BD539C

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS ● ● ● ● Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD539 BD539A Collector-base voltage BD539B BD539C BD539D BD539 BD539A Collector-emitter voltage (see Note 1) BD539B BD539C BD539D Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL V CEO V CBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS BD539 V(BR)CEO Collector-emitter breakdown voltage BD539A IC = 30 mA (see Note 4) VCE = 40 V ICES Collector-emitter cut-off current VCE = 60 V VCE = 80 V VCE = 100 V VCE = 120 V ICEO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 30 V VCE = 60 V VCE = 90 V VEB = VCE = VCE = VCE = 5V 4V 4V 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = IC = IC = IC = IC = 1A 3A 1A 3A 5A 3A (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 (see Notes 4 and 5) (see Notes 4 and 5) 40 30 12 0.25 0.8 1.5 1.25 V V IB = 0 BD539B BD539C BD539D BD539 BD539A BD539B BD539C BD539D BD539/539A BD539B/539C BD539D MIN 40 60 80 100 120 0.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 1 mA mA mA V TYP MAX UNIT IEBO hFE IB = 125 mA IB = 375 mA IB = VCE = 1A 4V V CE(sat) VBE(on) hfe VCE = 10 V VCE = 10 V IC = 0.5 A IC = 0.5 A |hfe | NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.78 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = 1 A VBE(off) = -4.3 V IB(on) = 0.1 A RL = 3 0 Ω † MIN IB(off) = -0.1 A tp = 20 µs, dc ≤ 2% TYP 0.5 2 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% TCS631AH COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10 TCS631AB TC = 25°C TC = 80°C hFE - DC Current Gain 1·0 100 0·1 IC = IC = IC = IC = 0·01 0·1 100 mA 300 mA 1A 3A 1·0 10 100 1000 10 0·01 0·1 1·0 10 IC - Collector Current - A IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 VCE = 4 V TC = 25°C VBE - Base-Emitter Voltage - V 0·9 TCS631AC 0·8 0·7 0·6 0·5 0·01 0·1 1·0 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS631AI IC - Collector Current - A 1·0 0·1 BD539 BD539A BD539B BD539C BD539D 10 100 1000 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 50 Ptot - Maximum Power Dissipation - W TIS631AC 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5