0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BDX34B

BDX34B

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

  • 描述:

    BDX34B - PNP SILICON POWER DARLINGTONS - Bourns Electronic Solutions

  • 数据手册
  • 价格&库存
BDX34B 数据手册
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDX34 BDX34A Collector-base voltage (IE = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Collector-emitter voltage (IB = 0) BDX34B BDX34C BDX34D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating free air temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDX34 V(BR)CEO Collector-emitter breakdown voltage BDX34A IC = -100 mA IB = 0 (see Note 3) BDX34B BDX34C BDX34D VCE = -30 V VCE = -30 V VCE = -40 V VCE = -50 V ICEO Collector-emitter cut-off current VCE = -60 V VCE = -30 V VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IEBO Emitter cut-off current VEB = VCE = hFE Forward current transfer ratio VCE = VCE = VCE = VCE = VCE = VBE(on) Base-emitter voltage VCE = VCE = VCE = VCE = IB = VCE(sat) Collector-emitter saturation voltage IB = IB = IB = IB = VEC Parallel diode forward voltage IE = -5 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -8 mA -8 mA -6 mA -6 mA -6 mA -8 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D 750 750 750 750 750 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -4 V V V TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C TC = 100°C BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -1 -1 -1 -1 -1 -5 -5 -5 -5 -5 -10 mA mA mA V TYP MAX UNIT NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.78 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 1 0 Ω † MIN IB(off) = 12 mA tp = 20 µ s, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS135AF COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 TCS135AH hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·5 1000 -1·0 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS135AJ -2·5 -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS130AB Figure 4. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP
BDX34B 价格&库存

很抱歉,暂时无法提供与“BDX34B”相匹配的价格&库存,您可以联系我们找货

免费人工找货