8 WE A9 I/O5 I/O6 I/O13 I/O11 I/O12 I/O4 VPP RST WP A18 A20 I/O2 I/O3 VCC A19 A17 A6 I/O8 I/O9 I/O10 A7 A5 A3 CE I/O0 I/O1 A4 A2 A1 A0 GND OE 2 3 4 5 6 7 8 B A14 C A15 D A16 E VCCQ I/O15 F GND I/O7 2 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 3. Block Diagram I/O0 - I/O15 OUTPUT BUFFER INPUT BUFFER OUTPUT MULTIPLEXER A0 - A20 INPUT BUFFER DATA REGISTER IDENTIFIER REGISTER STATUS REGISTER COMMAND REGISTER ADDRESS LATCH DATA COMPARATOR CE WE OE RESET WP WRITE STATE MACHINE Y-DECODER Y-GATING PROGRAM/ERASE VOLTAGE SWITCH VPP VCC GND X-DECODER MAIN MEMORY 4. Device Operation 4.1 Command Sequences When the device is first powered on, it will be in the read mode. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition Table” on page 15 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address and data are latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. 4.2 Read When the AT49BV320D(T) is in the read mode, with CE and OE low and WE high, the data stored at the memory location determined by the address pins are asserted on the outputs. The 3 3581C–FLASH–11/05 outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. 4.3 Reset A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET pin, the device returns to the read mode, depending upon the state of the control inputs. 4.4 Erase Before a word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The individual sectors can be erased by using the Sector Erase command. 4.4.1 Sector Erase The device is organized into 71 sectors (SA0 - SA70) that can be individually erased. The Sector Erase command is a two-bus cycle operation. The sector address and the D0H Data Input command are latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the second cycle provided the given sector has not been protected. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. An attempt to erase a sector that has been protected will result in the operation terminating immediately. 4.5 Word Programming Once a memory sector is erased, it is programmed (to a logical “0”) on a word-by-word basis. Programming is accomplished via the Internal Device command register and is a two-bus cycle operation. The device will automatically generate the required internal program pulses. Any commands, except Read Status Register, Program Suspend and Program Resume, written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. If the program status bit is a “1”, the device was not able to verify that the program operation was performed successfully. The status register indicates the programming status. While the program sequence executes, status bit I/O7 is “0”. 4.6 VPP Pin The circuitry of the AT49BV320D(T) is designed so that the device cannot be programmed or erased if the VPP voltage is less that 0.4V. When VPP is at 1.65V or above, normal program and erase operations can be performed. The VPP pin cannot be left floating. 4 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 4.7 Read Status Register The status register indicates the status of device operations and the success/failure of that operation. The Read Status Register command causes subsequent reads to output data from the status register until another command is issued. To return to reading from the memory, issue a Read command. The status register bits are output on I/O7 - I/O0. The upper byte, I/O15 - I/O8, outputs 00H when a Read Status Register command is issued. The contents of the status register [SR7:SR0] are latched on the falling edge of OE or CE (whichever occurs last), which prevents possible bus errors that might occur if status register contents change while being read. CE or OE must be toggled with each subsequent status read, or the status register will not indicate completion of a Program or Erase operation. When the Write State Machine (WSM) is active, SR7 will indicate the status of the WSM; the remaining bits in the status register indicate whether the WSM was successful in performing the preferred operation (see Table 4-1). Table 4-1. WSMS 7 Status Register Bit Definition ESS 6 ES 5 PS 4 VPPS 3 PSS 2 Notes SLS 1 R 0 SR7 WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR6 = ERASE SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase In Progress/Completed SR5 = ERASE STATUS (ES) 1 = Error in Sector Erase 0 = Successful Sector Erase SR4 = PROGRAM STATUS (PS) 1 = Error in Programming 0 = Successful Programming SR3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK SR2 = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed SR1 = SECTOR LOCK STATUS (SLS) 1 = Prog/Erase attempted on a locked sector; Operation aborted. 