PART OBSOLETE – CONTACT US
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ZTX449
ISSUE3
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
OBSOLETE – PART DISCONTINUED
C
B
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VALUE
UNIT
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
Ptot
1
A
1
W
-55 to +200
°C
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
V(BR)CBO
MIN.
UNIT
CONDITIONS.
50
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
30
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO
0.1
10
µA
µA
Emitter Cut-Off Current IEBO
Collector-Base
Breakdown Voltage
TYP.
MAX.
0.1
µA
VCB=40V
VCB=40V, Tamb=100°C
VEB=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
1
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturati on Voltage
VBE(sat)
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1
V
IC=1A,VCE=2V*
Static Forward Current
Transfer Ratio
FE
Transition Frequency
fT
Output Capacitance
Cobo
0
100
80
40
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
300
150
15
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse w dt =300µs. Duty cycle ≤ 2%
ZTX449
OBSOLETE – PART DISCONTINUED
TYPICAL CHARACTERISTICS
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