MT5C2564_05

SRAM S RAM Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88681 • SMD 5962-88545 • MIL-STD-883 MT5C2564 PIN ASSIGNMENT (Top View) FEATURES • • • • High Speed: 15, 20, 25, 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 DQ1 WE\ A1 A0 NC Vcc NC 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) 3 2 1 28 27 A2 A3 A4 A5 A6 A7 A8 A9 CE\ 4 5 6 7 8 9 10 11 12 26 25 24 23 22 21 20 19 18 A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 13 14 15 16 17 DQ1 WE\ NC Vss NC 28-Pin Flat Pack (F) NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ NC Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OPTIONS • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access • Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack MARKING -15 -20 -25 -35 -45 -55* -70* Vcc A15 A14 A13 A12 A11 A10 NC NC DQ3 DQ2 DQ1 DQ0 WE\ C EC F No. 106 No. 204 GENERAL DESCRIPTION • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power L The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The x4 configuration features common data input and output. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2564 Rev. 3.1 6/05 1 SRAM S RAM Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC A0 A1 MT5C2564 GND ROW DECODER A3 A4 A5 A13 A14 A15 262,144-BIT MEMORY ARRAY I/O CONTROL A2 DQ4 DQ1 CE\ COLUMN DECODER WE\ A6 A7 A8 A9 A10 A11 A12 POWER DOWN TRUTH TABLE MODE STANDBY READ WRITE CE\ H L L WE\ X H L DQ HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM S RAM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Vss..................................-0.5V to +7V Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V Storage Temperature......................................................-65oC to +150oC Power Dissipation..............................................................................1W Short Circuit Output Current.........................................................50mA Lead Temperature (soldering 10 seconds)....................................+260oC Junction Temperature..................................................................+175oC MT5C2564 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage CONDITIONS SYM VIH VIL MIN 2.2 -0.5 -10 -10 2.4 MAX VCC+0.5 0.8 10 10 UNITS V V µA µA V NOTES 1 1, 2 0V VCC -0.2V; f = 0 Hz "L" Version Only SYM Icc -15 165 -20 150 -35 120 -45 120 UNITS NOTES mA 3 ISBT2 45 45 40 25 25 mA ISBC2 ISBC2 20 4 20 4 20 4 20 4 20 4 mA mA CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz VCC = 5V o SYM CI CO MAX 10 12 UNITS pF pF NOTES 4 4 MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM S RAM Austin Semiconductor, Inc. MT5C2564 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 15 15 15 3 3 8 0 15 15 12 12 0 2 12 7 0 0 0 20 15 15 0 2 15 10 0 0 0 0 20 25 18 18 0 2 17 12 0 0 0 3 3 10 0 25 35 30 30 0 5 30 20 0 0 0 20 20 20 3 3 10 0 35 45 40 40 0 5 40 20 0 0 0 25 25 25 3 3 20 0 45 35 35 35 3 3 20 45 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 6, 7 4 4 7 10 11 20 20 7 6, 7 MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM S RAM Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 MT5C2564 167Ω Q 30pF VTH = 1.73V Q 167Ω 5pF VTH = 1.73V Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, 4. 5. 6. allowing for actual tester RC time constant. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 7. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CONDITIONS SYM VDR CE\ > (VCC - 0.2V) VIN > (VCC - 0.2V) or < 0.2V VCC = 2V VCC = 3V tCDR tR 0 tRC ICCDR MIN 2 MAX --1 2 --UNITS V mA mA ns ns 4 4, 11 NOTES LOW Vcc DATA RETENTION WAVEFORM VCC t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR V DR MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 432 4321 4321 1 4321 321 321 321 321 CE\ VIH VIL 2365 4365 87 4365 21214321 87 41214321 21214321 87 21214321 4365 87 87654321 4321 321 87654321 4321 87654321 87654321 321 DON’T CARE UNDEFINED SRAM S RAM Austin Semiconductor, Inc. MT5C2564 READ CYCLE NO. 1 8, 9 ttRC RC ADDRESS VALID ttAA AA t OH tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 ttRC RC CE\ 7, 8, 10 ttLZCE LZCE tACE tACE DQ DATA VALID HZCE tHZCE t t PU tPU Icc ttPD PD MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM S RAM Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) WC tWC MT5C2564 t ADDRESS tAW tAW tAS tAS CE\ WE\ tCW tCW t WP tWP1 tDS tDS AH tAH t D Q DATA VAILD HIGH Z WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW tCW tCW t AH tAH CE\ tAS tAS t WP tWP1 tDS t DH tDH WE\ Q HIGH-Z DON’T CARE UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 65432111 1 422 3 65432111 1 422 3 65432111 1 422 3 65432111 1 422 3 432 4321 4321 1 4321 321 321 321 6 431113210987654321 254 436113210987654321 154 2 436113210987654321 154 2 431113210987654321 254 6 D tHZWE DATA VALID 321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321 098765432121098765432109876543210987654321 098765432121098765432109876543210987654321 t DH tDH tLZWE 109876543210987654321 109876543210987654321 987654321 987654321 987654321 116543210987654321 27 1 2765432109876543 1 21 1 276543210987654321 2 SRAM S RAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD #5962-88681, Case Outline L MT5C2564 D A Q L Pin 1 S1 E b b2 e NOTE 0o to 15o c eA SMD SPECIFICATIONS MIN MAX SYMBOL A --0.200 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.280 E 0.220 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM S RAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD# 5962-88681, Case Outline X D1 B2 D2 L2 MT5C2564 E3 e E E1 E2 h x 45o D hx45o L B1 D3 A1 A SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM S RAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case (Package Designator F) SMD 5962-88681 & 5962-88545, Case Outline Y MT5C2564 e b D S Top View L c E A Q E2 E3 SYMBOL A b c D E E2 E3 e L Q S SMD SPECIFICATIONS MIN MAX 0.090 0.130 0.015 0.022 0.004 0.009 --0.740 0.380 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM S RAM Austin Semiconductor, Inc. MT5C2564 ORDERING INFORMATION EXAMPLE: MT5C2564C-20L/IT Device Number MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 Package Speed Options** Process Type ns C C C C C C C -15 -20 -25 -35 -40 -55 -70 L L L L L L L /* /* /* /* /* /* /* EXAMPLE: MT5C2564EC-45/XT Device Number MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 Package Speed Options** Process Type ns EC EC EC EC EC EC EC -15 -20 -25 -35 -40 -55 -70 L L L L L L L /* /* /* /* /* /* /* EXAMPLE: MT5C2564F-35/883C Device Number MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 MT5C2564 Package Speed Options** Process ns Type F F F F F F F -15 -20 -25 -35 -40 -55 -70 L L L L L L L /* /* /* /* /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power -40oC to +85oC -55oC to +125oC -55oC to +125oC MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM S RAM Austin Semiconductor, Inc. MT5C2564 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C ASI Part # MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C MT5C2564C-35L/883C MT5C2564C-45L/883C MT5C2564C-55L/883C MT5C2564C-70L/883C SMD Part # 5962-8868106LA 5962-8868105LA 5962-8868101LA 5962-8868102LA 5962-8868103LA 5962-8868104LA 5962-8854501LA 5962-8854502LA 5962-8854503LA 5962-8854504LA ASI Package Designator EC ASI Part # MT5C2564EC-20/883C MT5C2564EC-25/883C MT5C2564EC-35/883C MT5C2564EC-45/883C MT5C2564EC-55/883C MT5C2564EC-70/883C MT5C2564EC-35L/883C MT5C2564EC-45L/883C MT5C2564EC-55L/883C MT5C2564EC-70L/883C SMD Part # 5962-8868106XA 5962-8868105XA 5962-8868101XA 5962-8868102XA 5962-8868103XA 5962-8868104XA 5962-8854501XA 5962-8854502XA 5962-8854503XA 5962-8854504XA ASI Package Designator F ASI Part # MT5C2564F-20/883C MT5C2564F-25/883C MT5C2564F-35/883C MT5C2564F-45/883C MT5C2564F-55/883C MT5C2564F-70/883C MT5C2564F-35L/883C MT5C2564F-45L/883C MT5C2564F-55L/883C MT5C2564F-70L/883C SMD Part # 5962-8868106YA 5962-8868105YA 5962-8868101YA 5962-8868102YA 5962-8868103YA 5962-8868104YA 5962-8854501YA 5962-8854502YA 5962-8854503YA 5962-8854504YA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12