DMN2400UFD-7

NOT RECOMMENDED FOR NEW DESIGN USE DMN2450UFD DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance 0.6Ω @ VGS = 4.5V ID MAX TA = +25°C 0.9A 0.8Ω @ VGS = 2.5V 0.7A  Fast Switching Speed 1.0Ω @ VGS = 1.8V 0.5A  ESD Protected Gate 1.6Ω @ VGS = 1.5V 0.3A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability BVDSS 20V Features and Benefits RDS(ON) MAX Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Case: X1-DFN1212-3  Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Power Management Functions  Battery Operated Systems and Solid-State Relays  Terminal Connections: See Diagram  Load Switch  Weight: 0.005 grams (Approximate) Drain Body Diode Gate Gate Protection Diode ESD PROTECTED Top View Bottom View Source Equivalent Circuit Pin-out Top View Ordering Information (Note 4) Part Number DMN2400UFD-7 Notes: Case X1-DFN1212-3 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain