AS8ERLC128K32

PRELIMINARY SPECIFICATION Austin Semiconductor, Inc. 128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 compliant • SPACE Level Process Flow I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 EEPROM E EPROM AS8ERLC128K32 (Top View) 68 Lead CQFP 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 10 60 11 59 12 58 13 57 14 56 15 55 16 54 17 53 18 52 19 51 20 50 21 49 22 48 23 47 24 46 25 45 26 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 Vcc A11 A12 A13 *A15 *A14 A16 CS1\ OE\ CS2\ NC WE2\ WE3\ WE4\ NC NC RDY RES\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc PIN ASSIGNMENT FEATURES • Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode • Automatic Byte Write: 15 ms (MAX) • Automatic Page Write (128 bytes): 15 ms (MAX) • Data protection circuit on power -on/off • Low power CMOS MNOS cell Technology • 104 Erase/Write cycles (in Page Mode) • Software data protection • TTL Compatible Inputs and Outputs • Data Retention: 10 years • Ready/Busy\ and Data Polling Signals • Write protection by RES\ pin • Radiation Tolerant: Proven total dose 40K to 100K RADS* • Shielded Package for Best Radiation Immunity • Operating Temperature Ranges: Military: -55oC to +125oC Industrial: -40oC to +85oC I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 *Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct use of these address lines is required for operation of the SDP mode to work properly. PIN NAME A0 to A16 I/O0 to I/O31 OE\ CE\ WE\ VCC FUNCTION Address Input Data Input/Output Output Enable Chip Enable Write Enable Power Supply OPTIONS • Timing 250 ns 300 ns • Package Ceramic Quad Flat pack w/ formed leads Ceramic Quad Flat pack w/ tie bar Shielded Ceramic Quad Flat pack Shielded Ceramic Quad Flat pack MARKINGS -250 -300 Ground VSS RDY/BUSY\ Ready Busy RES\ Reset Q QB SQ SQB No. 703Q No. 703QB No. 703SF No. 703SQB GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8ERLC128K32 is a 4 Megabit Radiation Tolerant EEPROM Module organized as 128K x 32 bit. User configurable to 256K x16 or 512Kx 8. The module achieves high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. The military grade product is manufactured in compliance to MIL-STD 883, making the AS8ERLC128K32 ideally suited for military or space applications. The module is offered as a 68 lead 0.880 inch square ceramic quad flat pack. It has a max. height of 0.200 inch (non-shielded). This package design is targeted for those applications which require low profile SMT Packaging. * contact factory for test reports. ASI does not guarantee or warrant these performance levels, but references these third party reports. AS8ERLC128K32 Rev. 1.9 06/06 FUNCTIONAL BLOCK DIAGRAM For more products and information please visit our web site at www.austinsemiconductor.com Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 PRELIMINARY SPECIFICATION Austin Semiconductor, Inc. TRUTH TABLE MODE Read Standby Write Deselect Wirte Inhibit Data\ Polling Program Reset CE\ VIL VIH VIL VIL X X VIL X OE\ VIL X 3 EEPROM E EPROM AS8ERLC128K32 WE\ VIH X VIL VIH VIH X VIH X RES\ VH X VH VH X X VH VIL 2 RDY/BUSY\ High-Z High-Z 1 I/O Dout High-Z Din High-Z ----Dout (I/O7) High-Z VIH VIH X VIL VIL X High-Z to VOL High-Z ----VOL High-Z NOTES: 1. RDY/Busy\ output has only active LOW VOL and high impedance state. It can not go to HIGH (VOH) state. 2. VCC - 0.5V < VH < VCC+0.5V 3. X : DON'T CARE AS8ERLC128K32 Rev. 1.9 06/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 PRELIMINARY SPECIFICATION Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Vcc Supply Relative to Vss Vcc ............................................................................-0.6V to +7.0V Operating Temperature Range(1) ..................-55°C to +125°C Storage Temperature Range .........................-65°C to +150°C Voltage on any Pin Relative to Vss...................-0.5V to +7.0V (2) Max Junction Temperature**.......................................+150°C Thermal Resistance junction to case (θJC): Package Type Q...........................................11.3° C/W Package Type P & PN..................................2.8° C/W NOTES: 1) Including electrical characteristics and data retention. 2) VIN MIN = -1.0V for pulse width < 20ns. EEPROM E EPROM AS8ERLC128K32 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity (plastics). ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC