TISP4240H3LM

PL IA NT CO M *R oH S TISP4070H3LM THRU TISP4115H3LM, TISP4125H3LM THRU TISP4220H3LM, TISP4240H3LM THRU TISP4400H3LM BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH3LM Overvoltage Protector Series TISP4xxxH3LM Overview This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP4xxxH3LM is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3LM meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and B impulse tests. These devices are housed in a through-hole DO-92 package (TO-92 package with cropped center leg). Summary Electrical Characteristics TISP4070H3 TISP4080H3 TISP4095H3 TISP4115H3 TISP4125H3 TISP4145H3 TISP4165H3 TISP4180H3 VDRM V 58 65 75 90 100 120 135 145 V(BO) V 70 80 95 115 125 145 165 180 VT @ IT V 3 3 3 3 3 3 3 3 IDRM A 5 5 5 5 5 5 5 5 I(BO) mA 600 600 600 600 600 600 600 600 IT A 5 5 5 5 5 5 5 5 IH mA 150 150 150 150 150 150 150 150 Co @ -2 V pF 120 120 120 120 65 65 65 65 Functionally Replaces P0640EC† P0720EC† P0900EC† P1100EC† TISP4220H3 TISP4240H3 TISP4250H3 TISP4260H3 TISP4290H3 TISP4300H3 TISP4350H3 TISP4395H3 TISP4400H3 160 180 190 200 220 230 275 320 300 220 240 250 260 290 300 350 395 400 3 3 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 600 600 600 600 600 600 600 600 600 5 5 5 5 5 5 5 5 5 150 150 150 150 150 150 150 150 150 65 55 55 55 55 55 55 55 55 P1800EC Part # E T E L O S B O P1300EC† P1500EC P2300EC† P2600EC† P3100EC P3500EC† † Bourns part has an improved protection voltage Summary Current Ratings ITSP A Parameter Waveshape Value 2/10 500 1.2/50, 8/20 300 10/160 250 NOVEMBER 1997 - REVISED JANUARY 2010 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 5/320 200 10/560 160 10/1000 100 ITSM A 1 cycle 60 Hz 60 di/dt A/μs 2/10 Wavefront 400 TISP4xxxH3LM Overvoltage Protector Series ITU-T K.20/21 Rating ............................ 8 kV 10/700, 100 A 5/310 LM Package (Top View) Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge VDRM V(BO) ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 V 58 65 75 90 100 120 135 145 V 70 80 95 115 125 145 165 180 ‘4220 ‘4240 ‘4250 ‘4260 ‘4290 ‘4300 ‘4350 ‘4395 ‘4400 160 180 190 200 220 230 275 320 300 220 240 250 260 290 300 350 395 400 Device T(A) NC R(B) 1 2 3 MD4XAT NC - No internal connection on pin 2 LMF Package (LM Package with Formed Leads) (Top View) T(A) 1 2 3 NC R(B) E T E L O S B O MD4XAKB NC - No internal connection on pin 2 Device Symbol T Rated for International Surge Wave Shapes Waveshape Standard 2/10 µs 8/20 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE ITSP R A 500 300 250 200 160 100 SD4XAA Terminals T and R correspond to the alternative line designators of A and B Low Differential Capacitance ...................................... 80 pF max. ................................................UL Recognized Component Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. How to Order Device TISP4xxxH3LM Package Straight Lead DO-92 (LM) Carrier Bulk Pack Tape and Reeled Formed Lead DO-92 (LMF) Tape and Reeled Order As TISP4xxxH3LM-S TISP4xxxH3LMR-S TISP4xxxH3LMFR-S NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc. TISP4xxxH3LM Overvoltage Protector Series Description (Continued) This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A 10/1000 TISP4xxxM3LM series is available. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 ‘4220 ‘4240 ‘4250 ‘4260 ‘4290 ‘4300 ‘4350 ‘4395 ‘4400 Value ± 58 ± 65 ± 75 ± 90 ±100 ±120 ±135 ±145 ±160 ±180 ±190 ±200 ±220 ±230 ±275 ±320 ±300 E T E L O S B O Repetitive peak off-state voltage, (see Note 1) Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5. VDRM ITSP 500 300 250 220 200 200 200 200 160 100 Unit V A ITSM 55 60 2.3 A diT/dt TJ Tstg 400 -40 to +150 -65 to +150 A/µs °C °C See Applications Information and Figure 10 for voltage values at lower temperatures. Initially, the TISP4xxxH3LM must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions. See Applications Information