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RU3Z

RU3Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RU3Z - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RU3Z 数据手册
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Diffused junction Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and s imilar solvents The plastic material carries U/L recognition 94V-0 RU3YX(Z) --- RU3C(Z) VOLTAGE RANGE: 100--- 1000 V CURRENT: 1.1 - 2.0 A DO - 15B MECHANICAL DATA Case: JEDEC DO-15B, molded plastic Terminals: Axial leads,solderable per MIL-STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.024 ounces, 0.68 grams Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RU3YX Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1.Measured with I F=0.5A, I R=1A, I rr=0.25A 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to ambient. RU3 400 280 400 1.5 RU3A 600 420 600 RU3B 800 560 800 1.1 RU3C 1000 700 1000 1.5 UNITS V V V A VRRM VRMS VDC IF(AV) 100 70 100 2.0 @TA=75 IFSM VF IR trr CJ RθJL TJ TSTG 50.0 20.0 A 0.95 1.5 10.0 2.5 V A @TA=25 @TA =100 (Note1) (Note2) (Note3) 300.0 50 50 12 400.0 100 30 ns pF /W - 55 ----- + 150 - 55 ----- + 150 www.galaxycn.com Document Number 0262045 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES RU3YX(Z)---RU3C(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 (+) 25VDC (approx) (-) PULSE GENERATOR (NOTE2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIM BASE FOR 10/20 ns/cm E FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES 2.0 RU3YX 10 RU3C RU3YX 1.5 RU3,RU3A,RU3C 1.0 1.0 AMPERES RU3B RU3B Single Phase Half Wave 60Hz Resistive or Inductive Load 0.1 T J =25 Pulse W idth=300 µ S 0.5 RU3,RU3A 0.01 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 50 FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 8.3ms Single Half Sine-Wave 200 100 60 40 20 10 RU3YX\RU3 40 30 RU3YX RU3A\RU3B \RU3C 20 4      TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 10 RU3,RU3A,RU3B,RU3C 0 1 5 10 50 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0262045 BLGALAXY ELECTRICAL 2.

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