0 = No operation to locked sectors SR0 = RESERVED FOR FUTURE ENHANCEMENTS (R) Note: Check Write State Machine bit first to determine Word Program or Sector Erase completion, before checking program or erase status bits. When Erase Suspend is issued, WSM halts execution and sets both WSMS and ESS bits to “1” – ESS bit remains set to “1” until an Erase Resume command is issued. When this bit is set to “1”, WSM has applied the max number of erase pulses to the sector and is still unable to verify successful sector erasure. When this bit is set to “1”, WSM has attempted but failed to program a word The VPP status bit does not provide continuous indication of VPP level. The WSM interrogates VPP level only after the Program or Erase command sequences have been entered and informs the system if VPP has not been switched on. The VPP is also checked before the operation is verified by the WSM. When Program Suspend is issued, WSM halts execution and sets both WSMS and PSS bits to “1”. PSS bit remains set to “1” until a Program Resume command is issued. If a Program or Erase operation is attempted to one of the locked sectors, this bit is set by the WSM. The operation specified is aborted and the device is returned to read status mode. This bit is reserved for future use and should be masked out when polling the status register. 1. A Command Sequence Error is indicated when SR1, SR3, SR4 and SR5 are set. 5 3581C–FLASH–11/05 4.7.1 Clear Status Register The WSM can set status register bits 1 through 7 and can clear bits 2, 6 and 7; but, the WSM cannot clear status register bits 1, 3, 4 or 5. Because bits 1, 3, 4 and 5 indicate various error conditions, these bits can be cleared only through the Clear Status Register command. By allowing the system software to control the resetting of these bits, several operations may be performed (such as cumulatively programming several addresses or erasing multiple sectors in sequence) before reading the status register to determine if an error occurred during those operations. The status register should be cleared before beginning another operation. The Read command must be issued before data can be read from the memory array. The status register can also be cleared by resetting the device. 4.8 Flexible Sector Protection The AT49BV320D(T) offers two sector protection modes, the Softlock and the Hardlock. The Softlock mode is optimized as sector protection for sectors whose content changes frequently. The Hardlock protection mode is recommended for sectors whose content changes infrequently. Once either of these two modes is enabled, the contents of the selected sector is read-only and cannot be erased or programmed. Each sector can be independently programmed for either the Softlock or Hardlock sector protection mode. At power-up and reset, all sectors have their Softlock protection mode enabled. 4.8.1 Softlock and Unlock The Softlock protection mode can be disabled by issuing a two-bus cycle Unlock command to the selected sector. Once a sector is unlocked, its contents can be erased or programmed. To enable the Softlock protection mode, a two-bus cycle Softlock command must be issued to the selected sector. Hardlock and Write Protect The Hardlock sector protection mode operates in conjunction with the Write Protect (WP) pin. The Hardlock sector protection mode can be enabled by issuing a two-bus cycle Hardlock Software command to the selected sector. The state of the Write Protect pin affects whether the Hardlock protection mode can be overridden. • When the WP pin is low and the Hardlock protection mode is enabled, the sector cannot be unlocked and the contents of the sector is read-only. • When the WP pin is high, the Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command. To disable the Hardlock sector protection mode, the chip must be either reset or power cycled. 