BD244B-S

BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD243 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. This series is OBSOLETEAND not recommended for new designs. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD244 Collector-emitter voltage (RBE = 100 Ω) BD244A VCER BD244C BD244 Collector-emitter voltage (IC = -30 mA) Emitter-base voltage Continuous collector current BD244A BD244B BD244C UNIT -55 E T E L O S B O BD244B VALUE V CEO VEBO IC -70 V -90 -115 -45 -60 V -80 -100 -5 V -6 A Peak collector current (see Note 1) ICM -10 Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W ½LIC2 62.5 mJ Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB Ptot -3 2 Tj -65 to +150 TL 250 Tstg -65 to +150 A A W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) BD244 -45 BD244A -60 BD244B -80 BD244C -100 TYP MAX V VCE = -55 V VBE = 0 BD244 -0.4 Collector-emitter VCE = -70 V VBE = 0 BD244A -0.4 cut-off current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V VBE = 0 BD244C -0.4 Collector cut-off VCE = -30 V IB = 0 BD244/244A -0.7 current VCE = -60 V IB = 0 BD244B/244C -0.7 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -0.3 A transfer ratio VCE = -4 V IC = -3 A IB = -1 A IC = -6 A VCE = -4 V IC = -6 A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio UNIT mA mA -1 mA (see Notes 5 and 6) -1.5 V (see Notes 5 and 6) -2 V (see Notes 5 and 6) 30 15 E T E L O S B O VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.92 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -1 A IB(on) = -0.1 A IB(off) = 0.1 A toff Turn-off time VBE(off) = 3.7 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AH VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 -0·1 TCS634AE -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -1·0 -0·1 E T E L O S B O -1·0 -10 -0·01 -0·001 IC - Collector Current - A -0·01 -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·2 TCS634AF VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·1 -1·0 -0·9 -0·8 -0·7 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3.
  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS634AD tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD244 BD244A BD244B BD244C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.