HBAT-5400-TR1G

HBAT-5400, 5402, 540B, 540C High Performance Schottky Diode   for Transient Suppression Data Sheet Description The HBAT-540x series of Schottky diodes, commonly referred to as clipping /clamping diodes, are optimal for circuit and waveshape preservation applications with high speed switching. Low series resistance, R S, makes them ideal for protecting sensitive circuit elements against high current transients carried on data lines. With picosecond switching, the HBAT-540x can respond to noise spikes with rise times as fast as 1 ns. Low capacitance minimizes waveshape loss that causes signal degradation. Features • Ultra-low Series Resistance for Higher Current Handling • Low Capacitance • Low Series Resistance • Lead-free Option Available Applications RF and computer designs that require circuit protection, high-speed switching, and voltage clamping. Package Lead Code Identification (Top View) SINGLE 3 SERIES 3 1 0, B 2 1 2, C 2 COMMON ANODE 3 COMMON CATHODE 3 1 E 2 1 F 2 Absolute Maximum Ratings, TA= 25ºC Symbol I F IF- peak PT PINV TJ TSTG θ JC Parameter DC Forward Current Peak Surge Current (1µs pulse) Total Power Dissipation Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance, junction to lead Unit mA A mW V °C °C °C/W Absolute Maximum [1] HBAT-5400/-5402 HBAT-540B/-540C 0 1.0 50 30 150 -65 to 150 500 430 1.0 85 30 150 -65 to 150 150 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. Linear and Non-linear SPICE Model[2] 0.08 pF SPICE Parameters Parameter BV CJO EG IBV IS N RS PB PT M Unit V pF eV A A Ω V Value 40 3.0 0.55 10E-4 1.0E-7 1.0 .4 0.6  0.5 2 nH RS SPICE model Note: . To effectively model the packaged HBAT-540x product, please refer to Application Note AN114. HBAT-540x DC Electrical Specifications, TA = +25°C[1] Part Number HBAT-Code [2] Package Marking Lead Code Configuration V0 V   0 B  C   Maximum Forward Voltage VBR ( V) Minimum Breakdown Voltage C T (pF) Typical Capacitance R S (Ω) Typical Series Resistance t (ps) Maximum Eff. Carrier Lifetime Package Single Series   VF (mV) SOT-3 SOT-33 (3-lead SC-70) SOT-3 SOT-33 (3-lead SC-70) -5400     -540B -540 -540C   800 [3] 30[4] 3.0[5] .4 100[6] Notes: 1. TA = +5°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.         . Package marking code is laser marked. 3. IF = 100 mA; 100% tested 4. IR = 100 µA; 100% tested 5. VF = 0; f =1 MHz 6. Measured with Karkauer method at 0 mA guaranteed by design.  Typical Performance IF – FORWARD CURRENT (mA) IF – FORWARD CURRENT (mA) 100 TJ – JUNCTION TEMPERATURE (C) 300 500 100 160 Max. safe junction temp. 140 120 100 80 60 40 20 0 0 50 100 TA = +75C TA = +25C TA = –25C 150 200 250 IF – FORWARD CURRENT (mA) 10 10 1 1 0.1 0.01 TA = +75C TA = +25C TA = –25C 0 0.1 0.2 0.3 0.4 0.5 0.6 VF – FORWARD VOLTAGE (V) 0.1 0.01 TA = +75C TA = +25C TA = –25C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF – FORWARD CURRENT (mA) Figure 1. Forward Current vs. Forward Voltage at Temperature for HBAT-5400 and HBAT-5402. Figure 2. Forward Current vs. Forward Voltage at Temperature for HBAT-540B and HBAT-540C. Figure 3. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-5400 and HBAT-5402. Note: Data is calculated from SPICE parameters. Tj – JUNCTION TEMPERATURE (C) 160 Max. safe junction temp. 140 120 100 80 60 40 20 0 0 100 200 300 TA = +75C TA = +25C TA = –25C 400 500 600 IF – FORWARD CURRENT (mA) CT – TOTAL CAPACITANCE (pF) 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 VR – REVERSE VOLTAGE (V) Figure 4. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-540B and HBAT-540C. Note: Data is calculated from SPICE parameters. Figure 5. Total Capacitance vs. Reverse Voltage. Device Orientation For Outlines SOT-23/323 REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" represents date code. 3 Package Dimensions Outline SOT-23 e2 e1 Recommended PCB Pad Layout for Avago’s SOT-23 Products 0.039 1 0.039 1 E XXX e E1 0.079 2.0 L B D SYMBOL A A1 B C D E1 e e1 e2 E L C DIMENSIONS (mm) MIN. 0.79 0.000 0.37 0.086 2.73 1.15 0.89 1.78 0.45 2.10 0.45 MAX. 1.20 0.100 0.54 0.152 3.13 1.50 1.02 2.04 0.60 2.70 0.69 0.035 0.9 0.031 0.8 Dimensions in inches mm A A1 Notes: XXX-package marking Drawings are not to scale Tape Dimensions and Product Orientation For Outline SOT-23 P D P2 E P0 F W t1 D1 9° MAX Ko 8° MAX 13.5° MAX A0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2 SIZE (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.05 1.50 + 0.10 4.00 ± 0.10 1.75 ± 0.10 8.00 +0.30 –0.10 0.229 ± 0.013 3.50 ± 0.05 2.00 ± 0.05 B0 SIZE (INCHES) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 ± 0.002 0.059 + 0.004 0.157 ± 0.004 0.069 ± 0.004 0.315 +0.012 –0.004 0.009 ± 0.0005 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE DISTANCE BETWEEN CENTERLINE 4 Package Dimensions Outline SOT-323 (SC-70 3 Lead) e1 Recommended PCB Pad Layout for Avago’s SC70 3L/SOT-323 Products 0.026 E XXX e E1 L B D SYMBOL A A1 B C D E1 e