4.8.2 6 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) Table 4-2. Hardlock and Softlock Protection Configurations in Conjunction with WP Hardlock 0 0 1 0 0 1 Softlock 0 1 1 0 1 0 Erase/ Prog Allowed? Yes No No Yes No Yes VPP VCC/5V VCC/5V VCC/5V VCC/5V VCC/5V VCC/5V WP 0 0 0 1 1 1 Comments No sector is locked Sector is Softlocked. The Unlock command can unlock the sector. Hardlock protection mode is enabled. The sector cannot be unlocked. No sector is locked. Sector is Softlocked. The Unlock command can unlock the sector. Hardlock protection mode is overridden and the sector is not locked. Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command. Erase and Program Operations cannot be performed. VCC/5V 1 1 1 No VIL x x x No Figure 4-1. Sector Locking State Diagram UNLOCKED 60h/ D0h [000] 60 h/2 Fh LOCKED 60h/01h [001] WP = VIL = 0 60h/ 2Fh Power-Up/Reset Default [011] Hardlocked 60h/D0h [110] 60h/ 01h [111] Hardlocked is disabled by WP = VIH WP = VIH = 1 60h/ D0h [100] 60h/ 2Fh 60h/ 2Fh Power-Up/Reset Default 60h/ 01h [101] 60h/D0h = Unlock Command 60h/01h = Softlock Command 60h/2Fh = Hardlock Command Note: 1. The notation [X, Y, Z] denotes the locking state of a sector. The current locking state of a sector is defined by the state of WP and the two bits of the sector-lock status D[1:0]. 7 3581C–FLASH–11/05 4.8.3 Sector Protection Detection A software method is available to determine if the sector protection Softlock or Hardlock features are enabled. When the device is in the software product identification mode, a read from the I/O0 and I/O1 at address location 00002H within a sector will show if the sector is unlocked, softlocked, or hardlocked. Table 4-3. I/O1 0 0 1 1 Sector Protection Status I/O0 0 1 0 1 Sector Protection Status Sector Not Locked Softlock Enabled Hardlock Enabled Both Hardlock and Softlock Enabled 4.9 Erase Suspend/Erase Resume The Erase Suspend command allows the system to interrupt a sector erase operation and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The only valid commands while erase is suspended are Read Status Register, Product ID Entry, CFI Query, Program, Program Resume, Erase Resume, Sector Softlock/Hardlock, Sector Unlock. 4.10 Program Suspend/Program Resume The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. After the Program Suspend command is given, the device requires a maximum of 20 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same and the command sequence for the erase resume and program resume are the same. The only other valid commands while program is suspended are Read Status Register, Product ID Entry, CFI Query and Program Resume. 4.11 Product Identification The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by a software operation. For details, see “Operating Modes” on page 21. 4.12 128-bit Protection Register The AT49BV320D(T) contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64-bit sectors. The two sectors are designated as sector A and sector B. The data in sector A is non-changeable and is programmed at the factory with a unique number. The data in sector B is programmed by the user and can be locked out such that data in the sector cannot be reprogrammed. To program sector 8 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) B in the protection register, the two-bus cycle Program Protection Register command must be used as shown in the “Command Definition Table” on page 15. To lock out sector B, the two-bus cycle Lock Protection Register command must be used as shown in the “Command Definition Table” . Data bit D1 must be zero during the second bus cycle. All other data bits during the second bus cycle are don’t cares. To determine whether sector B is locked out, use the status of sector B protection command. If data bit D1 is zero, sector B is locked. If data bit D1 is one, sector B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 16 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether sector B is protected or not, or reading the protection register, the Read command must be given to return to the read mode. 4.13 Common Flash Interface (CFI) CFI is a published, standardized data structure that may be read from a flash device. CFI allows system software to query the installed device to determine the configurations, various electrical and timing parameters and functions supported by the device. CFI is used to allow the system to learn how to interface to the flash device most optimally. The two primary benefits of using CFI are ease of upgrading and second source availability. The command to enter the CFI Query mode is a one-bus cycle command which requires writing data 98h to any address. The CFI Query command can be written when the device is ready to read data or can also be written when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI data at the addresses given in “Common Flash Interface Definition Table” on page 27. To return to the read mode, issue the Read command. 