BU426

BU426, BU426A NPN SILICON POWER TRANSISTORS ● ● Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BU426 BU426A BU426 BU426A BU426 BU426A SYMBOL V CBO VCES VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 800 900 800 900 375 400 6 10 +2, -0.1 ±3 70 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage IC = 100 mA VCE = 800 V ICES VCE = 900 V VCE = 800 V VCE = 900 V IEBO hFE VCE(sat) VBE(sat) VEB = VCE = IB = IB = IB = IB = 10 V 5V 0.5 A 1.25 A 0.5 A 1.25 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 IC = 0.6 A IC = 2.5 A IC = IC = 4A 4A IC = 2.5 A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 30 TC = 125°C TC = 125°C (see Note 2) BU426 BU426A BU426 BU426A BU426 BU426A MIN 375 400 1 1 2 2 10 60 1.5 3 1.4 1.6 V V mA mA TYP MAX UNIT V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 1.1 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton ts tf tf † TEST CONDITIONS IC = 2.5 A VCC = 250 V IC = 2.5 A VCC = 250 V IB(on) = 0.5 A † MIN IB(off) = -1 A TYP 0.3 2 0.15 MAX 0.6 3.5 UNIT µs µs µs Turn on time Storage time Fall time Fall time (see Figures 1 and 2) IB(on) = 0.5 A TC = 95°C IB(off) = -1 A 0.2 0.75 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BU426, BU426A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µF 100 Ω T V1 tp 47 Ω 100 µF V cc = 250 V TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µF tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µ s dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BU426, BU426A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 1.5 V VCE = 5 V hFE - Typical DC Current Gain VCE(sat) - Collector-Emitter Saturation Voltage - V 100 TCP741AF COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 7 TCP741AG TC = 25°C 6 IC = IC = IC = IC = 4 3 2 1 A A A A 5 4 10 3 2 1 1·0 0·1 0 1·0 IC - Collector Current - A 10 0 0·5 1·0 IB - Base Current - A 1·5 2·0 Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 7 TCP741AH BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V TC = 25°C 1·1 TCP741AI TC = 100°C 6 IC = IC = IC = IC = 4 3 2 1 A A A A 5 1·0 4 0·9 3 0·8 IC = IC = IC = IC = 0 0·2 0·4 0·6 0·8 1·0 1·2 4 3 2 1 A A A A 1·6 2 1 0·7 0 0 0·5 1·0 IB - Base Current - A 1·5 2·0 0·6 1·4 IB - Base Current - A Figure 5. Figure 6. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BU426, BU426A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAP741AA IC - Collector Current - A 10 1·0 tp = tp = 0.1 tp = tp = tp = 0.2 µs 0.5 µs 1 µs 2 µs 6 µs BU426 BU426A 10 100 1000 20 µs tp = DC Operation 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 7. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BU426, BU426A NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP