SMTPB

BL GALAXY ELECTRICAL TELECOMMUNICATION PROTECTION FEATURES Bidirectional crowbar protection Voltage range:from 62V to 270V. Holding current:IH=150mA min SMTPB---SERIES BREAKDOWN VOLTAGE: 62 --- 270 V POWER DISSIPATION: 5.0 W SMB 4.5± 0.15 2.0± 0.15 3.5± 0.2 5.3± 0.2 1.25± 0.2 0.203MAX 0.2± 0.05 Repetitive peak pulse current:I PP=100A,10/1000 s. 2.3± 0.15 DESCRIPTION The SMTPB series are designed for protecting sensitive telecommunication equipment against lightning and transient voltages induced by AC power lines. The devices provide bidirectional protection by crowbar action.Their characteristic response to transien overvoltages makes them particularly suited to protect volatge sensitive telecommunication equipment. Dimensions in millimeters SCHEMATIC DIAGRAM Complies with the Peak surge voltage (V) Voltage waveform Current waveform ( s) Admissible Ipp (A) Necessary resistor ( ) following standards: ( s) CCITTK20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68,lightning surge type A FCC Part 68,lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET131-24 4000 4000 4000 IeveI 4 IeveI 4 1500 800 100 2500 1000 500 4000 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 5/320 2/10 10/1000 2/10 0.5/700 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310 100 100 100 100 100 200 100 25 500 100 500 100 ------------www.galaxycn.com Document Number 0286006 BLGALAXY ELECTRICAL 1. BL GALAXY ELECTRICAL ABSOLUTE MAXIMUM RATINGS (TA=25 Symbol P Ipp ITSM It dV/dt Tstg Tj TL 2 SMTPB---SERIES ) Parameter Power dissipation on infinite heatsink Peak pulse current Non repetitive surge peak on-state current I t vallue for fusing Critical rate of rise of off-state voltage Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm form case 2 Value Tamb=50 10/1000 s 8/20 s 2/10 s tp=20ms tp=20ms VRM 5.0 100 150 500 50 25 5 -55to+150 150 230 Unit W A A As kV/µS 2 THERMAL RESISTANCES Symbol R th(j-l) R th(j-a) Junction to leads (L lead=10m m ) Junction to am bient o n p rinted circuit (Llead=10m m ) Parameter Value 20 75 Unlt /W /W Type I RM @ V RM max. A V 56 61 90 108 117 162 180 198 216 243 VR @ I R m in. note1 V µA 62 68 100 120 130 180 200 220 240 270 50 50 50 50 50 50 50 50 50 50 V BO @ I BO max. note2 V mA 82 90 133 160 173 240 267 293 320 360 800 800 800 800 800 800 800 800 800 800 IH min. note3 mA 150 150 150 150 150 150 150 150 150 150 C max. note4 PF 300 300 200 200 200 200 200 200 200 200 SMTPB62 SMTPB68 SMTPB100 SMTPB120 SMTPB130 SMTPB180 SMTPB200 SMTPB220 SMTPB240 SMTPB270 2 2 2 2 2 2 2 2 2 2 ELECTRICAL CHARACTERISTICS (TA=25 I I PP ) Symbol Parameter V RM Stand-off voltage IRM Leakage current at stand-off voltage VR V V RM V BR V BO I BO IH IR I RM Continuous reverse voltage Break down voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance V BR V BO IH IBO IPP C Note1:IR measured at VR guarantees VBRmin≥V R Note3: See test circuit2. Note 2:Measured at 50Hz(1 cycle)-See test circuit 1. www.galaxycn.com Note4: VR=1V,F=1MHz,refer to fig.3 for C versus VR. Document Number 0286006 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES TEST CIRCUIT 1 FOR IBO AND VBO PARAMETERS: tp=20ms Auto Transformer 220V/2A R1 140 R2 240 k 220V SMTPB---SERIES static relay. Vout IBO measure D.U.T VBO measure TEST PROCEDURE : Transformer 220V/800V 5A Pulse Test duration (tp = 20ms): - For Bidirectional devices = Sw itchK is closed - For Unidirectional devices = Sw itch K is open. VOUT Selection - Device w ith VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device w ith VBO 200 Volt - VOUT = 480 VRMS, R2 = 240Ω. TEST CIRCUIT 2 FOR IH PARAMETER: R VBAT=-48V D.U.T. Vp Surge generator This is a GO-NO GOTest which allows to confirm the holding current (IH) level in a functionaltest circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge current : Ipp = 10A , 10/1000µ s. 3) The D.U.T will come back off-state within 50ms max. www.galaxycn.com Document Number 0286006 BLGALAXY ELECTRICAL 3. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE VVVVVV CURRENT VERSUS OVERLOAD DURATION VV (TJ INItIAL=25°C). ITSM(A) F=50Hz SMTPB---SERIES FIG.2 -- RELATIVE VARIATION OF HOLDING DDDD DCURRENT VERSUS JUNCTION SSSS CTEMPERATURE. 2.0 IH[TJ]/IH[TJ=25℃] 1.8 1.6 1.4 1.2 1.0 60 30 0.8 0.6 0.4 TJ(℃) 0.2 t(s) 0 0.0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 -40 -20 0 20 40 60 80 100 FFFFFIG.3 -- RELATIVE VARIATION OF JUNCTION VVVVVVVV CAPACITANCE VERSUS REVERSE BBBBBBBB APPLIED VOLTAGE C[VR]/C[VR=1V] 1.0 FIG.4 -- ON-STATE CURRENT VERSUS ON-STATE YY YYY VOLTAGE IT(A) 100 F=1MH Z TJ =25℃ 0.5 10 0.2 VR(V) 0.1 1 10 100 300 1 0 1 2 3 4 VT(V) 5 6 7 8 9 10 FIG.5 -- TRANSIENT THERMAL IMPEDANCE JUNCTION TO AMBIENT VERSUS PULSE DURATION ZTH(J-a)( 100 /W) 10 1 tp(s) 0.1 0.01 0.1 1.0 10 100 1000 5000 www.galaxycn.com Document Number 0286006 BLGALAXY ELECTRICAL 4.