4.14 Hardware Data Protection The Hardware Data Protection feature protects against inadvertent programs to the AT49BV320D(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Program inhibit: VPP is less than VILPP. 4.15 Input Levels While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE a nd WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCCQ + 0.6V. 4.16 Output Levels For the AT49BV320D(T), output high levels (VOH) are equal to VCCQ - 0.1V (not VCC). For 2.65V - 3.6V output levels, VCCQ must be tied to VCC. 9 3581C–FLASH–11/05 5. Word Program Flowchart Start 6. Word Program Procedure Bus Operation Write Command Program Setup Data None Comments Data = 40 Addr = Any Address Data = Data to program Addr = Location to program Status register data: Toggle CE or OE to update status register Check SR7 1 = WSM Ready 0 = WSM Busy Write 40, Any Address (Setup) Write Write Data, Word Address Read-Status Register No (Confirm) Read Program Suspend Loop 0 Ye s Idle None SR7 = 1 Suspend? Full Status Check (If Desired) Repeat for subsequent Word Program operations. Full status register check can be done after each program, or after a sequence of program operations. Write FF after the last operation to set to the Read state. Program Complete 7. Full Status Check Flowchart Read Status Register 8. Full Status Check Procedure Bus Operation Idle Command None None Comments Check SR3: 1 = VPP Error Check SR4: 1 = Data Program Error Check SR1: 1 = Sector locked; operation aborted SR3 = 0 1 VP P Range Error Idle Program Error SR4 = 0 1 Idle None SR1 = 0 1 Device Protect Error SR3 MUST be cleared before the Write State Machine allows further program attempts. If an error is detected, clear the status register before continuing operations – only the Clear Status Register command clears the status register error bits. Program Successful 10 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 9. Program Suspend/Resume Flowchart Start 10. Program Suspend/Resume Procedure Bus Operation Write Command Program Suspend Read Status Comments Data = B0 Addr = Any address Data = 70 Addr = Any address Status register data: Toggle CE or OE to update status register Addr = Any address Check SR7 1 = WSM Ready 0 = WSM Busy Check SR2 1 = Program suspended 0 = Program completed Data = FF Addr = Any address Read data from any word in the memory Data = D0 Addr = Any address Write B0 Any Address Write 70 Any Address Read Status Register (Program Suspend) Write (Read Status) Read None SR7 = 1 0 Idle None Idle SR2 = 1 0 None Program Completed Write (Read Array) Read Array None Program Resume Write FF Read Read Data Write FF (Read Array) Write Done Reading Yes No Read Data Write D0 Any Address (Program Resume) Program Resumed 11 3581C–FLASH–11/05 11. Sector Erase Flowchart Start 12. Sector Erase Procedure Bus Operation Command Sector Erase Setup Erase Confirm None Comments Data = 20 Addr = Any address Data = D0 Addr = Sector to be erased (SA) Status register data: Toggle CE or OE to update status register data Check SR7 1 = WSM Ready 0 = WSM Busy Write 20, Any Address (Sector Erase) Write Write D0, (Erase Confirm) Sector Address Read Status Register No Write Suspend Erase Loop Read SR7 = 1 0 Suspend Erase Ye s Idle None Full Erase Status Check (If Desired) Sector Erase Complete Repeat for subsequent sector erasures. Full status register check can be done after each sector erase, or after a sequence of sector erasures. Write FF after the last operation to enter read mode. 13. Full Erase Status Check Flowchart Read Status Register 1 14. Full Erase Status Check Procedure Bus Operation Command None Comments Check SR3: 1 = VPP Range Error Check SR4, SR5: Both 1 = Command Sequence Error Check SR5: 1 = Sector Erase Error Check SR1: 1 = Attempted erase of locked sector; erase aborted. SR3 = 0 SR4, SR5 = VP P Range Error Command Sequence Error Idle 1,1 Idle None 0 SR5 = 0 1 Sector Erase Error Idle None SR1 = 0 1 Sector Locked Error Idle None Sector Erase Successful SR1, SR3 must be cleared before the Write State Machine allows further erase attempts. Only the Clear Status Register command clears SR1, SR3, SR4, SR5. If an error is detected, clear the status register before attempting an erase retry or other error recovery. 