DMN3023L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
PRODUCT
INFORMATION
ADVANCED NEW
V(BR)DSS
Features and Benefits
ID
TA = +25°C
RDS(ON)
25mΩ @ VGS = 10V
6.2A
28mΩ @ VGS = 4.5V
5.8A
30V
Description and Applications
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Load Switch
DC-DC Converters
Terminal Connections: See Diagram
Power Management Functions
Weight: 0.009 grams (Approximate)
SOT23
D
ESD PROTECTED
S
G
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
DMN3023L-7
DMN3023L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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