AMMC-6550-W50

AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 m (63 x 51 mils) Chip Size Tolerance: ± 10 m (± 0.4 mils) Chip Thickness: 100 ± 10 m (4 ± 0.4 mils) Pad Dimensions: 100 x 100 m (4 x 4 ± 0.4 mils) Description Features AMMC-6550 is an image rejection mixer (IRM), which can also be used as an IQ mixer. The AMMC-6550 utilizes two distributed passive FET mixers and a Lange coupler realized in Avago Technologies unique 0.25m gate length Enhancement mode PHEMT (E-PHEMT) technology. Although the AMMC-6550 works as a resistive mixer, the mixer can be biased with a positive DC voltage (+0.4V Typ.).      AMMC-6550 is designed for use in commercial digital radios and wireless LANs. The mixer requires an off-chip 90-degree hybrid to achieve signal image rejection and +0.4V (Typ.) DC bias. Wide frequency range: 15 - 50 GHz Low conversion loss: 10 dB (Typ.) Image Rejection: 15 dB (Typ.) High Input IP3: +20dBm Positive polarity for Gate and Drain Bias Schematic RF Vg drain Applications     Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax)  WLL and MMDS loops IF1 IF2 LO gate Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when units are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. The manufacturer assumes no responsibilities for ESD damage due to improper storage and handling of these devices. AMMC-6550 Maximum Ratings [1] Symbol Parameters and Conditions Units Minimum Maximum Vg Gate Supply Voltage V -1.2 +1.2 Pin CW Input Power (IF and LO port) dBm 25 Tch Operating Channel Temperature °C +150 Tstg Storage Case Temperature °C Tmax Max. Assembly Temp (60 sec. max) °C -65 +150 +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. AMMC-6550 DC Specifications/Physical Properties [1] Symbol Parameters and Test Conditions Units Typical Vg Gate Supply Operating Voltage V +0.4 Ig Gate Supply Current (under any RF power drive and temperature) mA 0 Note: 1. Ambient operational temperature Ta=25°C unless otherwise noted. AMMC-6550 Typical performances (TA= 25°C, Vg=+0.4 V, IF frequency=1GHz, Zo=50 ) Symbol Parameters and Test Conditions Units Typical FRF RF Frequency Range GHz 15 - 50 FLO LO Frequency Range GHz 15 - 50 FIF IF Frequency Range GHz DC - 5 PLO Lo port pumping power dBm >10 CG RF to IF conversion gain dB -10 RL_RF RF Port Return Loss dB -10 RL_LO LO Port Return Loss dB -15 RL_IF IF Port Return Loss dB -10 IR Image rejection ratio dB 15 LO-RF Iso. LO to RF port Isolation dB 20 LO-IF Iso. LO to IF port Isolation dB 20 RF-IF Iso. RF to IF port Isolation dB 15 IIP3 Input IP3, Fdelta=100MHz, Prf=-10dBm, Plo=15dBm dBm 20 P-1 Input port power at 1dB gin compression point, Plo=+15dBm dBm +10 NF Noise Figure dB 10 2 AMMC-6550 RF Specifications [2, 3, 6, 7] (TA= 25°C, Vg=+0.4V, Plo=+10dBm, Zo=50 ) Symbol LO=17GHz Parameters and Test Conditions [4] CG Conversion Gain IR Image Rejection Ratio [5] Units Min. Typ. dB -11.5 -10 dB -14 LO=28GHz Max. Min. Typ. -10.5 -9.5 -12 -18.6 LO=40GHz Max. -12 Notes: 2. Small/Large signal data measured in a fully de-embedded test fixture from Ta=25°C. 3. Specifications are derived from measurements in 50 test environment. 4. 100% on-wafer RF testing is done at RF frequency = 19, 30, and 42GHz; IF frequency = 1GHz. 5. 100% on-wafer RF testing is done at RF frequency = 15, 26, and 38GHz; IF frequency = 2GHz. 6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency = 1.0-2.0GHz 7. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc. Typical distribution of conversion gain and image rejection ratio based on 5000 parts. StdDev=0.26 Conversion Gain LO=17GHz,RF=19GHz StdDev=0.27 Conversion Gain LO=40GHz, RF=42GHz StdDev=0.89 Image Rejection Ratio LO=28GHz, RF=26GHz 3 StdDev=0.24 Conversion Gain LO=28GHz, RF=30GHz StdDev=0.53 Image Rejection Ratio LO=17GHz, RF=15GHz StdDev=1.15 Image Rejection Ratio LO=40GHz, RF=38GHz Min. Typ. -12 -10.3 -17.5 Max. -12 Biasing and Operation The recommended DC bias condition for optimum performance, and reliability is Vg=+0.4 volts. There is approximately zero current consumption for the gate biasing because the FET mixer was designed as the passive operation. Vg RF IF1 Figure 1 is a simple block diagram, as reference for Figure 2. Figure 