and Figure 11 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM TISP4xxxF3LMOvervoltage OvervoltageProtector ProtectorSeries Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current VD = ±V DRM V(BO) Breakover voltage dv/dt = ±750 V/ms, V(BO) Impulse breakover voltage dv/dt ≤ ±1000 Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A Linear current ramp, Maximum ramp value = ±10 A I(BO) VT IH dv/dt ID Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Test Conditions Min TA = 25 °C TA = 85 °C ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 ‘4220 ‘4240 ‘4250 ‘4260 ‘4290 ‘4300 ‘4350 ‘4395 ‘4400 ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 ‘4220 ‘4240 ‘4250 ‘4260 ‘4290 ‘4300 ‘4350 ‘4395 ‘4400 E T E L O S B O RSOURCE = dv/dt = ±750 V/ms, RSOURCE = IT = ±5 A,t W = 100 IT = ±5 A,d i/dt = - / +30 mA/ms ±0.15 ±0.15 Max ±5 ±10 ±70 ±80 ±95 ±115 ±125 ±145 ±165 ±180 ±220 ±240 ±250 ±260 ±290 ±300 ±350 ±395 ±400 ±78 ±88 ±103 ±124 ±134 ±154 ±174 ±189 ±230 ±250 ±261 ±271 ±301 ±311 ±362 ±408 ±413 ±0.6 ±3 ±0.6 ±5 Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = ±50 V Typ TA = 85 °C Unit V V A V A kV ±10 μA NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM TISP4xxxF3LM Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued) Parameter Test Conditions f = 100 kHz, Vd = 1 V rms, VD = 0, f = 100 kHz, Vd = 1 V rms, VD = -1 V Coff Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V E T E L O S B O f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE Parameter NOTE Typ 172 95 92 157 85 80 145 78 72 70 33 28 25 22 Max 218 120 115 200 110 100 185 100 90 90 43 35 33 28 Unit Typ Max Unit pF 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V. Thermal Characteristics R θJA Min 4070 thru ‘4115 ‘4125 thru ‘4220 ‘4240 thru ‘4400 ‘4070 thru ‘4115 ‘4125 thru ‘4220 ‘4240 thru ‘4400 ‘4070 thru ‘4115 ‘4125 thru ‘4220 ‘4240 thru ‘4400 ‘4070 thru ‘4115 ‘4125 thru ‘4220 ‘4240 thru ‘4400 ‘4125 thru ‘4220 ‘4240 thru ‘4400 Junction to free air thermal resistance Test Conditions Min EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 105 °C/W 55 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH VDRM -v IDRM E T E L O S B O IDRM ID VD ID VD VDRM +v IH I(BO) V(BO) VT IT ITSM Quadrant III Switching Characteristic ITSP -i PMXXAAB Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TCHAS 102 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE 1.10 TC4HAF VD = ±50 V Normalized Breakover Voltage |ID| - Off-State Current - µA 101 100 10-1 1.05 E T E L O S B O 10-2 10-3 10-4 1.00 0.95 10-5 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C -25 150 Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 200 150 100 TA = 25 °C tW = 100 µs Normalized Holding Current IT - On-State Current - A 2 1.5 1 0.7 '4125 THRU '4220 '4240 THRU '4400 1 TC4HAD 1.5 20 15 5 4 3 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE 2.0 TC4HACB 50 40 30 7 150 Figure 3. 70 10 0 25 50 75 100 125 TJ - Junction Temperature - °C 1.0 0.9 0.8 0.7 0.6 0.5 '4070 THRU '4115 0.4 1.5 2 3 4 5 VT - On-State Voltage - V 7 Figure 4. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 5. 150 TISP4xxxH3LM Overvoltage Protector Series Typical Characteristics Capacitance Normalized to VD = 0 0.7 0.6 0.5 '4125 THRU '4220 0.3 '4240 THRU '4400 0.2 0.5 '4145 '4165 '4180 '4125 80 75 70 E T E L O S B O '4070 THRU '4115 0.4 85 '4115 TJ = 25 °C Vd = 1 Vrms 0.8 '4095 0.9 TCHATB 90 '4220 '4240 '4250 '4260 '4290 '4300 '4350 '4395 '4400 TC4HAQA '4070 '4080 1 DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE C - Differential Off-State Capacitance - pF NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE C = Coff(-2 V) - Coff(-50 V) 65 60 55 50 45 40 1 2 3 5 10 20 30 VD - Off-state Voltage - V Figure 6. 