2N6121

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 Boca Semiconductor Corp. BSC 2N6121, 6122, 6123 2N6124, 6125, 6126 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 12 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 1.5 A; VCE = 2 V VCBO VCEO IC Ptot Tj VCEsat hFE 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 4.0 max. 40 max. 150 max. min. 25 max. 100 0.6 25 100 20 80 V V A W °C V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO All dimin sions in mm. K 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 5.0 V V V http://www.bocasemi.com Continental Device India Limited Data Sheet page: 1 Page 1 of 3 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 Collector current Collector current (Peak) Base current Total power dissipation up to TC = 25°C Derate above 25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 45 V IB = 0; VCE = 60 V IB = 0; VCE = 80 V VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 85 VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 80 mA IE = 0; VCB = 45 V IE = 0; VCB = 60 V IE = 0; VCB = 80 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1.5 A; IB = 0.15 A IC = 4 A; IB = 1.0 A Base-emitter on voltage IC = 1.5 A; VCE = 2 V D.C. current gain IC = 1.5 A; VCE = 2 V IC ICM IB Ptot Tj Tstg Rth j–c max. max. max. max. max. max. 4.0 7.0 1.0 40 320 150 –65 to +150 3.12 A A A W mW °C / °C ºC °C/W 6121 6122 6123 6124 6125 6126 max. 1.0 – max. – 1.0 max. – – max. 0.1 – max. – 0.1 max. – – ICEX max. 2.0 ICEX max. – ICEX max. – max. 0.1 max. – max. – max. min. 45 min. 45 min. max. max. max. min. 25 max. 100 min. 10 min. min. – 0.1 – 1.0 60 60 5.0 0.6 1.4 1.2 25 100 10 25 2.5 MHz 20 80 7.0 80 80 – – 1.0 – – 0.1 – 2.0 – mA mA mA mA mA mA – mA – mA 2.0 V V V V; V; V; ICEO ICEO ICEO ICEX ICEX ICEX T C = 125°C T C = 125°C T C = 125°C ICBO ICBO ICBO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* hFE* hfe fT – mA – mA 0.1 mA mA V V V V V V IC = 4 A; VCE = 2 V Small signal current IC = 0.1 A; VCE = 2 V; f = 1.0 KHz Transition frequency at f = 1 MHz IC = 1 A; VCE = 4 V * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3