AT-42085

AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42085 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Low Cost Plastic Package • Lead-free Option Available 85 Plastic Package AT-42085 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 0 1 80 500 150 -65 to 150 Thermal Resistance [2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 7.7 mW/°C for Tc > 85°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol |S 1E|  P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = 1.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f= 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz — µA µA pF Min. 15.5 Typ. 17.0 11.0 5.0 0.5 0.0 14.0 9.5 .0 3.5 13.5 9.5 8.0 150 Max. 30 70 0. .0 0.3 Note: 1. For this test, the emitter is grounded.  AT-42085 Typical Performance, TA = 25°C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 20 16 12 P1dB 10 V 6V 4V 16 |S21E|2 GAIN (dB) 2.0 GHz 20 P1dB 4.0 GHz 12 16 2.0 GHz 8 G1 dB (dB) 4.0 GHz 12 G1dB 4.0 GHz 16 G1 dB (dB) 14 12 10 0 G1dB 10 V 6V 4V 4 8 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 10 20 30 IC (mA) 40 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 MAG |S21E|2 MSG 24 21 18 GAIN (dB) 15 12 9 6 3 0 0.5 1.0 2.0 NFO GA 4 3 2 1 0 3.0 4.0 5.0 NFO (dB) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 3 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 5°C, VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 1.5 .0 .5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Mag. .7 .66 .65 .65 .65 .66 .68 .68 .69 .69 .69 .71 .75 S11 Ang. -50 -139 -168 175 163 157 149 141 133 15 114 103 91 dB 8.5 1.0 15.5 1. 9.7 8.0 6.3 5.1 3.9 3.0 . 1.4 0.6 S21 Mag. 6.5 11.3 5.96 4.06 3.06 .51 .07 1.79 1.57 1.41 1.8 1.17 1.07 Ang. 15 103 84 71 60 55 46 38 9 1 1 3 -6 dB -37.0 -9. -8.6 -7.0 -5.3 -4.0 -.8 -1.4 -19.7 -18.5 -17.1 -15.9 -15.1 S12 Mag. .014 .035 .037 .045 .054 .063 .07 .085 .104 .119 .139 .161 .177 Ang. 73 36 39 46 51 60 65 64 64 63 58 55 49 Mag. .90 .53 .45 .43 .4 .4 .41 .43 .45 .46 .47 .44 .40 S22 Ang. -16 -3 -33 -36 -41 -4 -48 -55 -61 -66 -71 -76 -85 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 5°C, VCE = 8 V, IC = 35 mA Freq. GHz 0.1 0.5 1.0 1.5 .0 .5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Mag. .54 .61 .61 .6 .63 .64 .66 .67 .68 .68 .68 .71 .74 S11 Ang. -90 -163 178 167 156 15 146 139 131 13 114 103 93 dB 33.1 .6 16.8 13.4 10.9 9. 7.6 6.3 5. 4. 3.4 .5 1.7 S21 Mag. 45.38 13.45 6.90 4.67 3.5 .89 .39 .07 1.81 1.6 1.48 1.34 1.1 Ang. 137 95 79 68 59 54 45 37 8 19 10 1 -8 dB -40.1 -3.8 -9.5 -6.4 -3.9 -.5 -1. -19.8 -18.6 -17. -16.4 -15.3 -14.5 S12 Mag. .010 .03 .034 .048 .064 .075 .088 .10 .117 .138 .15 .171 .188 Ang. 66 5 61 68 66 68 69 67 65 60 56 50 46 Mag. .76 .38 .34 .3 .31 .31 .30 .31 .33 .35 .35 .34 .31 S22 Ang. -6 -30 -8 -31 -36 -40 -48 -58 -67 -73 -79 -85 -96 A model for this device is available in the DEVICE MODELS section. AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 .0 4.0 NFO dB 1.1 1. 1.3 .0 3.5 Mag .05 .06 .10 .4 .46 Γopt Ang 16 77 131 -179 -18 RN/50 0.13 0.13 0.1 0.11 0.5 4 Ordering Information Part Numbers AT-4085 AT-4085G No. of Devices 10 100 Note: Order part number with a “G” suffix if lead-free option is desired. 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 ± 0.015 3.63 ± 0.38 1 420 45° BASE 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 EMITTER .085 2.15 2 .060 ± .010 1.52 ± .25 5° TYP. .006 ± .002 .15 ± .05 .07 0.43 .286 ± .030 7.36 ± .76 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-655EN AV0-119EN May 5, 008