TISP4260L3AJR-S

TISP4070L3AJ THRU TISP4395L3AJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxL3AJ Overvoltage Protector Series SMA (DO-214AC) Package 25% Smaller Placement Area than SMB Ion-Implanted Breakdown Region Precise and Stable Voltage VDRM V(BO) V V ‘4070 58 70 ‘4080 65 80 Device SMAJ Package (Top View) Additional Information Click these links for more information: R (B) 1 2 T (A) MDXXCCE Device Symbol PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY CONTACT Agency Recognition T ‘4090 70 90 ‘4125 100 125 ‘4145 120 145 ‘4165 135 165 ‘4180 145 180 ‘4220 160 220 ‘4240 180 240 ‘4260 200 260 ‘4290 230 290 ‘4320 240 320 ‘4350 275 350 ‘4360 290 360 Wave Shape Standard ‘4395 320 395 2/10 μs GR-1089-CORE 125 8/20 μs IEC 61000-4-5 100 Description UL File Number: E215609 ..............UL Recognized Component SD4XAA R Description T erminals T and R correspond to the alternative line designators of A and B Rated for International Surge Wave Shapes ITSP A 10/160 μs FCC Part 68 65 10/700 μs ITU-T K.20/21/45 50 10/560 μs FCC Part 68 40 10/1000 μs GR-1089-CORE 30 How to Order Device Package Carrier Order As TISP4xxxL3AJ SMA (DO-214AC) Embossed Tape Reel Pack TISP4xxxL3AJR-S These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. Insert xxx corresponding to protection voltages of 070, 080, 090, etc. WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov JULY 2000 – REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ (JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100 A 10/1000 TISP4xxxH3BJ series in SMB are available. TISP4xxxL3AJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, (see Note 1) Symbol ‘4070 ‘4080 ‘4090 ‘4125 ‘4145 ‘4165 ‘4180 ‘4220 ‘4240 ‘4260 ‘4290 VDRM Value ± 58 ± 65 ± 70 ± 100 ± 120 ± 135 ± 145 ± 160 ± 180 ± 200 ± 230 ‘4320 ± 240 ‘4350 ‘4360 ‘4395 ± 275 ± 290 ± 320 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 8/20 μs (IEC 61000-4-5,combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 μs (FCC Part 68, 10/160 μs voltage wave shape) 5/310 μs (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape) 5/310 μs (FTZ R12, 10/700 μs voltage wave shape) 10/560 μs (FCC Part 68, 10/560 μs voltage wave shape) 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 1 s (50 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. ITSP 125 100 65 50 50 40 30 ITSM 18 7 1.6 Unit V A A Junction temperature TJ -40 to +150 °C -65 to +150 °C Storage temperature range Tstg NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C. 2. Initially, the TISP4xxxL3 must be in thermal equilibrium with TJ = 25 °C 3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Recommended Operating Conditions Component RS Min Typ Max Unit series resistor for FCC Part 68, 10/560 type A surge survival 12 Ω series resistor for FCC Part 68, 9/720 type B surge survival 0 Ω 23 Ω series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival 0 Ω series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 7 Ω series resistor for GR-1089-CORE first-level and second-level surge survival Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current V(BO) Breakover voltage I(BO) IH dv/dt Test Conditions VD = VDRM dv/dt = ±250 V/ms, R SOURCE = 300 Ω Breakover current dv/dt = ±250 V/ms, Holding current I T = ±5 A, di/dt = +/-30 mA/ms Critical rate of rise of off-state voltage TA = 25 °C Min Max ±5 TA = 85 °C ±10 ‘4070 ±70 ‘4080 ±80 ‘4090 ±90 ‘4125 ±125 ‘4145 ±145 ‘4165 ±165 ‘4180 ±180 ‘4220 ±220 ‘4240 ±240 ‘4260 ±260 ‘4290 ±290 ‘4320 ±320 ‘4350 ±350 ‘4360 ±360 ‘4395 ±395 R SOURCE = 300 Ω Linear voltage ramp, Maximum ramp value < 0.85V DRM Typ ±0.15 Unit μA V ±0.8 A ±0.60 A ±5 kV/μs ‘4070, VD = ±52 V ‘4080, VD = ±59 V ‘4090, VD = ±63 V ‘4125, VD = ±90 V ‘4145, VD = ±108 V ‘4165, VD = ±122 V ‘4180, VD = ±131 V ID Off-state current ‘4220, VD = ±144 V ±2 μA ±10 μA ‘4240, VD = ±162 V ‘4260, VD = ±180 V ‘4290, VD = ±207 V ‘4320, VD = ±216 V ‘4350, VD = ±248 V ‘4360, VD = ±261 V ‘4395, VD = ±288 V ID Off-state current VD = ±50 V JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued) Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = ±1V Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = ±50 V Min 4070 thru ‘4090 ‘4125 thru ‘4220 ‘4240 thru ‘4395 ‘4070 thru ‘4090 ‘4125 thru ‘4220 ‘4240 thru ‘4395 Typ Max Unit 53 40 33 25 18 14 64 48 40 30 22 17 pF Typ Max Unit Thermal Characteristics Parameter RθJA Junction to free air thermal resistance Test Conditions Min EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 75) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 115 °C/W 52 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH V DRM -v IDRM ID VD ID IDRM VD VDRM +v IH I(BO) VT V(BO) IT ITSM I Quadrant III ITSP Switching Characteristic -i PMXXAAB Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC4LAG 10 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4LAF Normalized Breakover Voltage VD = ±50 V |ID| - Off-State Current - A 1 0·1 0·01 1.10 1.05 1.00 0.95 0.90 0·001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C -25 150 TC4MAM 2.0 tW = 100 μs 7 1 0.7 0.5 0.7 100 125 150 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4LAD 1.5 10 2 1.5 75 TA = 25 °C 20 15 5 4 3 50 Figure 3. Normalized Holding Current IT - On-State Current - A 50 40 30 25 TJ - Junction Temperature - °C Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 0 '4070 THRU '4090 '4240 THRU '4395 '4125 THRU '4220 1.0 0.9 0.8 0.7 0.6 0.5 0.4 1 1.5 2 3 4 5 VT - On-State Voltage - V Figure 4. 7 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 5. JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4LABC DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE 1 TCLAEB 30 0.9 Capacitance Normalized to VD = 0 0.7 ΔC - Differential Off-State Capacitance - pF TJ = 25 °C Vd = 1 Vrms 0.8 0.6 0.5 '4070 THRU '4090 0.4 '4125 THRU '4220 0.3 '4240 THRU '4395 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V 50 25 ΔC = Coff(-2 V) - Coff(-50 V) 20 15 10 50 100150 Figure 6. Figure 7. TYPICAL CAPACITANCE ASYMMETRY vs TC4LBB OFF-STATE VOLTAGE 1 |Coff(+VD) - C off(-VD) | — Capacitance Asymmetry — pF 60 70 80 90100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V Vd = 10 mV rms,1 MHz Vd = 1 Vrm s, 1 MHz 0 1 2 3 4 5 7 10 20 30 40 50 VD — Off-state Voltage - V Figure 6. JULY 2000 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL