BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
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1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDX33 BDX33A Collector-base voltage (IE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-emitter voltage (IB = 0) BDX33B BDX33C BDX33D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating free air temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS BDX33 V(BR)CEO Collector-emitter breakdown voltage BDX33A IC = 100 mA IB = 0 (see Note 3) BDX33B BDX33C BDX33D VCE = 30 V VCE = 30 V VCE = 40 V VCE = 50 V ICEO Collector-emitter cut-off current VCE = 60 V VCE = 30 V VCE = 30 V VCE = 40 V VCE = 50 V VCE = 60 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V IEBO Emitter cut-off current VEB = VCE = hFE Forward current transfer ratio VCE = VCE = VCE = VCE = VCE = VBE(on) Base-emitter voltage VCE = VCE = VCE = VCE = IB = VCE(sat) Collector-emitter saturation voltage IB = IB = IB = IB = VEC Parallel diode forward voltage IE = 5V 3V 3V 3V 3V 3V 3V 3V 3V 3V 3V 8 mA 8 mA 6 mA 6 mA 6 mA 8A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D 750 750 750 750 750 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4 V V V TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D MIN 45 60 80 100 120 0.5 0.5 0.5 0.5 0.5 10 10 10 10 10 1 1 1 1 1 5 5 5 5 5 10 mA mA mA V TYP MAX UNIT
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
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AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
thermal characteristics
PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.78 62.5 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER ton toff
†
TEST CONDITIONS IC = 3 A VBE(off) = -3.5 V IB(on) = 12 mA RL = 1 0 Ω
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MIN IB(off) = -12 mA tp = 20 µ s, dc ≤ 2%
TYP 1 5
MAX
UNIT µs µs
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AF
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100
TCS130AH
hFE - Typical DC Current Gain
TC = -40°C TC = 25°C TC = 100°C 10000
1·5
1000
1·0
VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10
TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 1·0 IC - Collector Current - A 10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C
TCS130AJ
2·5
2·0
1·5
1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 IC - Collector Current - A 10
Figure 3.
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AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C
TIS130AB
Figure 4.
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
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AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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