BD745A-S

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) E T E L O S B O BD745B V CBO 70 90 BD745C 110 BD745 45 BD745A BD745B UNIT 50 BD745 BD745A VALUE VCEO BD745C 60 80 V V 100 VEBO 5 V IC 20 A ICM 25 A IB 7 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 115 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W ½LIC2 90 mJ Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter TEST CONDITIONS MIN 45 BD745A 60 BD745B 80 BD745C 100 TYP MAX IC = 30 mA IB = 0 VCE = 50 V VBE = 0 BD745 0.1 VCE = 70 V VBE = 0 BD745A 0.1 VCE = 90 V VBE = 0 BD745B 0.1 Collector cut-off VCE = 110 V VBE = 0 BD745C 0.1 current VCE = 50 V VBE = 0 TC = 125°C BD745 5 VCE = 70 V VBE = 0 TC = 125°C BD745A 5 VCE = 90 V VBE = 0 TC = 125°C BD745B 5 VCE = 110 V VBE = 0 TC = 125°C BD745C Collector cut-off VCE = 30 V IB = 0 BD745/745A 0.1 current VCE = 60 V IB = 0 BD745B/745C 0.1 VEB = 5V IC = 0 VCE = 4V IC = 1 A breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio (see Note 5) BD745 4V IC = 5 A VCE = 4V IC = 20 A V mA 5 0.5 mA mA 40 E T E L O S B O VCE = UNIT (see Notes 5 and 6) 20 150 5 IB = 0.5 A IC = 5 A IB = 5A IC = 20 A VCE = 4V IC = 5 A VCE = 4V IC = 20 A VCE = 10 V IC = 1 A f = 1 kHz 25 VCE = 10 V IC = 1 A f = 1 MHz 5 1 (see Notes 5 and 6) 3 1 (see Notes 5 and 6) 3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN td Delay time 20 ns tr Rise time IC = 5 A IB(on) = 0.5 A IB(off) = -0.5 A 350 ns ts Storage time VBE(off) = -4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 500 ns tf Fall time 400 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT hFE - DC Current Gain TC = 125°C TC = 25°C TC = -55°C 0·1 1·0 IC = 10 IB tp = 300µs, duty cycle < 2% 1·0 0·1 E T E L O S B O VCE = 4 V tp = 300 µs, duty cycle < 2% 10 TCS635AF 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS635AE 100 10 100 0·01 0·1 1·0 IC - Collector Current - A TC = -55°C TC = 25°C TC = 125°C 10 100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS635AC tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD745 BD745A BD745B BD745C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 3.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AB Ptot - Maximum Power Dissipation - W 120 100 80 60 40 E T E L O S B O 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.