BS170FTA

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C ID 0.15 mA Pulsed Drain Current I DM 3 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage 90 V I D =100µA, V GS=0V 3 V I D =1mA, V DS= V GS I GSS 10 nA V GS =15V, V DS =0V Zero Gate Voltage Drain Current I DSS 0.5 µA V DS=25V, V GS=0V Static Drain-Source On-State Resistance (1) R DS(on) 5 Ω V GS=10V, I D=200mA Forward Transconductance (1)(2) g fs 200 mS V DS=10V, I D=200mA Input Capacitance (2) C iss 60 pF VDS=10V, VGS =0V, f=1MHz Turn-On Delay Time (2)(3) t d(on) 10 ns Turn-Off Delay Time (2)(3) t d(off) 10 ns V DD ≈-15V, I D=600mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and