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RS3BB-13-F

RS3BB-13-F

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    DIODE GEN PURP 100V 3A SMB

  • 数据手册
  • 价格&库存
RS3BB-13-F 数据手册
RS3A/B - RS3M/B 3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features · · · · · · Glass Passivated Die Construction Fast Recovery Time for High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak Ideally Suited for Automatic Assembly Plastic Material: UL Flammability Classification Rating 94V-0 B SMB A · · · · · · Min Max Min Max A 3.30 3.94 5.59 6.22 B 4.06 4.57 6.60 7.11 C 1.96 2.21 2.75 3.18 C D Mechanical Data Case: Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: Type Number SMB Weight: 0.09 grams (approx.) SMC Weight: 0.20 grams (approx.) J H SMC Dim G E D 0.15 0.31 0.15 0.31 E 5.00 5.59 7.75 8.13 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.00 2.62 2.00 2.62 All Dimensions in mm AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package A, B, D, G, J, K, M Suffix Designates SMC Package Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol RS3 A/AB RS3 B/BB RS3 D/DB RS3 G/GB RS3 J/JB RS3 K/KB RS3 M/MB Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 100 A Forward Voltage VFM 1.3 V IRM 5.0 250 mA Average Rectified Output Current Peak Reverse Current at Rated DC Blocking Voltage @ TT = 75°C @ IF = 3.0A @ TA = 25°C @ TA = 125°C Maximum Recovery Time (Note 3) Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: trr 150 250 500 ns Cj 50 pF RqJT 25 K/W Tj, TSTG -65 to +150 °C 1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. DS15005 Rev. E-2 1 of 2 RS3A/B - RS3M/B IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 10 1.0 0.1 Tj = 25°C IF Pulse Width: 300 µs 0.01 0 80 60 40 20 1 10 100 IR, INSTANTANEOUS REVERSE CURRENT (µA) IFSM, PEAK FORWARD SURGE CURRENT (A) Single Half-Sine-Wave (JEDEC Method) 0 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 100 0.4 NUMBER OF CYCLES AT 60 Hz Fig. 3 Forward Surge Current Derating Curve 1000 Tj = 125°C 100 10 Tj = 25°C 1.0 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) 0A Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DS15005 Rev. E-2 2 of 2 RS3A/B - RS3M/B
RS3BB-13-F 价格&库存

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RS3BB-13-F
  •  国内价格 香港价格
  • 3000+2.517573000+0.31231
  • 6000+2.437776000+0.30241

库存:5017