BCP030T

BCP030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm) The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width making the product ideally suited for applications where high -gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6 -18 GHz) or narrow-band applications. The BCP030T is produced using state of the art metallization with SI 3N4 passivation and is screened to assure reliability. PRODUCT FEATURES    25 dBm Typical Output Power 14 dB Typical Gain @ 12 GHz 0.25 X 300 Micron Recessed Gate APPLICATIONS    Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth PARAMETER/TEST CONDITIONS Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 50 Ohm Noise Figure (Vds=2V, Ids=15 mA Saturated Drain Current (Vgs = 0V, Vds = 1.0V) Transconductance (Vds = 2V, Vgs = 50% Idss) Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V) Drain Breakdown Voltage (Ig = 0.3 mA, source open) Source Breakdown Voltage (Ig = 0.3 mA, drain open) Thermal Resistance (Au-Sn Eutectic Attach) st TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz MIN. 24.5 13.0 TYPICAL 25.5 25.5 14.0 10.5 65 60 1.14 90 120 -1.1 -15.0 -13.0 121 MAX. UNIT dBm dB % dB 60 -2.5 120 -0.5 -12.0 mA mS V V V °C/W www.berex.com BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP030T ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C SYMBOL P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth PARAMETER/TEST CONDITIONS Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 50 Ohm Noise Figure (Vds=2V, Ids=15 mA Saturated Drain Current (Vgs = 0V, Vds = 1.0V) Transconductance (Vds = 2V, Vgs = 50% Idss) Pinch-off Voltage (Ids = 0.3 mA, Vds = 2V) Drain Breakdown Voltage (Ig = 0.3 mA, source open) Source Breakdown Voltage (Ig = 0.3 mA, drain open) Thermal Resistance (Au-Sn Eutectic Attach) -2.5 TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 60 MIN. 22.0 14.5 TYPICAL 23.0 23.0 15.5 11.5 45 45 1.14 90 120 -1.1 -15 -13 121 -0.5 -12 120 MAX. UNIT dBm dB % dB mA mS V V V °C/W MAXIMUM RATING (Ta = 25° C) SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12 V -6 V Idss 18 mA 22 dBm 175° C -60° C - 150° C 1.4 W CONTINUOUS 8V -3 V Idss 3 mA @ 3dB compression 150° C -60° C - 150° C 1.2 W Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device . www.berex.com BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 st September 2011 BCP030T PIN_POUT/GAIN, PAE (12 GHz) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) PIN_POUT/GAIN, PAE (18 GHz) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) www.berex.com BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 st September 2011 BCP030T S-PARAMETER (Vds = 8V, Ids = 50% Idss) FREQ. [GHZ] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 [MAG] 0.97 0.91 0.85 0.79 0.75 0.73 0.72 0.72 0.72 0.72 0.74 0.75 0.76 0.79 0.80 0.82 0.85 0.86 0.88 0.89 0.90 0.90 0.90 0.90 0.92 0.92 S11 [ANG.] -27.72 -53.85 -78.65 -100.97 -121.90 -139.47 -155.99 -168.99 -179.97 169.20 160.38 151.34 142.18 135.08 128.26 120.51 116.46 110.04 104.87 103.82 100.91 99.40 100.87 98.38 99.27 101.85 S21 [MAG] 9.10 8.41 7.57 6.73 5.95 5.24 4.62 4.14 3.71 3.37 3.04 2.81 2.58 2.37 2.21 2.05 1.88 1.73 1.57 1.43 1.30 1.15 1.04 0.93 0.83 0.76 S21 [ANG.] 159.71 141.85 126.23 112.12 99.32 88.30 77.67 68.95 61.22 53.50 46.46 39.07 32.32 25.60 19.05 12.14 5.62 -1.49 -9.16 -14.39 -20.35 -25.89 -30.07 -34.99 -38.62 -40.47 S12 [MAG] 0.019 0.036 0.048 0.055 0.061 0.062 0.062 0.063 0.060 0.060 0.060 0.059 0.059 0.059 0.060 0.061 0.060 0.064 0.065 0.066 0.069 0.068 0.067 0.066 0.068 0.064 S12 [ANG.] 74.59 61.30 50.31 41.94 35.64 30.97 24.97 21.67 19.65 18.02 16.99 13.84 14.91 12.56 12.24 10.92 8.30 5.45 3.39 3.64 1.83 1.36 -0.48 -1.84 -0.48 4.76 S22 [MAG] 0.71 0.66 0.59 0.54 0.48 0.44 0.40 0.38 0.36 0.34 0.33 0.32 0.30 0.28 0.25 0.21 0.17 0.13 0.10 0.11 0.17 0.24 0.31 0.39 0.45 0.49 S22 [ANG.] -10.54 -19.37 -26.23 -32.00 -37.41 -41.98 -48.43 -51.15 -54.78 -58.30 -60.45 -63.94 -65.39 -67.17 -70.97 -75.16 -84.42 -99.08 -131.69 -175.84 160.35 149.32 142.60 139.62 137.44 137.87 Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below. www.berex.com BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 st September 2011 BCP030T WIRE BONDING INFORMATION Using 1 mil. diameter, Au bonding wires. 1. Gate to input transmission line - Length and Height : 600 µm x 250 µm - Number of wire(s): 1 2. Drain to output transmission line - Length and Height : 400 µm x 250 µm - Number of wire(s) : 1 3. Source to ground plate - Length and Height : 250 µm x 300 µm - Number of wire(s) : 4 DISCLAIMER BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SU PPORT DEVICES WITHOUT THE EXPRESS WRITTEN APPROVAL OF BEREX. 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly us ed in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.berex.com BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 st September 2011