TISP4070L3AJ THRU TISP4395L3AJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxL3AJ Overvoltage Protector Series
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
Ion-Implanted Breakdown Region
Precise and Stable Voltage
VDRM
V(BO)
V
V
‘4070
58
70
‘4080
65
80
Device
SMAJ Package (Top View)
Additional Information
Click these links for more information:
R (B) 1
2 T (A)
MDXXCCE
Device Symbol
PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY
CONTACT
Agency Recognition
T
‘4090
70
90
‘4125
100
125
‘4145
120
145
‘4165
135
165
‘4180
145
180
‘4220
160
220
‘4240
180
240
‘4260
200
260
‘4290
230
290
‘4320
240
320
‘4350
275
350
‘4360
290
360
Wave
Shape
Standard
‘4395
320
395
2/10 μs
GR-1089-CORE
125
8/20 μs
IEC 61000-4-5
100
Description
UL
File Number: E215609
..............UL Recognized Component
SD4XAA
R
Description
T erminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave
Shapes
ITSP
A
10/160 μs
FCC Part 68
65
10/700 μs
ITU-T K.20/21/45
50
10/560 μs
FCC Part 68
40
10/1000 μs
GR-1089-CORE
30
How to Order
Device
Package
Carrier
Order As
TISP4xxxL3AJ
SMA (DO-214AC)
Embossed Tape Reel Pack
TISP4xxxL3AJR-S
These devices are designed to limit
overvoltages on the telephone line.
Overvoltages are normally caused by a.c.
power system or lightning flash disturbances
which are induced or conducted on to the
telephone line. A single device provides
2-point protection and is typically used for
the protection of 2-wire telecommunication
equipment (e.g. between the Ring and
Tip wires for telephones and modems).
Combinations of devices can be used for
multi-point protection (e.g. 3-point protection
between Ring, Tip and Ground).
The protector consists of a symmetrical
voltage-triggered bidirectional thyristor.
Overvoltages are initially clipped by
breakdown clamping until the voltage rises
to the breakover level, which causes the
device to crowbar into a low-voltage on
state. This low-voltage on state causes the
current resulting from the overvoltage to be
safely diverted through the device. The high
crowbar holding current helps prevent d.c.
latchup as the diverted current subsides.
Insert xxx corresponding to protection voltages of 070, 080, 090, etc.
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
JULY 2000 – REVISED JULY 2019
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last
page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
The TISP4xxxL3 range consists of
fifteen voltage variants to meet various
maximum system voltage levels (58 V to
320 V). They are guaranteed to voltage
limit and withstand the listed international
lightning surges in both polarities. These
protection devices are in an SMAJ (JEDEC
DO-214AC with J-bend leads) plastic
package. These devices are supplied
in embossed tape reel carrier pack. For
alternative voltage and holding current
values, consult the factory. For higher
rated impulse currents, the 50 A 10/1000
TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB
are available.
TISP4xxxL3AJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Symbol
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
VDRM
Value
± 58
± 65
± 70
± 100
± 120
± 135
± 145
± 160
± 180
± 200
± 230
‘4320
± 240
‘4350
‘4360
‘4395
± 275
± 290
± 320
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5,combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/310 μs (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
ITSP
125
100
65
50
50
40
30
ITSM
18
7
1.6
Unit
V
A
A
Junction temperature
TJ
-40 to +150
°C
-65 to +150
°C
Storage temperature range
Tstg
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.
