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RN4Z

RN4Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RN4Z - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RN4Z 数据手册
BLGALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 RN4Z(Z) VOLTAGE RANGE: 200 V CURRENT: 3.5 A DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RN4Z Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 UNITS VRRM VRMS VDC IF(AV) 200 140 200 3.5 A V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 120.0 A Maximum instantaneous forw ard voltage @ 3.5 A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA=25 @TA=100 (Note1) (Note2) (Note2) VF IR trr CJ RθJA TJ TSTG 0.92 50.0 1000.0 50 70 30 - 55 ---- + 150 - 55 ---- + 150 V A ns pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262014 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr RN4Z(Z) +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) 0 -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT FIG.3 --FORWARD DERATING CURVE INSTANTANEOUS FORWARD CURRENT 100 3.5 3.0 TJ =25 Pulse Width=300 µS 10 AMPERES 2.0 AMPERES Single Phase Half W ave 60Hz Resistive or Inductive L oad 1 1 .0 0 0.1 0 0 25 50 75 1 00 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 --TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT FIG.5--PEAK FORWARD SURGE CURRENT 160 140 120 100 200 JUNCTION CAPACITANCE,pF TJ=125 8.3ms Single Half Sine-Wave AMPERES 100 70 80 60 40 20 0 1 2 4 8 10 TJ=25 f=1MHz 20 10 .1 .2 .4 1.0 2 4 10 20 40 1 00 20 40 60 80 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz Document Number 0262014 BLGALAXY ELECTRICAL www.galaxycn.com 2.

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