DMN2250UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
ADVANCE INFORMATION
NEW PRODUCT
20V
Features
RDS(on) max
ID
TA = +25°C
0.17Ω @ VGS = 4.5V
1.35A
0.23Ω @ VGS = 2.5V
1.15A
0.25Ω @ VGS = 1.8V
1.10A
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Description
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Applications
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DC-DC Converters
Power Management Functions
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Body
Diode
Gate
S
D
G
ESD PROTECTED
Bottom View
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2250UFB-7B
Notes:
Case
X1-DFN1006-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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