2 is a schematic of the image-rejection (SSB) mixer MMIC connected to an off-chip quadrature hybrid. Figures 3 through Figure 11 show typical down conversion measurement results under the image rejection operation. Data presented for the AMMC-6550 was obtained using the circuit described here. Please note that the image rejection and isolation performance is dependent on the selection of the low frequency quadrature hybrid. The performance specification of the low frequency quadrature hybrid as well as the phase balance and VSWR of the interface to the AMMC-6550 will affect the overall mixer performance. IF2 LO Figure 1. AMMC-6550 Schematic No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. The AMMC-6550 is not recommended for up conversion applications. LSB USB IF RF 15-50GHz IF LO +0.4V 100pF Vg RF IF1 LSB USB IF2 LO LO 15-50GHz +10dBm Figure 2. AMMC-6550 Assembly diagram for SSB mixer applications. 50 termination is required for the unwanted side-band termination 4 AMMC-6550 Typical performances (TA = 25°C, Vg =+0.4 V) 0 0 -5 -5 LSB -10 -10 -15 -15 -20 CG [dB] CG [dB] USB LSB -20 -25 -25 -30 -30 USB -35 -35 10 15 20 25 30 35 Frequency [GHz] 40 45 50 10 55 15 20 25 30 35 40 Frequency [GHz] 45 50 55 Figure 4. Typical conversion Gain, Plo=+10dBm, IF2=1GHz Figure 3. Typical conversion Gain, Plo=+10dBm, IF1=1GHz 15 20 P-1[dBm] @Plo=14dBm 10 CG [dB], P-1[dBm] Noise Figure [dB] 15 5 P-1[dBm] @Plo=10dBm 0 -5 CG[dB] @Plo=14dBm -10 10 5 CG[dB] @Plo=10dBm -15 0 15 20 25 30 35 Frequency [GHz] 40 45 50 Figure 5. Typical RF port input power (@P-1), Plo=+10dBm, Fif=1GHz 15 20 25 30 35 Frequency [GHz] 40 45 50 Figure 6. Typical Noise Figure, Plo=10dBm, Fif=1GHz 0 25 -5 IIP3[15dBm] USB -10 -15 15 IIP3[10dBm] 10 CG [dB] IIP3 [dBm] 20 -20 -25 LSB -30 5 -35 -40 0 15 20 25 30 35 Frf [GHz] 40 Figure 7. Typical IP3, Fif=1GHz, Plo=10dBm and 15dBm 5 45 50 -20 -15 -10 -5 0 5 Plo [dBm] 10 15 Figure 8. Typical Conversion gain vs. LO power, Prf=-20dBm, and Flo=30GHz 20 0 0 -5 USB(13dBm) -10 Return Loss[dB] Concersion Gain[dB] -5 USB(10dBm) -15 LSB(10dBm) -20 LSB(13dBm) -25 -20 -25 -35 0 0.2 0.4 0.6 Vgs[V] 0.8 1 15 1.2 0 -5 -5 -10 -10 Return-Loss [dB] 0 -15 -20 -25 25 30 35 Frf [GHz] 40 45 50 -15 -20 -25 -30 -30 -35 20 Figure 10. Typical RF port Return Loss vs. Frequency, Plo=+10dBm Figure 9. Typical Conversion gain vs. Gate voltage, Flo=30GHz, Plo=+10dBm and +13dBm Return Loss [dB] -15 -30 -30 -35 0 1 2 3 4 5 6 IF Frequency [GHz] Figure 11. Typical IF port Return Loss vs. IF frequency, Frf=35GHz, and Plo=+10dBm Figure 13. Bond pad location (um) 6 -10 15 20 25 30 35 Flo [GHz] 40 45 50 Figure 12. Typical LO port return Loss vs. Frequency, Plo=+10dBm, Fif=1GHz Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1,2]. For conductive epoxy, the amount should be just enough to provide a thin fillet around the bottom perimeter of the die. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. duration of 76  8mS. A guided wedge at an ultrasonic power level of 64dB can be used for the 0.7mil wire. The recommended wire bonding stage temperature is 150  2C. Thermo-sonic wedge bonding is the preferred method for wire attachment to the bond pads. The RF connections should be kept as short as possible to minimize inductance. Gold mesh or double-bonding with 0.7mil gold wire is recommended. Mesh can be attached using a 2mil round tracking tool and a too force of approximately 22grams with an ultrasonic power of roughly 55dB for a This MMIC is also static sensitive and ESD handling precautions should be taken. The chip is 100ìm thick and should be handled with care. This MMIC has exposed air bridges on the top surface. Handle at the edges or with a custom collet (do not pick up die with vacuum on die center). Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Eutectic attach is not recommended and may jeopardize reliability of the device. Vgs 100pF Note: 1. Flares on thin film substrate compensate bonding wire inductance. LO RF IF1 Figure 14. Recommended die assembly 7 IF2 Ordering Information: AMMC-6550-W10 = 10 devices per tray AMMC-6550-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. Obsoletes AV01-0394EN AV02-1285EN - September 23, 2011