NOT RECOMMENDED
FOR NEW DESIGN
SBL830 - SBL860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
•
•
•
•
•
•
•
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
High Current Capability, Low VF
High Surge Capability
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
L
B
C
D
K
A
Mechanical Data
•
•
•
•
•
•
•
Pin 1
G
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage
@ IF = 8A, TC = 25°C
Peak Reverse Current
@ TC = 25°C
at Rated DC Blocking Voltage
@ TC = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
N
J
R
P
+
Pin 1 +
Pin 2 -
Maximum Ratings and Electrical Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Pin 2
E
Case: TO-220AC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: See Diagram
Terminals: Finish – Bright Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Weight: 2.3 grams (approximate)
Characteristic
TO-220AC
Dim
Min
Max
A
14.48 15.75
B
10.00 10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70 14.27
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
R
4.83
5.33
All Dimensions in mm
M
Symbol
VRRM
VRWM
VR
VR(RMS)
Case
@TA = 25°C unless otherwise specified
SBL
830
SBL
835
SBL
840
SBL
845
SBL
850
SBL
860
Unit
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
IO
8
A
IFSM
200
A
VFM
0.55
0.70
V
IRM
0.5
50
mA
Cj
700
pF
RθJC
6.9
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
DS23044 Rev. 5 - 3
1 of 3
www.diodes.com
SBL830-SBL860
© Diodes Incorporated
NOT RECOMMENDED
FOR NEW DESIGN
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
10
8
6
4
2
0
0
50
100
150
100
SBL830 - SBL845
10
SBL850 - SBL860
1.0
0.1
0.2
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
0.8
4000
T j = 25°C
8.3 ms single half-sine-wave
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
200
150
100
1000
50
100
0.1
0
1
10
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR , INSTANTANEOUS REVERSE CURRENT (mA)
0.4
100
10
1.0
0.1
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23044 Rev. 5 - 3
2 of 3
www.diodes.com
SBL830-SBL860
© Diodes Incorporated
NOT RECOMMENDED
FOR NEW DESIGN
Ordering Information
(Note 4)
Packaging
TO-220AC
Device
SBL8xx*
Shipping
50/Tube
* xx = Device type, e.g. SBL845
Notes:
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
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Copyright © 2010, Diodes Incorporated
www.diodes.com
DS23044 Rev. 5 - 3
3 of 3
www.diodes.com
SBL830-SBL860
© Diodes Incorporated