SRA2211EF

Semiconductor SRA2211EF PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2211EF Marking DR Package Code SOT-523F Outline Dimensions unit : ■ Equivalent Circuit mm 1.60±0.1. 0.88±0.1. C(OUT) 1 1.60±0.1 1.00±0.1 B(IN) R1 3 2 0.25~0.30 R1 = 10KΩ E(COMMON) +0.1 0.68 -0.05 0~0.1 1.11±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KSR-4015-000 1 SRA2211EF Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 150 150 -55 ∼ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 10 -500 -500 -0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-4015-000 2