12 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 15. Erase Suspend/Resume Flowchart Start 16. Erase Suspend/Resume Procedure Bus Operation Command Erase Suspend Read Status Comments Data = B0 Addr = Any address Data = 70 Addr = Any address Status register data: Toggle CE or OE to update status register Addr = Any address Check SR7 1 = WSM Ready 0 = WSM Busy Check SR6 1 = Erase suspended 0 = Erase completed Data = FF or 40 Addr = Any address Read or program data from/to sector other than the one being erased Data = D0 Addr = Any address Write B0, Any Address (Erase Suspend) Write Write Write 70, Any Address Read Status Register (Read Status) Read 0 None SR7 = 1 Idle 0 None SR6 = 1 Erase Completed Idle Write FF None (Read Array) Read Data Write Read or Write Write Read or Program None Program Resume Done Reading 1 (Erase Resume) 0 Write D0, Any Address Erase Resumed Write FF (Read Array) Read Array Data 13 3581C–FLASH–11/05 17. Protection Register Programming Flowchart Start 18. Protection Register Programming Procedure Bus Operation Command Program PR Setup Protection Program None Comments Data = C0 Addr = Any address Data = Data to Program Addr = Location to Program Status register data: Toggle CE or OE to update status register data Check SR7 1 = WSM Ready 0 = WSM Busy Write C0, Any Address (Program-Setup) Write Write Write PR Address Data (Confirm Data) Read-Status Register Read SR7 = 1 0 Idle None Full-Status Check (If Desired) Program Complete Program Protection Register operation addresses must be within the protection register address space. Addresses outside this space will return an error. Repeat for subsequent programming operations. Full status register check can be done after each program, or after a sequence of program operations. Write FF after the last operation to return to the Read mode. 19. Full Status Check Flowchart Read Status Register Data 20. Full Status Check Procedure Bus Operation Command None None Comments Check SR1, SR3, SR4: 0,1,1 = VPP Range Error Check SR1, SR3, SR4: 0,0,1 = Programming Error Check SR1, SR3, SR4: 1, 0,1 = Sector locked; operation aborted SR3, SR4 = 0 1 VP P Range Error Idle Idle SR3, SR4 = 1 Program Error Idle 0 1 None SR3, SR4 = 0 Register Locked; Program Aborted Program Successful SR3 must be cleared before the Write State Machine allows further program attempts. Only the Clear Status Register command clears SR1, SR3, SR4. If an error is detected, clear the status register before attempting a program retry or other error recovery. 14 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 21. Command Definition Table Bus Cycles 1 2 2 3 1 1 1 2 2 2 2 1 2 2 2 1 1st Bus Cycle Addr XX XX XX XX XX XX XX XX XX XX XX XX XX XX XX XX Data FF 20 40/10 E0 B0 D0 90 60 60 60 70 50 C0 C0 90 98 Addr(5) 80 80 DIN FFFD DOUT(6) SA(2) SA(2) SA (2) 2nd Bus Cycle Addr Data 3rd Bus Cycle Addr Data Command Sequence Read Sector Erase/Confirm Word Program Dual-word Program(3) Erase/Program Suspend Erase/Program Resume Product ID Entry Sector Softlock Sector Hardlock Sector Unlock Read Status Register Clear Status Register Program Protection Register Lock Protection Register – Sector B Status of Sector B Protection CFI Query Notes: SA(2) Addr Addr0 D0 DIN DIN0 Addr1 DIN1 01 2F D0 DOUT(4) XX 1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). I/O15 - I/O8 are don’t care. The ADDRESS FORMAT shown for each bus cycle is as follows: A7 - A0 (Hex). Address A20 through A8 are don’t care. 2. SA = sector address. Any word address within a sector can be used to designate the sector address (see pages 17 - 20 for details). 3. This fast programming option enables the user to program two words in parallel only when VPP = 9.5V. The addresses, Addr0 and Addr1, of the two words, DIN0 and DIN1, must only differ in address A0. This command should be used during manufacturing purposes only. 4. The status register bits are output on I/O7 - I/O0. 5. Any addresses within the user programmable protection register region. Address locations are shown on “Protection Register Addressing Table” on page 16. 6. If data bit D1 is “0”, sector B is locked. If data bit D1 is “1”, sector B can be reprogrammed. 22. Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on VPP with Respect to Ground ...................................-0.6V to +10.0V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 15 3581C–FLASH–11/05 23. Protection Register Addressing Table Address 81 82 83 84 85 86 87 88 Note: Use Factory Factory Factory Factory User User User User Sector A A A A B B B B A7 1 1 1 1 1 1 1 1 A6 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 A3 0 0 0 0 0 0 0 1 A2 0 0 0 1 1 1 1 0 A1 0 1 1 0 0 1 1 0 A0 1 0 1 0 1 0 1 0 All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A20 - A8 = 0. 16 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 24. AT49BV320D Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 Size (Bytes/Words) 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K Address Range (A20 - A0) 00000 - 00FFF 01000 - 01FFF 02000 - 02FFF 03000 - 03FFF 04000 - 04FFF 05000 - 05FFF 06000 - 06FFF 07000 - 07FFF 08000 - 0FFFF 10000 - 17FFF 18000 - 1FFFF 20000 - 27FFF 28000 - 2FFFF 30000 - 37FFF 38000 - 3FFFF 40000 - 47FFF 48000 - 4FFFF 50000 - 57FFF 58000 - 5FFFF 60000 - 67FFF 68000 - 6FFFF 70000 - 77FFF 78000 - 7FFFF 80000 - 87FFF 88000 - 8FFFF 90000 - 97FFF 98000 - 9FFFF A0000 - A7FFF A8000 - AFFFF B0000 - B7FFF B8000 - BFFFF C0000 - C7FFF C8000 - CFFFF D0000 - D7FFF D8000 - DFFFF E0000 - E7FFF E8000 - EFFFF F0000 - F7FFF 17 3581C–FLASH–11/05 24. AT49BV320D Sector Address Table (Continued) Sector SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Size (Bytes/Words) 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K Address Range (A20 - A0) F8000 - FFFFF 100000 - 107FFF 108000 - 10FFFF 110000 - 117FFF 118000 - 11FFFF 120000 - 127FFF 128000 - 12FFFF 130000 - 137FFF 138000 - 13FFFF 140000 - 147FFF 148000 - 14FFFF 150000 - 157FFF 158000 - 15FFFF 160000 - 167FFF 168000 - 16FFFF 170000 - 177FFF 178000 - 17FFFF 180000 - 187FFF 188000 - 18FFFF 190000 - 197FFF 198000 - 19FFFF 1A0000 - 1A7FFF 1A8000 - 1AFFFF 1B0000 - 1B7FFF 1B8000 - 1BFFFF 1C0000 - 1C7FFF 1C8000 - 1CFFFF 1D0000 - 1D7FFF 1D8000 - 1DFFFF 1E0000 - 1E7FFF 1E8000 - 1EFFFF 1F0000 -1F7FFF 1F8000 - 1FFFFF 18 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 25. AT49BV320DT – Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 Size (Bytes/Words) 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K Address Range (A20 - A0) 00000 - 07FFF 08000 - 0FFFF 10000 - 17FFF 18000 - 1FFFF 20000 - 27FFF 28000 - 2FFFF 30000 - 37FFF 38000 - 3FFFF 40000 - 47FFF 48000 - 4FFFF 50000 - 57FFF 58000 - 5FFFF 60000 - 67FFF 68000 - 6FFFF 70000 - 77FFF 78000 - 7FFFF 80000 - 87FFF 88000 - 8FFFF 90000 - 97FFF 98000 - 9FFFF A0000 - A7FFF A8000 - AFFFF B0000 - B7FFF B8000 - BFFFF C0000 - C7FFF C8000 - CFFFF D0000 - D7FFF D8000 - DFFFF E0000 - E7FFF E8000 - EFFFF F0000 - F7FFF F8000 - FFFFF 100000 - 107FFF 108000 - 10FFFF 110000 - 117FFF 118000 - 11FFFF 120000 - 127FFF 128000 - 12FFFF SA35 SA36 SA37 19 3581C–FLASH–11/05 25. AT49BV320DT – Sector Address Table (Continued) Sector SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Size (Bytes/Words) 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K Address Range (A20 - A0) 130000 - 137FFF 138000 - 13FFFF 140000 - 147FFF 148000 - 14FFFF 150000 - 157FFF 158000 - 15FFFF 160000 - 167FFF 168000 - 16FFFF 170000 - 177FFF 178000 - 17FFFF 180000 - 187FFF 188000 - 18FFFF 190000 - 197FFF 198000 - 19FFFF 1A0000 - 1A7FFF 1A8000 - 1AFFFF 1B0000 - 1B7FFF 1B8000 - 1BFFFF 1C0000 - 1C7FFF 1C8000 - 1CFFFF 1D0000 - 1D7FFF 1D8000 - 1DFFFF 1E0000 - 1E7FFF 1E8000 - 1EFFFF 1F0000 - 1F7FFF 1F8000 - 1F8FFF 1F9000 - 1F9FFF 1FA000 - 1FAFFF 1FB000 - 1FBFFF 1FC000 - 1FCFFF 1FD000 - 1FDFFF 1FE000 - 1FEFFF 1FF000 - 1FFFFF 20 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 26. DC and AC Operating Range AT49BV320D(T)-70 Operating Temperature (Case) VCC Power Supply Ind. -40°C - 85°C 2.65V to 3.6V 27. Operating Modes Mode Read Program/Erase (3) CE VIL VIL VIH X OE VIL VIH X(2) X VIL X VIH X WE VIH VIL X VIH X X X X RESET VIH VIH VIH VIH VIH VIH VIH VIL VIH VPP(1) X (2) (4) Ai Ai Ai X I/O DOUT DIN High-Z VIHPP X X X Standby/Program Inhibit Program Inhibit X X VILPP(5) X X X A0 = VIL, A1 - A20 = VIL A0 = VIH, A1 - A20 = VIL High-Z High-Z Manufacturer Code(6) Device Code(6) Output Disable Reset Product Identification Software Notes: 1. 2. 3. 4. 5. 