e1 E L C DIMENSIONS (mm) MIN. MAX. 0.80 1.00 0.00 0.10 0.15 0.40 0.10 0.20 1.80 2.25 1.10 1.40 0.65 typical 1.30 typical 1.80 2.40 0.425 typical 0.079 0.039 A 0.022 Dimensions in inches A1 Notes: XXX-package marking Drawings are not to scale Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead) P P0 E D P2 F W C t1 (CARRIER TAPE THICKNESS) D1 Tt (COVER TAPE THICKNESS) 8° MAX. K0 8° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 8.00 ± 0.30 0.254 ± 0.02 5.4 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 0.315 ± 0.012 0.0100 ± 0.0008 0.205 ± 0.004 0.0025 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE 5 Applications Information Schottky Diode Fundamentals The HBAT-540x series of clipping/clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductor contact formed between a metal and an n-doped or a p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the semiconductor and fill the free-energy states in the metal. This flow of electrons creates a depletion or potential across the junction. The difference in energy levels between semiconductor and metal is called a Schottky barrier. P-doped, Schottky-barrier diodes excel at applications requiring ultra low turn-on voltage (such as zero-biased RF detectors). But their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. Therefore, this discussion will focus entirely on n-doped Schottky diodes. Under a forward bias (metal connected to positive in an n-doped Schottky), or forward voltage, VF, there are many electrons with enough thermal energy to cross the barrier potential into the metal. Once the applied bias exceeds the built-in potential of the junction, the forward current, IF, will increase rapidly as VF increases. When the Schottky diode is reverse biased, the potential barrier for electrons becomes large; hence, there is a small probability that an electron will have sufficient thermal energy to cross the junction. The reverse leakage current will be in the nanoampere to microampere range, depending upon the diode type, the reverse voltage, and the temperature. In contrast to a conventional p-n junction, current in the Schottky diode is carried only by majority carriers. Because no minority carrier charge storage effects are present, Schottky diodes have carrier lifetimes of less than 100 ps and are extremely fast switching semiconductors. Schottky diodes are used as rectifiers at f requencies of 50 GHz and higher. Another significant difference between Schottky and p-n diodes is the forward voltage drop. Schottky diodes have a threshold of typically 0.3 V in comparison to that of 0.6 V in p-n junction diodes. See Figure 6. CAPACITANCE P N METAL N CURRENT CAPACITANCE CURRENT 0.6 V 0.3 V – + – + BIAS VOLTAGE BIAS VOLTAGE PN JUNCTION SCHOTTKY JUNCTION Figure 6. Through the careful manipulation of the diameter of the Schottky contact and the choice of metal deposited on the n-doped silicon, the important characteristics of the diode (junction capacitance, C J; parasitic series resistance, RS; breakdown voltage, VBR; and forward voltage, VF,) can be optimized for specific applications. The HSMS70x series and HBAT-540x series of diodes are a case in point. Both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current, IS. Yet, different contact diameters and epitaxiallayer thickness result in very different values of junction capacitance, C J and RS. This is portrayed by their SPICE parameters in Table 1. Table 1. HBAT-540x and HSMS-270x SPICE Parameters. Parameter BV CJ0 EG IBV IS N RS PB PT M HBAT-540x 40 V 3.0 pF 0.55 eV 10E-4 A 1.0E-7 A 1.0 .4 Ω 0.6 V  0.5 HSMS-270x 5 V 6.7 pF 0.55 eV 10E-4 A 1.4E-7 A 1.04 0.65 Ω 0.6 V  0.5 At low values of IF ≤ 1 mA, the forward voltages of the two diodes are nearly identical. However, as current rises above 10 mA, the lower series resistance of the HSMS70x allows for a much lower forward voltage. This gives the HSMS-70x a much higher current handling capability. The trade-off is a higher value of junction capacitance. The forward voltage and current plots illustrate the differences in these two Schottky diodes, as shown in Figure 7. 6 300 100 I F – FORWARD CURRENT (mA) HSMS-270x HBAT-540x 10 1 Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is maintained at or below 150°C, although brief excursions to higher junction temperatures can be tolerated with no significant impact upon mean-time-to-failure, MTTF. In order to compute the junction temperature, Equations (1) and (3) below must be simultaneously solved. 11600 ( V F – I F R S ) .1 .01 0 0.1 0.2 0.3 0.4 0.5 0.6 IF = IS e nT J –1 (1) VF – FORWARD VOLTAGE (V) Figure 7. Forward Current vs. Forward Voltage at 25°C. Figure 7. Forward Current vs. Forward Voltage at 25°C. Because the automatic, pick-and-place equipment used to assemble these products selects dice from adjacent sites on the wafer, the two diodes which go into the HBAT540 or HBAT-540C (series pair) are closely matched — without the added expense of testing and binning. 