50 100150 50 60 70 80 90100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series Rating and Thermal Information THERMAL IMPEDANCE vs POWER DURATION 30 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) 20 EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 15 10 9 8 7 6 5 100 80 60 50 40 30 E T E L O S B O 4 3 2 1.5 0·1 1 10 100 20 15 10 8 1 10 100 1000 t - Power Duration - s Figure 8. Figure 9. IMPULSE RATING vs AMBIENT TEMPERATURE VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4HAIA 1.00 EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 3 2 0·1 1000 ITSM(t) APPLIED FOR TIME t 6 5 4 t - Current Duration - s 700 600 0.99 TC4HAA BELLCORE 2/10 500 400 Impulse Current - A 0.98 Derating Factor TI4HAG 150 ZθJA(t) - Transient Thermal Impedance - °C/W ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 0.97 '4070 THRU '4115 0.96 0.95 IEC 1.2/50, 8/20 300 FCC 10/160 250 ITU-T 10/700 200 FCC 10/560 150 '4125 THRU '4220 120 0.94 BELLCORE 10/1000 '4240 THRU '4440 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 10. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 TA - Ambient Temperature - °C Figure 11. TISP4xxxH3LM Overvoltage Protector Series APPLICATIONS INFORMATION Deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13). Th3 Th1 Th1 Th2 E T E L O S B O Figure 12. Two Point Protection Figure 13. Multi-point Protection In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required. Impulse Testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. Standard Peak Voltage Setting V Voltage Waveform µs 2/10 10/1000 10/160 10/560 9/720 † 9/720 † 0.5/700 Peak Current Value A Current Waveform µs TISP4xxxH3 25 °C Rating A Series Resistance Ω 2500 500 2/10 500 0 1000 100 10/1000 100 1500 200 10/160 250 0 800 100 10/560 160 0 FCC Part 68 (March 1998) 1500 37.5 5/320 † 200 0 1000 25 5/320 † 200 0 I3124 1500 37.5 0.2/310 200 0 37.5 1500 5/310 200 0 ITU-T K.20/K 21 10/700 100 4000 † FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 °C to 85 °C. AC Power Testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure). NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series APPLICATIONS INFORMATION Capacitance The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. Normal System Voltage Levels E T E L O S B O The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the maximum normal system voltages. The TISP4260H3LM, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of -28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -28 °C. JESD51 Thermal Measurement Method To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series Typical Circuits TIP WIRE MODEM FUSE TIP WIRE R1a RING DETECTOR Th3 HOOK SWITCH TISP4350 OR TISP4400 RING WIRE PROTECTED EQUIPMENT Th1 D.C. SINK E.G. LINE CARD Th2 SIGNAL AI6XBM R1b RING WIRE AI6XBK E T E L O S B O Figure 14. MODEM IN TER-WIRE PROTECTION Figure 15. PROTECTION MODULE R1a Th3 SIGNAL Th1 Th2 R1b AI6XBL D.C. Figure 16. ISDN PROTECTION OVERCURRENT PROTECTION TIP WIRE RING/TEST PROTECTION TEST RELAY RING RELAY SLIC RELAY S3a R1a Th3 S1a SLIC PROTECTION Th4 S2a SLIC Th1 Th2 RING WIRE Th5 R1b S3b S1b S2b TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF TEST EQUIPMENT RING GENERATOR VBAT AI6XBJ Figure 17. LINE CARD RING/TEST PROTECTION NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series MECHANICAL DATA Device Symbolization Code Devices will be coded as below. TISP4070H3LM TISP4080H3LM Symbolization Code 4070H3 4080H3 TISP4095H3LM TISP4115H3LM TISP4125H3LM TISP4145H3LM TISP4165H3LM TISP4180H3LM TISP4220H3LM TISP4240H3LM TISP4250H3LM TISP4260H3LM TISP4290H3LM TISP4300H3LM TISP4350H3LM TISP4395H3LM TISP4400H3LM 4095H3 4115H3 4125H3 4145H3 4165H3 4180H3 4220H3 4240H3 4250H3 4260H3 4290H3 4300H3 4350H3 4395H3 4400H3 Device Carrier Information E T E L O S B O Devices are shipped in one of the carriers below. A reel contains 2,000 devices. Package Type Straight Lead DO-92 Straight Lead DO-92 Carrier Bulk Pack Tape and Reeled Order As TISP4xxxH3LM-S TISP4xxxH3LMR-S Formed Lead DO-92 Tape and Reeled TISP4xxxH3LMFR-S “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.