12106Z226KAT2A

X7S Dielectric General Specifications GENERAL DESCRIPTION X7S formulations are called “temperature stable” ceramics and fall into EIA Class II materials. Its temperature variation of capacitances within ±22% from –55°C to +125°C. This capacitance change is non-linear. Capacitance for X7S varies under the influence of electrical operating conditions such as voltage and frequency. X7S dielectric chip usage covers the broad spectrum of industrial applications where known changes in capacitance due to applied voltages are acceptable. PART NUMBER (SEE PAGE 4 FOR COMPLETE PART NUMBER EXPLANATION) 1206 Z Z 105 M A T 2 A Size (L” x W”) Voltage Dielectric Capacitance Capacitance Failure Rate A = N/A Terminations T = Plated Ni and Sn Packaging 2 = 7” Reel 4 = 13” Reel Special Code A = Std. Product 4 = 4V Z = X7S Code (In pF) Tolerance 6 = 6.3V 2 Sig. Digits + K = ±10% Z = 10V Number of M = ± 20% Y = 16V Zeros 3 = 25V 5 = 50V 1 = 100V 2 = 200V NOTE: Contact factory for availability of Tolerance Options for Specific Part Numbers. X7S Dielectric Typical Temperature Coefficient Capacitance vs. Frequency 10 +30 +20 Capacitance 0 -5 -10 -15 % % Cap Change 5 -20 -25 -60 -40 -20 0 20 40 60 80 100 120 140 Temperature (°C) 0 -10 -20 -30 1KHz 10 KHz 100 KHz 10 0.01 10 Frequency, MHz 1000 100 0 0 20 40 0.1 1 100 10 Frequency, MHz 100 120 Variation of Impedance with Chip Size Impedance vs. Frequency 100,000 pF - X7S 10 1,000 1.0 0.1 .01 1 10 100 1,000 Frequency, MHz The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order. 101316 80 1206 0805 1210 1.0 .01 60 Temperature °C Impedance, Impedance, Impedance, 100 1,000 1206 0805 1210 10,000 pF 0.10 10 MHz Variation of Impedance with Chip Size Impedance vs. Frequency 10,000 pF - X7S 1,000 pF 1.00 1 MHz Insulation Resistance vs Temperature 10,000 Frequency Variation of Impedance with Cap Value Impedance vs. Frequency 1,000 pF vs. 10,000 pF - X7S 0805 10.00 +10 Insulation Resistance (Ohm-Farads) TYPICAL ELECTRICAL CHARACTERISTICS 23 X7S Dielectric Specifications and Test Methods Parameter/Test Operating Temperature Range Capacitance Dissipation Factor Insulation Resistance Dielectric Strength Appearance Resistance to Flexure Stresses Capacitance Variation Dissipation Factor Insulation Resistance Solderability Appearance Resistance to Solder Heat Thermal Shock Load Life Load Humidity Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength 24 X7S Specification Limits -55ºC to +125ºC Within specified tolerance ≤ 5.0% for ≥ 100V DC rating ≤ 5.0% for ≥ 25V DC rating ≤ 10.0% for ≥ 10V DC rating ≤ 10.0% for ≤ 10V DC rating Contact Factory for DF by PN 100,000MΩ or 1000MΩ - μF, whichever is less No breakdown or visual defects No defects ≤ ±12% Measuring Conditions Temperature Cycle Chamber Freq.: 1.0 kHz ± 10% Voltage: 1.0Vrms ± .2V For Cap > 10 μF, 0.5Vrms @ 120Hz Charge device with rated voltage for 120 ± 5 secs @ room temp/humidity Charge device with 250% of rated voltage for 1-5 seconds, w/charge and discharge current limited to 50 mA (max) Deflection: 2mm Test Time: 30 seconds Meets Initial Values (As Above) ≥ Initial Value x 0.3 ≥ 95% of each terminal should be covered with fresh solder Dip device in eutectic solder at 230 ± 5ºC for 5.0 ± 0.5 seconds No defects,