2 1 1 T J n –4060 T J – 298 IS = I0 e 298 (2) (3) TJ = V F I F θ JC + TA where: I F = forward current IS = saturation current VF = forward voltage RS = series resistance TJ = junction temperature IO = saturation current at 5°C n = diode ideality factor θ JC = thermal resistance from junction to case (diode lead) = θpackage + θchip T A = ambient (diode lead) temperature Equation (1) describes the forward V-I curve of a Schottky diode. Equation () provides the value for the diode’s saturation current, which value is plugged into (1). Equation (3) gives the value of junction temperature as a function of power dissipated in the diode and ambient (lead) temperature. 6 Current Handling in Clipping/Clamping Circuits The purpose of a clipping/clamping diode is to handle high currents, protecting delicate circuits downstream of the diode. Current handling capacity is determined by two sets of characteristics, those of the chip or device itself and those of the package into which it is mounted. noisy data-spikes current limiting Vs long cross-site cable pull-down (or pull-up) 0V voltage limited to Vs + Vd 0V – Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. Consider the circuit shown in Figure 8, in which two Schottky diodes are used to protect a circuit from noise spikes on a stream of digital data. The ability of the diodes to limit the voltage spikes is related to their ability to sink the associated current spikes. The importance of current h andling capacity is shown in Figure 9, where the forward voltage generated by a forward current is compared in two diodes. The first is a conventional Schottky diode of the type generally used in RF circuits, with an RS of 7.7Ω. The second is a Schottky diode of identical characteristics, save the R S of 1.0 Ω. For the conventional diode, the relatively high value of RS causes the voltage across the diode’s terminals to rise as current increases. The power dissipated in the diode heats the junction, causing RS to climb, giving rise to a runaway thermal condition. In the second diode with low RS , such heating does not take place and the voltage across the diode terminals is maintained at a low limit even at high values of current. 7 VF – FORWARD VOLTAGE (V) 5 4 3 2 1 0 Rs = 1.0 Ω Rs = 7.7 Ω 0 0.1 0.2 0.3 0.4 0.5 IF – FORWARD CURRENT (mA) Figure 9. Comparison of Two Diodes. Figure 9. Comparison of Two Diodes. The key factors in these equations are: RS, the series resistance of the diode where heat is generated under high current conditions; θ chip, the chip thermal resistance of the Schottky die; and θ package, or the package thermal r esistance. RS for the HBAT-540x family of diodes is typically .4Ω, other than the HSMS-70x family, this is the lowest of any Schottky diode available. Chip thermal resistance is typically 40°C/W; the thermal resistance of the iron-alloyleadframe, SOT-3 package is typically 460°C/W; and the thermal resistance of the copper-leadframe, SOT-33 package is typically 110°C/W. The impact of package thermal resistance on the current handling capability of these diodes can be seen in Figures 3 and 4. Here the computed values of junction temperature vs. forward current are shown for three values of ambient temperature. The SOT-33 products, with their copper leadframes, can safely handle almost twice the current of the larger SOT-3 diodes. Note that the term “ambient temperature” refers to the temperature of the diode’s leads, not the air around the circuit board. It can be seen that the HBAT540B and HBAT-540C products in the SOT-33 package will safely withstand a steady-state forward current of 330 mA when the diode’s terminals are maintained at 75°C. For pulsed currents and transient current spikes of less than one microsecond in duration, the junction does not have time to reach thermal steady state. Moreover, the diode junction may be taken to temperatures higher than 150°C for short timeperiods without impacting device MTTF. Because of these factors, higher currents can be safely handled. The HBAT-540x family has the second highest current handling capability of any Avago diode, next to the HSMS-70x series. Part Number Ordering Information Part Number HBAT-5400-BLKG HBAT-5400-TR1G HBAT-5400-TRG HBAT-540-BLKG HBAT-540-TR1G HBAT-540-TRG HBAT-540B-BLKG HBAT-540B-TR1G HBAT-540B-TRG HBAT-540C-BLKG HBAT-540C-TR1G HBAT-540C-TRG No. of Devices 100 3,000 10,000 100 3,000 10,000 100 3,000 10,000 100 3,000 10,000 Container Antistatic Bag 7" Reel 13" Reel Antistatic Bag 7" Reel 13" Reel Antistatic Bag 7" Reel 13" Reel Antistatic Bag 7" Reel 13" Reel For product information and a complete list of distributors, please go to our web site:         www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change.  Copyright © 2005-2008 Avago Technologies.  All rights reserved.  Obsoletes 5989-4779EN AV02-1394EN - July 4, 2008