ZXM66P02N8TC

NOT RECOMMENDED FOR NEW DESIGN USE DMP2022LSS ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(on) -20V 0.025 ID -8.0A  High pulse current handling in linear mode  Low on-resistance  Fast switching speed  Low gate drive  Low profile SOIC package Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode.  Inrush protection circuits  DC-DC Converters  Power management functions  Disconnect switches  Motor control Mechanical Data  Case: SO-8  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See diagram below  Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (approximate) SO-8 Top View Ordering Information Product ZXM66P02N8TA Notes: Top View Equivalent Circuit (Note 1) Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 1. For packaging details, go to our website. Marking Information ZXM 66P02 YYWW ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 5 www.diodes.com September 2015 © Diodes Incorporated ZXM66P02N8 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V Pulsed Drain current Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value -20 12 -8.0 -6.5 -6.4 -28 -4.15 -28 Unit V V Value 1.56 12.5 2.5 20 80 50 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor PD (Note 3) Thermal Resistance, Junction to Ambient (Note 2) (Note 3) RJA Operating and storage temperature range Notes: TJ, TSTG W mW/C C/W C 2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 3. Same as note (3), except the device is measured at t  10 sec. 4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s – pulse width limited by maximum junction temperature. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -20   V ID = -250A, VGS = 0V Zero Gate Voltage Drain Current IDSS   -1 A VDS = -16V, VGS = 0V Gate-Source Leakage IGSS   -100 nA VGS = 12V, VDS = 0V VGS(th) -0.7   V ID = -250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage 0.025 RDS (ON)   Forward Transconductance (Notes 5 & 6) gfs  13.3  Diode Forward Voltage (Note 5) VSD   Reverse recovery time (Note 6) trr  23.1 Reverse recovery charge (Note 6) Qrr  Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Static Drain-Source On-Resistance (Note 5) 0.045 Ω VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.7A S VDS = -10V, ID = -3.2A 0.95 V IS = -3.2A, VGS = 0V  ns 12.2  nC  2068  pF  1038  pF Crss  506  pF Total Gate Charge (Note 7) Qg  43.3  nC Gate-Source Charge (Note 7) Qgs  3.5  nC Gate-Drain Charge (Note 7) Qgd  21.3  nC Turn-On Delay Time (Note 7) tD(on)  14.0  ns Turn-On Rise Time (Note 7) tr  44.3  ns Turn-Off Delay Time (Note 7) tD(off)  118.4  ns tf  98.4  ns IF = -3.2A, di/dt = 100A/s DYNAMIC CHARACTERISTICS (Note 6) Turn-Off Fall Time (Note 7) Notes: VDS = -15V, VGS = 0V F = 1MHz VGS = -4.5V, VDS = -10V, ID = -3.2A VDD = -10V, VGS = -5V ID = -3.2A, RG = 6.0 5. Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 2 of 5 www.diodes.com September 2015 © Diodes Incorporated ZXM66P02N8 Typical Characteristics -ID Drain Current (A) 4.5V 10V 2.5V 10 2V 1 1.5V -VGS 0.1 -ID Drain Current (A) 10V T = 25°C 4.5V T = 150°C 2.5V 10 2V 1.5V 1 -VGS 0.1 1V 0.01 0.1 1 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) -ID Drain Current (A) 1.6 1 T = 150°C T = 25°C 0.1 0.01 -VDS = 10V 1E-3 500.0m 1.0 1.5 2.0 VGS = -4.5V 1.4 1.0 0.8 0.6 1 2.5V 4.5V 10V 1 1 Document Number DS31965 Rev. 2 - 2 150 T = 150°C T = 25°C 0.01 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) -ID Drain Current (A) ZXM66P02N8 100 0.1 10 On-Resistance v Drain Current 50 10 1E-3 0.01 0.1 0 Normalised Curves v Temperature T = 25°C 0.1 ID = -250uA -50 -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance  2V VGS(th) VGS = VDS Tj Junction Temperature (°C) Typical Transfer Characteristics 1.5V RDS(on) 1.2 -VGS Gate-Source Voltage (V) -VGS ID = - 3.2A Source-Drain Diode Forward Voltage 3 of 5 www.diodes.com September 2015 © Diodes Incorporated ZXM66P02N8 Package Outline Dimensions  DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Suggested Pad Layout ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 4 of 5 www.diodes.com September 2015 © Diodes Incorporated ZXM66P02N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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