AS8F512K32

SRAM S RAM Austin Semiconductor, Inc. 128K x 32 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 AS8S128K32 PIN ASSIGNMENT (Top View) 68 Lead CQFP (Q & Q1) FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns • Built in decoupling caps for low noise operation • Organized as 128K x32; User configured as 256Kx16 or 512K x8 • Operation with single 5 volt supply • Low power CMOS • TTL Compatible Inputs and Outputs • 2V Data Retention, Low power standby 66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P) OPTIONS • Timing 15ns 17ns 20ns 25ns 35ns 45ns Package Ceramic Quad Flatpack Ceramic Quad Flatpack Pin Grid Array -8 Series Pin Grid Array -8 Series MARKINGS -15 -17 -20 -25 -35 -45 • Q Q1 P PN No. 702 No. 802 No. 802 66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN) NOTE: PN indicates a no connect on pins 8, 21, 28, 39 GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. The military temperature grade product is suited for military applications. The AS8S128K32 is offered in a ceramic quad flatpack module per SMD-5962-95595 with a maximum height of 0.140 inches. This module makes use of a low profile, mutlichip module design. This device is also offered in a 1.075 inch square ceramic pin grid array per SMD 5692-93187, which has a maximum height of 0.195 inches. This package is also a low profile, multi-chip module design reducing height requirements to a minimum. CE4 WE4 128K x 8 CE3 WE3 M2 128K x 8 M3 I/O 24 - I/O 31 128K x 8 CE2 WE2 M1 I/O 16 - I/O 23 CE1 WE1 OE A0 - 16 128K x 8 M0 I/O 8 - I/O 23 For more products and information please visit our web site at www.austinsemiconductor.com AS8S128K32 Rev. 4.0 5/03 I/O 0 - I/O 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM S RAM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage of Vcc Supply Relative to Vss.....................-1V to +7V Storage Temperature..........................................-65°C to +150°C Short Circuit Output Current(per I/O)...............................20mA Voltage on Any Pin Relative to Vss..................-.5V to Vcc+1V Maximum Junction Temperature**.................................+175°C *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. AS8S128K32 This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55°C