BUL770

BUL770 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted ) RATING Collector-emitter voltage (VBE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak collector current (see Note 2) Continuous base current Peak base current (see Note 2) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BUL770 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO V BE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage IC = 100 mA VCE = 700 V VCE = 700 V VEB = 9V TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 800 mA IC = 800 mA IC = 800 mA IC = 800 mA IC = 10 mA IC = 800 mA IC = 3.2 A (see Notes 4 and 5) TC = 90°C (see Notes 4 and 5) TC = 90°C 10 7 2 0.83 0.75 0.18 0.22 18.5 14.5 7.5 870 21 14 mV 0.25 TC = 90°C (see Note 3) MIN 400 10 200 1 0.9 TYP MAX UNIT V µA mA V V IB = 160 mA IB = 160 mA IB = 160 mA IB = 160 mA VCE = VCE = VCE = 1V 1V 5V hFE VFCB ICB = 60 mA NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics PARAMETER R θJA R θJC Junction to free air thermal resistance Junction to case thermal resistance MIN TYP MAX 62.5 2.5 UNIT °C/W °C/W inductive-load switching characteristics at 25°C case temperature PARAMETER tsv tfi txo tsv tfi Storage time Current fall time Cross over time Storage time Current fall time IC = 800 mA L = 1 mH IC = 800 mA L = 1 mH TEST CONDITIONS IB(on) = 160 mA IB(off) = 320 mA IB(on) = 160 mA IB(off) = 100 mA VCC = 40 V VCLAMP = 300 V VCC = 40 V VCLAMP = 300 V MIN TYP 2.5 150 300 4.3 140 MAX 3 190 400 5 200 UNIT µs ns ns µs ns resistive-load switching characteristics at 25°C case temperature PARAMETER tsv tfi Storage time Current fall time IC = 800 mA VCC = 300 V TEST CONDITIONS IB(on) = 160 mA IB(off) = 160 mA MIN TYP 2.5 150 MAX 3.4 250 UNIT µs ns 2 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUL770 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT TC = 25°C hFE - Forward Current Transfer Ratio VCE(sat) - Collector-Emitter Saturation Voltage - V 30 L770CHF COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 IB = I C / 5 TC = 25°C TC = 90°C L770CVB 10 1·0 0·1 VCE = 1 V V CE = 5 V 1·0 0·01 0·1 1·0 10 0·01 0·1 1·0 IC - Collector Current - A 10 IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) = IC / 5 IB(off) = IC / 2.5 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C L770CI1 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 L770CI3 Inductive Switching Time - µs 1·0 Inductive Switching Time - µs tsv txo tfi IB(on) = 160 mA, VCC = 40 V, L = 1 mH IB(off) = 320 mA, VCLAMP = 300 V, IC = 800 mA 1·0 0·1 t sv t fi 0·01 0·1 0·1 1·0 IC - Collector Current - A 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 3. Figure 4. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BUL770 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) = IC / 5 IB(off) = IC / 8 VCC = 40 V VCLAMP = 300 V L = 1 mH = 25°C TC 1·0 L770CI2 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 L770CI4 tsv tfi Inductive Switching Time - µs IB(on) = 160 mA, VCC = 40 V, L = 1 mH IB(off) = 100 mA, VCLAMP = 300 V, IC = 800 mA Inductive Switching Time - µs 1·0 t sv t fi 0·1 0·1 0·1 1·0 IC - Collector Current - A 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 5. Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) IB(off) Resistive Switching Time - µs = IC / 5, VCC = 300 V = IC / 5, TC = 25°C Resistive Switching Time - µs L770CR1 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 IB(on) = 160 mA, VCC = 300 V IB(off) = 160 mA, IC = 800 mA L770CR2 1·0 1·0 tsv tfi 0·1 0·1 0·1 1·0 IC - Collector Current - A 10 0 t sv t fi 20 40 60 80 100 TC - Case Temperature - °C Figure 7. Figure 8. 4 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BUL770 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 L770CFB MAXIMUM REVERSE-BIAS SAFE OPERATING AREA 8 L770CRB IB(on) = IC / 5 VBE(off) = -5 V TC = 25°C IC - Collector Current - A 10 100 1000 IC - Collector Current - A 6 1·0 4 0·1 TC = 25°C tp = 10 µs tp = 1 m s tp = 10 ms DC Operation 2 0·01 1·0 0 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V Figure 9. Figure 10. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BUL770 NPN SILICON POWER TRANSISTOR MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP