TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH4BJ Overvoltage Protector Series
ITU-T K.20/21 Rating
........................ 8 kV 10/700, 200 A 5/310
High Holding Current ...........225 mA min.
SMBJ Package (Top View)
Click these links for more information:
R(B) 1
2
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
VDRM
V
V(BO)
V
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
135
145
155
200
230
275
165
180
200
265
300
350
Rated for International Surge Wave
Shapes
Wave
Shape
Standard
ITSP
A
2/10 μs
GR-1089-CORE
500
8/20 μs
IEC 61000-4-5
300
10/160 μs
FCC Part 68
250
10/700 μs
ITU-T K.20/21
200
10/560 μs
FCC Part 68
160
10/1000 μs
GR-1089-CORE
100
Additional Information
T(A)
MDXXBG
PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY
CONTACT
Agency Recognition
Device Symbol
Description
T
UL
File Number: E215609
Low Differential Capacitance.. 67 pF max.
............UL Recognized Component
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are
normally caused by a.c. power system or lightning flash disturbances which are induced
or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of 2-wire telecommunication equipment (e.g., between the
Ring and Tip wires for telephones and modems). Combinations of devices can be used for
multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages
are initially clipped by breakdown clamping until the voltage rises to the breakover level,
which causes the device to crowbar into a low-voltage on state. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device.
The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.
How to Order
Device
TISP4xxxH4BJ
Package
BJ (J-Bend DO-214AA/SMB)
Carrier
Order As
Embossed Tape Reeled
TISP4xxxH4BJR-S
Bulk Pack
TISP4xxxH4BJ-S
Insert xxx value corresponding to protection voltages of 165 through to 350.
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
NOVEMBER 1997 – REVISED JULY 2019
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaranteed
to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic
package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current
values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Symbol
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/200 μs (VDE 0433, 10/700 μs voltage wave shape)
0.2/310 μs (I3124, 0.5/700 μs voltage wave shape)
5/310 μs (ITU-T K .20/21, 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
VDRM
ITSP
Value
±135
±145
±155
±200
±230
±275
500
300
250
220
200
200
200
160
100
Unit
V
A
ITSM
55
60
2.1
A
diT/dt
TJ
Tstg
400
-40 to +150
-65 to +150
A/μs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH4BJ must be in thermal equilibrium with TJ = 25 °C.
The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
dv/dt = ±750V/ms, RSOURCE = 300 Ω
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
dv/dt = ±750V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 μs
IT = ±5 A, di/dt = -/+30 mA/ms
Off-state capacitance
±0.225
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
NOTE
Typ.
±0.15
f = 100 kHz, Vd = 1 V rms, VD = -1 V
Coff
Min.
TA = 25 °C
TA = 85 °C
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
Max.
±5
±10
±165
±180
±200
±265
±300
±350
±174
±189
±210
±276
±311
±363
±0.8
±3
±0.8
±5
TA = 85 °C
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
Unit
μA
V
V
A
V
A
kV/μs
±10
90
84
79
67
74
62
35
28
33
26
μA
80
70
71
60
65
55
30
24
28
22
Typ.
Max.
Unit
pF
6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Thermal Characteristics
Parameter
RθJA
NOTE
Junction to free air thermal resistance
Test Conditions
Min.
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
113
°C /W
50
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAG
100
NORMALIZED BREAKDOWN VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
1.10
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - μA
10
1
0·1
0·01
1.05
1.00
0.95
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
-25
150
Figure 2.
200
150
100
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
Normalized Holding Current
IT - On-State Current - A
20
15
10
7
5
4
3
1
TC4HAK
1.5
50
40
30
1
0.7
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
2.0
TC4HAHA
TA = 25 °C
tW = 100 μs
'4265
THRU
'4350
150
Figure 3.
70
2
1.5
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 4.
0.9
0.8
0.7
0.6
0.5
'4165
THRU
'4200
1.5
2
3
4 5
V - On-State Voltage - V
1.0
0.4
7
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
1
TC4HAIA
0.7
0.6
'4165 THRU '4200
0.5
'4265 THRU '4350
0.4
0.3
1
2
3
5
10
20 30 50
VD - Off-state Voltage - V
Figure 6.