2. Initially, the TISP4xxxL3 must be in thermal equilibrium with TJ = 25 °C
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxL3AJ Overvoltage Protector Series
Recommended Operating Conditions
Component
RS
Min
Typ
Max
Unit
series resistor for FCC Part 68, 10/560 type A surge survival
12
Ω
series resistor for FCC Part 68, 9/720 type B surge survival
0
Ω
23
Ω
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
0
Ω
series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
7
Ω
series resistor for GR-1089-CORE first-level and second-level surge survival
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
V(BO) Breakover voltage
I(BO)
IH
dv/dt
Test Conditions
VD = VDRM
dv/dt = ±250 V/ms,
R SOURCE = 300 Ω
Breakover current
dv/dt = ±250 V/ms,
Holding current
I T = ±5 A, di/dt = +/-30 mA/ms
Critical rate of rise of
off-state voltage
TA = 25 °C
Min
Max
±5
TA = 85 °C
±10
‘4070
±70
‘4080
±80
‘4090
±90
‘4125
±125
‘4145
±145
‘4165
±165
‘4180
±180
‘4220
±220
‘4240
±240
‘4260
±260
‘4290
±290
‘4320
±320
‘4350
±350
‘4360
±360
‘4395
±395
R SOURCE = 300 Ω
Linear voltage ramp, Maximum ramp value < 0.85V DRM
Typ
±0.15
Unit
μA
V
±0.8
A
±0.60
A
±5
kV/μs
‘4070, VD = ±52 V
‘4080, VD = ±59 V
‘4090, VD = ±63 V
‘4125, VD = ±90 V
‘4145, VD = ±108 V
‘4165, VD = ±122 V
‘4180, VD = ±131 V
ID
Off-state current
‘4220, VD = ±144 V
±2
μA
±10
μA
‘4240, VD = ±162 V
‘4260, VD = ±180 V
‘4290, VD = ±207 V
‘4320, VD = ±216 V
‘4350, VD = ±248 V
‘4360, VD = ±261 V
‘4395, VD = ±288 V
ID
Off-state current
VD = ±50 V
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxL3AJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = ±1V
Coff
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = ±50 V
Min
4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
‘4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
Typ
Max
Unit
53
40
33
25
18
14
64
48
40
30
22
17
pF
Typ
Max
Unit
Thermal Characteristics
Parameter
RθJA
Junction to free air thermal resistance
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 75)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
115
°C/W
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxL3AJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V DRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
VT
V(BO)
IT
ITSM
I
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC4LAG
10
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4LAF
Normalized Breakover Voltage
VD = ±50 V
|ID| - Off-State Current - A
1
0·1
0·01
1.10
1.05
1.00
0.95
0.90
0·001
-25
0
25
50
75
100
125
TJ - Junction Temperature - °C
-25
150
TC4MAM
2.0
tW = 100 μs
7
1
0.7
0.5
0.7
100
125
150
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4LAD
1.5
10
2
1.5
75
TA = 25 °C
20
15
5
4
3
50
Figure 3.
Normalized Holding Current
IT - On-State Current - A
50
40
30
25
TJ - Junction Temperature - °C
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
0
'4070
THRU
'4090
'4240
THRU
'4395
'4125
THRU
'4220
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1
1.5
2
3
4 5
VT - On-State Voltage - V
Figure 4.
7
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4LABC
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
1
TCLAEB
30
0.9
Capacitance Normalized to VD = 0
0.7
ΔC - Differential Off-State Capacitance - pF
TJ = 25 °C
Vd = 1 Vrms
0.8
0.6
0.5
'4070 THRU '4090
0.4
'4125 THRU '4220
0.3
'4240 THRU '4395
0.2
0.5
1
2
3
5
10
20 30
VD - Off-state Voltage - V
50
25
ΔC = Coff(-2 V) - Coff(-50 V)
20
15
10
50
100150
Figure 6.
Figure 7.
TYPICAL CAPACITANCE ASYMMETRY
vs
TC4LBB
OFF-STATE VOLTAGE
1
|Coff(+VD) - C off(-VD) | — Capacitance Asymmetry — pF
60 70 80 90100
150
200 250 300 350
VDRM - Repetitive Peak Off-State Voltage - V
Vd = 10 mV rms,1 MHz
Vd = 1 Vrm s, 1 MHz
0
1
2
3
4 5
7
10
20
30 40 50
VD — Off-state Voltage - V
Figure 6.
JULY 2000 – REVISED JULY 2019
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Legal Disclaimer Notice
This legal disclaimer applies to purchasers and users of Bourns® products manufactured by or on behalf of Bourns, Inc. and
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Unless otherwise expressly indicated in writing, Bourns® products and data sheets relating thereto are subject to change
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