TISP4290J3BJR-S

TISP4070J3BJ THRU TISP4395J3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge SMB Package (Top View) Additional Information Click these links for more information: R Designed for Transformer Center Tap (Ground Return) Overvoltage Protection -Enables GR-1089-CORE Compliance -High Holding Current Allows Protection of Data Lines with d.c. Power Feed 1 2 T PRODUCT TECHNICAL INVENTORY SAMPLES SELECTOR LIBRARY Agency Recognition Device Symbol Can be Used to Protect Rugged Modems Designed for Exposed Applications Exceeding TIA-968-A Description T UL Device Name VDRM V V(BO) V TISP4070J3BJ 58 70 TISP4080J3BJ 65 80 TISP4095J3BJ 75 95 TISP4115J3BJ 90 115 TISP4125J3BJ 100 125 TISP4145J3BJ 120 145 TISP4165J3BJ 135 165 TISP4180J3BJ 145 180 TISP4200J3BJ 155 200 CONTACT MD -S MB -0 04 -a File Number: E215609 ..............UL Recognized Component Description R SD -T IS P4 xx x- 001-a Rated for International Surge Wave Shapes Wave Shape Standard ITSP A 2/10 μs GR-1089-CORE 1000 IEC 61000-4-5 800 TISP4219J3BJ 180 219 8/20 μs TISP4250J3BJ 190 250 10/160 μs TIA-968-A 400 10/700 μs ITU-T K.20/21/45 350 TISP4290J3BJ 220 290 TISP4350J3BJ 275 350 10/560 μs TIA-968-A 250 TISP4395J3BJ 320 395 10/1000 μs GR-1089-CORE 200 How to Order Device Package Carrier Order As Marking Code Standard Quantity TISP4xxxJ3BJ SMB Embossed Tape Reeled TISP4xxxJ3BJR-S 4xxxJ3 3000 Insert xxx corresponding to device name. The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance. These devices allow signal voltages, without clipping, up to the maximum offstate voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH, level the devices switches off and restores normal system operation. Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com JULY 2003 – REVISED JULY 2019 WARNING Cancer and Reproductive Harm www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit VDRM ±58 ±65 ±75 ±90 ±100 ±120 ±135 ±145 ±155 ±180 ±190 ±220 ±275 ±320 V IPPSM ±1000 ±800 ±400 ±370 ±350 ±350 ±250 ±200 A ‘4070J3BJ ‘4080J3BJ ‘4095J3BJ ‘4115J3BJ ‘4125J3BJ ‘4145J3BJ ‘4165J3BJ ‘4180J3BJ ‘4200J3BJ ‘4219J3BJ ‘4250J3BJ ‘4290J3BJ ‘4350J3BJ ‘4395J3BJ Repetitive peak off-state voltage Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 μs voltage wave shape) 10/160 μs (TIA-968-A, 10/160 μs voltage wave shape) 4/250 μs (ITU-T K.20/21, 10/700 μs voltage waveshape, simultaneous) 5/310 μs (ITU-T K.20/21, 10/700 μs voltage wave shape, single) 5/320 μs (TIA-968-A, 9/720 μs voltage waveshape, single) 10/560 μs (TIA-968-A, 10/560 μs voltage wave shape) 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) ITSM 50 A d iT/dt 800 A/μs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C 20 ms, 50 Hz (full sine wave) Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM V(BO) Repetitive peak off-state curr ent AC Breakover voltage Test Conditions M in Typ M ax Unit VD = VDRM TA = 25 °C TA = 85 °C ±5 ±10 μA dv/d t = ± 250 V/ms, RSOURCE = 300 Ω ‘4070J3BJ ‘4080J3BJ ‘4095J3BJ ‘4115J3BJ ‘4125J3BJ ‘4145J3BJ ‘4165J3BJ ‘4180J3BJ ‘4200J3BJ ‘4219J3BJ ‘4250J3BJ ‘4290J3BJ ‘4350J3BJ ‘4395J3BJ ±70 ±80 ±95 ±115 ±125 ±145 ±165 ±180 ±200 ±219 ±250 ±290 ±350 ±395 V JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter V(BO) Ramp breakover voltage I(BO) Breakover current IH Holding current dv/dt Critical rate of rise of off-state voltage ID Off-state current Test Conditions dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±800 ‘4250J3BJ thru ‘4395J3BJ ±600 ± 150 Linear voltage ramp Maximum ramp value < 0.85VDRM ±600 ±5 V D = ±50 V f = 1 MHz, Vd = 1 V rms, VD = -2 V f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 3) Unit V mA mA kV/μs TA = 85 °C f = 1 MHz, Vd = 1 V rms, VD = -50 V NOTE: ‘4070J3BJ thru ‘4115J3BJ ‘4125J3BJ thru ‘4219J3BJ IT = ±5 A, di/dt = ±30 mA/ms f = 1 MHz, Vd = 1 V rms, VD = -1 V Off-state capacitance Typ Max ±77 ±88 ±104 ±125 ±135 ±156 ±177 ±192 ±212 ±231 ±263 ±303 ±364 ±409 ±900 dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/μs, Linear current ramp, Maximum ramp value = ±10 A f = 1 MHz, Vd = 1 V rms, VD = 0 CO Min ‘4070J3BJ ‘4080J3BJ ‘4095J3BJ ‘4115J3BJ ‘4125J3BJ ‘4145J3BJ ‘4165J3BJ ‘4180J3BJ ‘4200J3BJ ‘4219J3BJ ‘4250J3BJ ‘4290J3BJ ‘4350J3BJ ‘4395J3BJ ±10 ‘4070J3BJ thru ‘4115J3BJ 195 235 ‘4125J3BJ thru ‘4219J3BJ 120 145 ‘4250J3BJ thru ‘4395J3BJ 105 125 ‘4070J3BJ thru ‘4115J3BJ 180 215 ‘4125J3BJ thru ‘4219J3BJ 110 132 ‘4250J3BJ thru ‘4395J3BJ 95 115 ‘4070J3BJ thru ‘4115J3BJ 165 200 ‘4125J3BJ thru ‘4219J3BJ 100 120 ‘4250J3BJ thru ‘4395J3BJ 90 105 ‘4070J3BJ thru ‘4115J3BJ 85 100 ‘4125J3BJ thru ‘4219J3BJ 50 60 ‘4250J3BJ thru ‘4395J3BJ 42 50 ‘4125J3BJ thru ‘4219J3BJ 40 50 ‘4250J3BJ thru ‘4395J3BJ 35 40 μA pF 3. To avoid possible clipping, the TISP4125J3BJ is tested with VD = -98 V. Thermal Characteristics Parameter RθJA NOTE: Junction to ambient thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 4) Min Typ M ax U nit 90 °C/W 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V (BR)M V DRM -v I(BR) V (BR) V (BR) I(BR) IDRM VD ID ID IDRM VD +v V DRM V (BR)M IH I(BO) VT V(BO) IT ITRM ITSM Quadrant III Switching Characteristic I PPSM -i PM-TISP4xxx-001-a Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 TC4JAG 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF V D = ±50 V Normalized Breakover Voltage |I D| - Off-State Current - μA 10 1 0·1 0·01 0·001 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 2. 2.0 Figure 3. NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD 1 NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4JABB 0.9 Capacitance Normalized to VD = 0 Normalized Holding Current TJ = 25 °C V d = 1 Vrms 0.8 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 4. 150 150 0.7 0.6 0.5 0.4 0.3 0.2 0.5 1 2 3 5 10 20 30 50 V D - Off-state Voltage - V 100 150 Figure 5. JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Rating and Thermal Characteristics V DRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4JAA 40 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 30 20 15 0.99 0.98 10 9 8 7 6 5 0.97 0.96 0.95 4 '4070J3BJ thru '4115J3BJ '4125J3BJ thru '4219J3BJ 0.94 3 2 0·1 TI4JADCa 1.00 Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 1 10 100 t - Current Duration - s Figure 6. 1000 '4250J3BJ thru '4395J3BJ 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TA(MIN) - Minimum Ambient Temperature - °C Figure 7. JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Applications Information Protection Polarity Bridge Ring Detector F1 R High current Fuse Relay C1 R1 Th1 C2 D1 D2 D3 D4 D5 D6 Hook Switch T TISP 4350J3BJ C3 DC Sink R2 T1 Signal D7 Isolation Barrier OC1 AI4MMABB Figure 8. Typical Application Circuit F1a Tx T F1b R TISP4350J3BJ d.c. feed F2a Rx T F2b R TISP4350J3BJ F1 & F2 = B1250T AI4MMAB Figure 9. Typical Application Circuit Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. JULY 2003 – REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Legal Disclaimer Notice This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and P[ZHɉSPH[LZJVSSLJ[P]LS`¸)V\YUZ¹ Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change ^P[OV\[UV[PJL