ZXM64N03XTC

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance MSOP8 • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Disconnect switches • Motor control Pin out ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL 7 12 embossed 1,000 ZXM64N03XTA ZXM64N03XTC 13 12 embossed S S 1 D D S D G D 4,000 Top view DEVICE MARKING ZXM4P03 ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXM64N03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate- Source Voltage V GS ⫾20 V Continuous Drain Current (V GS =4.5V; T A =25°C)(b) (V GS =4.5V; T A =70°C)(b) ID 5.0 4.0 A Pulsed Drain Current (c) I DM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A Pulsed Source Current (Body Diode)(c) I SM 30 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - OCTOBER 2005 2 SEMICONDUCTORS ZXM64N03X CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 SEMICONDUCTORS ZXM64N03X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs V I D =-250µA, V GS =0V 1 µA V DS =30V, V GS =0V ±100 nA 1.0 0.045 0.060 4.3 V GS =± 20V, V DS =0V V I =-250µA, V DS = V GS D Ω Ω V GS =10V, I D =3.7A V GS =4.5V, I D =1.9A S V DS =10V,I D =-1.9A DYNAMIC (3) Input Capacitance C iss 950 pF Output Capacitance C oss 200 pF Reverse Transfer Capacitance C rss 50 pF t d(on) 4.2 ns V DS =25 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time Rise Time tr Turn-Off Delay Time t d(off) Fall Time tf Total Gate Charge Qg 27 nC Gate-Source Charge Q gs 5 nC Gate Drain Charge Q gd 4.5 nC Diode Forward Voltage (1) V SD 0.95 Reverse Recovery Time (3) t rr Reverse Recovery Charge(3) Q rr 4.5 ns 20.5 ns 8 V DD =5V, I D =3.7A R G =6.2Ω, R D =4.0Ω (Refer to test circuit) ns V DS =24V,V GS =10V, I D =3.7A (Refer to test circuit) SOURCE-DRAIN DIODE V T j =25°C, I S =3.7A, V GS =0V 24.5 ns 19.1 nC T j =25°C, I F =3.7A, di/dt= 100A/µs (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 SEMICONDUCTORS ZXM64N03X TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS ZXM64N03X TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 6 SEMICONDUCTORS ZXM64N03X PACKAGE DETAILS PAD LAYOUT DETAILS c e 1.02 0.040 E E1 4.8 0.189 R1 mm inches D L R A2 A 0.41 0.016 A1 b 0.65 0.023 PACKAGE DIMENSIONS DIM Millimeters MIN Inches MAX MIN MAX 0.044 0.91 A1 0.10 0.20 0.004 0.008 B 0.25 0.36 0.010 0.014 C 0.13 D 2.95 e 1.11 0.036 A 0.18 3.05 0.005 0.116 0.65NOM e1 0.007 0.120 0.0256 0.33NOM 0.0128 E 2.95 3.05 H 4.78 L 0.41 0.66 0.016 0.026 ␪° 0° 6° 0° 6° 5.03 0.116 0.120 0.188 0.198 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 7 SEMICONDUCTORS