6. X X The VPP pin can be tied to VCC. For faster program operations, VPP can be set to 9.5V ± 0.5V. X can be VIL or VIH. Refer to AC programming waveforms on page 26. VIHPP (min) = 1.65V. VILPP (max) = 0.4V. Manufacturer Code: 001FH, Device Code: 90C5H – AT49BV320D; 90C4H – AT49BV320DT 21 3581C–FLASH–11/05 28. DC Characteristics Symbol ILI ILO ISB ICC (1) ICC1 IPP1 VIL VIH VOL VOH Note: Parameter Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Active Read Current VCC Programming Current VPP Input Load Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 1. In the erase mode, ICC is 25 mA. IOL = 2.1 mA IOH = -100 µA VCCQ - 0.1 VCCQ - 0.6 0.45 Condition VIN = 0V to VCC VI/O = 0V to VCC CE = VCC - 0.3V to VCC f = 5 MHz; IOUT = 0 mA 15 10 Min Typ Max 2 2 25 15 25 10 0.6 Units µA µA µA mA mA µA V V V V 22 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 29. Input Test Waveforms and Measurement Level 2.0V 1.5V 0.6V tR, tF < 5 ns 30. Output Test Load VCCQ 1.8 1.3 30 31. Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol CIN COUT Note: Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0V VOUT = 0V This parameter is characterized and is not 100% tested. 23 3581C–FLASH–11/05 32. AC Read Characteristics AT49BV320D(T)-70 Symbol tRC tACC tCE(1) tOE(2) tDF (3)(4) Parameter Read Cycle Time Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to Output Float Output Hold from OE, CE or Address, whichever occurred first RESET to Output Delay Min 70 Max Units ns 70 70 0 0 0 100 20 25 ns ns ns ns ns ns tOH tRO 33. AC Read Waveforms(1)(2)(3)(4) tRC ADDRESS ADDRESS VALID CE tCE OE tOE tDF tACC RESET HIGH Z tRO OUTPUT VALID tOH OUTPUT Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 24 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 34. AC Word Load Characteristics Symbol tAS, tOES tAH tCS tCH tWP tWPH tDS tDH, tOEH Parameter Address, OE Setup Time Address Hold Time Chip Select Setup Time Chip Select Hold Time Write Pulse Width (WE or CE) Write Pulse Width High Data Setup Time Data, OE Hold Time Min 20 0 0 0 25 15 25 0 Max Units ns ns ns ns ns ns ns ns 35. AC Word Load Waveforms 35.1 WE Controlled 35.2 CE Controlled 25 3581C–FLASH–11/05 36. Program Cycle Characteristics Symbol tBP tBPD tAS tAH tDS tDH tWP tWPH tWC tRP tSEC1 tSEC2 tES tPS Parameter Word Programming Time Word Programming Time in Dual Programming Mode Address Setup Time Address Hold Time Data Setup Time Data Hold Time Write Pulse Width Write Pulse Width High Write Cycle Time Reset Pulse Width Sector Erase Cycle Time (4K Word Sectors) Sector Erase Cycle Time (32K Word Sectors) Erase Suspend Time Program Suspend Time 20 0 25 0 25 15 70 500 0.1 0.5 2 6.0 15 10 Min Typ 10 5 Max 120 60 Units µs µs ns ns ns ns ns ns ns ns seconds seconds µs µs 37. Program Cycle Waveforms PROGRAM CYCLE OE CE tWP tBP WE tAS tWPH tDH tAH (1) A0 - A20 XX ADDRESS tWC tDS INPUT DATA DATA Note 3 38. Sector Erase Cycle Waveforms OE (2) CE tWP WE tAS tWPH tDH tAH (1) A0-A20 XX SA (4) tWC tDS tEC D0 DATA 20 WORD 0 WORD 1 Notes: 1. 2. 3. 4. Any address can be used to load the data. OE must be high only when WE and CE are both low. The data can be 40H or 10H. The address depends on what sector is to be erased. 26 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 39. Common Flash Interface Definition Table Address 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h AT49BV320DT 0051h 0052h 0059h 0003h 0000h 0041h 0000h 0000h 0000h 0000h 0000h 0027h 0036h 0090h 00A0h 0004h 0002h 0009h 0000h 0003h 0004h 0003h 0000h 0016h 0001h 0000h 0002h 0000h 0002h 003Eh 0000h 0000h 0001h 0007h 0000h 0020h 0000h AT49BV320D 0051h 0052h 0059h 0003h 0000h 0041h 0000h 0000h 0000h 0000h 0000h 0027h 0036h 0090h 00A0h 0004h 0002h 0009h 0000h 0004h 0004h 0004h 0000h 0016h 0001h 0000h 0002h 0000h 0002h 0007h 0000h 0020h 0000h 003Eh 0000h 0000h 0001h VCC min write/erase VCC max write/erase VPP min voltage VPP max voltage Typ word write – 10 µs Typ dual word program time – 5 µs Typ sector erase, 500 ms Typ chip erase, not supported Max word write/typ time Max dual word program time/typ time Max sector erase/typ sector erase Max chip erase/ typ chip erase Device size x16 device x16 device Maximum number of bytes in multiple byte write = 4 Maximum number of bytes in multiple byte write = 4 2 regions, x = 2 64K bytes, Y = 62 (Top); 8K bytes, Y = 7 (Bottom) 64K bytes, Y = 62 (Top); 8K bytes, Y = 7 (Bottom) 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom) 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom) 8K bytes, Y = 7 (Top); 64K bytes, Y = 62 (Bottom) 8K bytes, Y = 7 (Top); 64K bytes, Y = 62 (Bottom) 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom) 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom) Comments “Q” “R” “Y” 27 3581C–FLASH–11/05 39. Common Flash Interface Definition Table (Continued) Address AT49BV320DT AT49BV320D Comments VENDOR SPECIFIC EXTENDED QUERY 41h 42h 43h 44h 45h 0050h 0052h 0049h 0031h 0030h 0050h 0052h 0049h 0031h 0030h “P” “R” “I” Major version number, ASCII Minor version number, ASCII Bit 0 – chip erase supported, 0 – no, 1 – yes Bit 1 – erase suspend supported, 0 – no, 1 – yes Bit 2 – program suspend supported, 0 – no, 1 – yes Bit 3 – simultaneous operations supported, 0 – no, 1 – yes Bit 4 – burst mode read supported, 0 – no, 1 – yes Bit 5 – page mode read supported, 0 – no, 1 – yes Bit 6 – queued erase supported, 0 – no, 1 – yes Bit 7 – protection bits supported, 0 – no, 1 – yes Bit 8 – top (“0”) or bottom (“1”) boot sector device undefined bits are “0” Bit 0 – 4 word linear burst with wrap around, 0 – no, 1 – yes Bit 1 – 8 word linear burst with wrap around, 0 – no, 1 – yes Bit 2 – continuos burst, 0 - no, 1 - yes Undefined bits are “0” Bit 0 – 4 word page, 0 – no, 1 – yes Bit 1 – 8 word page, 0 – no, 1 – yes Undefined bits are “0” Location of protection register lock byte, the section’s first byte # of bytes in the factory prog section of prot register – 2*n # of bytes in the user prog section of prot register – 2*n 46h 0086h 0086h 47h 0000h 0001h 48h 0000h 0000h 49h 4Ah 4Bh 4Ch 0000h 0080h 0003h 0003h 0000h 0080h 0003h 0003h 28 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 40. Ordering Information 40.1 tACC (ns) Green Package (Pb/Halide-free) ICC (mA) Active Standby Ordering Code AT49BV320D-70CU AT49BV320D-70TU Package 47C1 48T 47C1 48T Operation Range 70 25 0.025 AT49BV320DT-70CU AT49BV320DT-70TU Industrial (-40° to 85°C) Package Type 47C1 48T 47-ball, Plastic Chip-Size Ball Grid Array Package (CBGA) 48-lead, Plastic Thin Small Outline Package (TSOP) 29 3581C–FLASH–11/05 41. Packaging Information 41.1 47C1 – CBGA E A1 BALL ID D TOP VIEW A 0.875 REF E1 e A1 SIDE VIEW A1 BALL CORNER 3.125 REF COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN 6.90 NOM 7.00 5.25 TYP 9.90 10.00 3.75 TYP – 0.22 – – 0.75 BSC 0.35 TYP 1.00 – 10.10 MAX 7.10 NOTE A B C D E F E E1 D D1 D1 A A1 e b 8 7 6 5 4 3 2 1 b BOTTOM VIEW 7/2/03 2325 Orchard Parkway San Jose, CA 95131 TITLE 47C1, 47-ball (8 x 6 Array), 0.75 mm Pitch, 7.0 x 10.0 x 1.0 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 47C1 REV. A R 30 AT49BV320D(T) 3581C–FLASH–11/05 AT49BV320D(T) 41.2 48T – TSOP PIN 1 0º ~ 8º c Pin 1 Identifier D1 D L e b L1 E A2 A SEATING PLANE GAGE PLANE A1 SYMBOL A A1 A2 Notes: 1. This package conforms to JEDEC reference MO-142, Variation DD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. D D1 E L L1 b c e COMMON DIMENSIONS (Unit of Measure = mm) MIN – 0.05 0.95 19.80 18.30 11.90 0.50 NOM – – 1.00 20.00 18.40 12.00 0.60 0.25 BASIC 0.17 0.10 0.22 – 0.50 BASIC 0.27 0.21 MAX 1.20 0.15 1.05 20.20 18.50 12.10 0.70 Note 2 Note 2 NOTE 10/18/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. 48T REV. B R 31 3581C–FLASH–11/05 42. Revision History Revision No. Revision A – Sept. 2005 Revision B – Oct. 2005 History • • • • • • Revision C – Nov. 2005 • • Initial Release Added Top Boot version. Added Sector Address Table for the AT49BV320DT. Added CFI information for the AT49BV320DT. Modified Program Suspend/Resume Procedure on page 11 to match the flow chart. Modified Erase Suspend/Resume Procedure on page 13 to match the flow chart. Added CBGA Package Option. Changed the CFI values of addresses 20h & 24h to 0002h and 0004h, respectively. 32 AT49BV320D(T) 3581C–FLASH–11/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: T he information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDITIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. A tmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life © Atmel Corporation 2005 . A ll rights reserved. A tmel®, logo and combinations thereof, Everywhere You Are ® a nd others, are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. Printed on recycled paper. 3581C–FLASH–11/05 /xM