100150
'4300
'4265
'4200
'4165
35
'4180
TJ = 25 °C
Vd = 1 Vrms
0.8
C - Differential Off-State Capacitance - pF
Capacitance Normalized to V D = 0
TCHAJA
36
0.9
0.2
0.5
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
'4350
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
34
33
ΔC = Coff(-2 V) - Coff(-50 V)
32
31
30
130
150
170
200
230
270
VDRM - Repetitive Peak Off-State Voltage - V
300
Figure 7.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HAC
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
20
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
15
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
THERMAL IMPEDANCE
vs
POWER DURATION
100
70
50
40
30
20
15
10
7
5
4
3
1
0·1
1000
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
2
1.5
t - Current Duration - s
1
10
1000
Figure 9.
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4HAFA
700
600
0.99
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TC4HAA
BELLCORE 2/10
500
400
Impulse Current - A
0.98
Derating Factor
100
t - Power Duration - s
Figure 8.
1.00
TI4HAE
150
ZθJA(t) - Transient Thermal Impedance - °C/W
ITSM(t) - Non-Repetitive Peak On-State Current - A
Typical Characteristics
0.97
'4165 THRU '4200
0.96
0.95
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
120
0.94
BELLCORE 10/1000
'4265 THRU '4350
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 11.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or
in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3
Th1
Th1
Th2
Figure 12. Two Point Protectio n
Figure 13. Multi-point Protection
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect
circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor
and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO) value.
If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not
required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
μs
2/10
10/1000
10/160
10/560
9/720 †
9/720 †
0.5/700
Peak Current
Value
A
Current
Waveform
μs
TISP4xxxH4
25 C Rating
A
Series
Resistance
Ω
2500
500
2/10
500
0
1000
100
10/1000
100
1500
200
10/160
250
0
800
100
10/560
160
0
FCC Part 68
(March 1998)
1500
37.5
5/320 †
200
0
1000
25
5/320 †
200
0
I3124
1500
37.5
0.2/310
200
0
37.5
1500
5/310
200
0
10/700
ITU-T K.20/K.21
100
4000
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
GR-1089-CORE
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus
time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit
imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given
in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be
less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of 200 V, can be used for the protection of ring generators
producing 100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V.
However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when
the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of -22 °C. In
this example, the TISP4265H4BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall
below -22 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3
mm (3.0 ˝ x 4.5 ˝) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a
worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher
power levels than indicated by the JESD51 values.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Typical Circuits
MODEM
TIP
WIRE
RING
FUSE
R1a
RING DETECTOR
Th3
HOOK SWITCH
TISP4350H4
PROTECTED
EQUIPMENT
Th1
D.C. SINK
Th2
SIGNAL
TIP
AI6XBPA
E.G. LINE CARD
R1b
RING
WIRE
AI6XBK
Figure 14. Modem Inter-wire Protection
Figure 15. Protection Module
R1a
Th3
SIGNAL
Th1
Th2
R1b
AI6XBL
D.C.
Figure 16. ISDN Protection
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
S3a
R1a
Th3
SLIC
PROTECTION
Th4
S2a
S1a
SLIC
Th1
Th2
RING
WIRE
Th5
R1b
S3b
S1b
S2b
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
C1
220 nF
TEST
EQUIPMENT
RING
GENERATOR
VBAT
AI6XBJ
Figure 17. Line Card Ring/Test Protection
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxH4BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Footprint
SMB Pad Size
2.54
(.100)
2.40
(.094)
2.16
(.085)
DIMENSIONS ARE:
METRIC
(INCHES)
MDXXBI
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
TISP4165H4BJ
TISP4180H4BJ
TISP4200H4BJ
TISP4265H4BJ
TISP4300H4BJ
TISP4350H4BJ
Symbolization
Code
4165H4
4180H4
4200H4
4265H4
4300H4
4350H4
Carrier Information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in
the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk
pack or embossed tape.
Carrier
Embossed Tape Reel Pack
Bulk Pack
Order As
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Legal Disclaimer Notice
This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and
P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹
Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change
^P[OV\[UV[PJL
工商网监
湘ICP备2023018690号
