ZXM62N03E6TA

ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.11V; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM62N03E6TA 7 8mm embossed 3000 units ZXM62N03E6TC 13 8mm embossed 10000 units DEVICE MARKING • 2N03 PROVISIONAL ISSUE A - MAY 1999 97 ZXM62N03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate Source Voltage V GS ± 20 V Continuous Drain Current (V GS=10V; T A=25°C)(b) (V GS=10V; T A=70°C)(b) ID 3.2 2.6 A Pulsed Drain Current (c) I DM 18 A Continuous Source Current (Body Diode) (b) IS 2.1 A Pulsed Source Current (Body Diode) I SM 18 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t