KTC3880S

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Small reverse transfer capacitance. Low noise figure. Production specification KTC3880S Pb Lead-free APPLICATIONS High frequency Low noise amplifier application. VHF band amplifier application. SOT-23 ORDERING INFORMATION Type No. KTC3879 Marking RR/RO/RY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IE PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction and Storage Temperature Value 40 30 4 20 -20 150 -55~150 Units V V V mA mA mW ℃ Document number: BL/SSSTC111 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTC3880S ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT NF Test conditions IC=100μA,IE=0 IC=100μA,IB=0 B MIN 40 30 4 TYP MAX UNIT V V V IE=100μA,IC=0 VCB=18V,IE=0 VEB=4V,IC=0 VCE=6V,IC=2mA VCE=6V, IC= 1mA VCC=6V,IE=1mA, f=100KHz 0.5 0.5 40 300 550 2.5 5.0 240 μA μA MHz dB CLASSIFICATION Rank Range Marking OF hFE R 40-80 AQR O 70-140 AQO Y 100-240 AQY PACKAGE OUTLINE Plastic surface mounted package A E SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm Document number: BL/SSSTC111 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor SOLDERING FOOTPRINT Production specification KTC3880S Unit : mm PACKAGE Device KTC3880S INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC111 Rev.A www.galaxycn.com 3