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BL-PWC-UJS-C10

BL-PWC-UJS-C10

  • 厂商:

    BRIGHT(博瑞泰)

  • 封装:

  • 描述:

    BL-PWC-UJS-C10 - Power DOMILED InGan High brightness surface mount LED. - BRIGHT LED ELECTRONICS COR...

  • 数据手册
  • 价格&库存
BL-PWC-UJS-C10 数据手册
AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED InGan BL-PWx-xJS Series • Feature: 1. High brightness surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Recommended Solder Pad V.5 Page: 1 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED InGan BL-PWx-xJS Series • Optical Characteristics: Part Number BL-PWB-SJS-C20 • • • Chip Technology Color InGaN / Blue, 470 nm Viewing Angle 120 Luminous Intensity @ If @ 30mA Iv ( mcd ) 90.0 … 180.0 90.0 … 112.5 112.5 … 140.0 140.0 … 180.0 112.5 … 224.0 112.5 … 140.0 140.0 … 180.0 180.0 … 224.0 140.0 … 285.0 140.0 … 180.0 180.0 … 224.0 224.0 … 285.0 BIN Q2 BIN R1 BIN R2 BL-PWB-SJS-C10 • • • BIN R1 BIN R2 BIN S1 BL-PWB-UJS-C10 • • • BIN R2 BIN S1 BIN S2 InGaN / Cyan, 505nm 120 BL-PWC-CJS-C10 • • • • BIN S1 BIN S2 BIN T1 BIN T2 180.0 … 450.0 180.0 224.0 285.0 355.0 … … … … 224.0 285.0 355.0 450.0 BL-PWC-SJS-C10 • • • • BIN T1 BIN T2 BIN U1 BIN U2 285.0 … 715.0 285.0 355.0 450.0 560.0 … … … … 355.0 450.0 560.0 715.0 BL-PWC-SJS-C20 • • • • BIN U1 BIN U2 BIN V1 BIN V2 450.0 … 1125.0 450.0 560.0 715.0 900.0 … … … … 560.0 715.0 900.0 1125.0 BL-PWC-UJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 450.0 … 1125.0 450.0 560.0 715.0 900.0 … … … … 560.0 715.0 900.0 1125.0 V.5 Page: 2 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED InGan BL-PWx-xJS Series • Optical Characteristics: Part Number BL-PWT-CJS-C10 • • • • BIN S1 BIN S2 BIN T1 BIN T2 Chip Technology Color InGaN / True Green, 525nm Viewing Angle 120 Luminous Intensity @ If @ 30mA Iv ( mcd ) 180.0 … 450.0 180.0 224.0 285.0 355.0 … … … … 224.0 285.0 355.0 450.0 BL-PWT-SJS-C10 • • • • BIN T1 BIN T2 BIN U1 BIN U2 285.0 … 715.0 285.0 … 355.0 … 450.0 … 560.0 … 355.0 450.0 560.0 715.0 BL-PWT-SJS-C20 • • • • BIN U1 BIN U2 BIN V1 BIN V2 450.0 … 1125.0 450.0 … 560.0 … 715.0 … 900.0 … 560.0 715.0 900.0 1125.0 BL-PWT-UJS-C10 • • • • BIN U1 BIN U2 BIN V1 BIN V2 InGaN / White (0.31, 0.31) 120 450.0 … 1125.0 450.0 … 560.0 … 715.0 … 900.0 … 560.0 715.0 900.0 1125.0 BL-PWW-SJD-C10 • • • • BIN T1 BIN T2 BIN U1 BIN U2 285.0 … 715.0 285.0 … 355.0 355.0 … 450.0 450.0 … 560.0 560.0 … 715.0 450.0 … 1125.0 BL-PWW-UJD-C10 • BIN U1 450.0 … 560.0 • BIN U2 560.0 … 715.0 • BIN V1 715.0 … 900.0 • BIN V2 900.0 … 1125.0 Note: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance Current pulsing should be used for dimming purposes. 5. An optional Vf binning is also available upon request. Binning scheme is as per following table. V.5 Page: 3 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Power DOMILED InGan BL-PWx-xJS Series Absolute Maximum Ratings: Maximum Value 30 200 5 125 -40 … +100 -40 … +100 135 Unit mA mA V °C °C °C mW Parameter DC forward current. Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005) Reverse voltage; Ir (max) = 10µA. LED junction temperature. Operating temperature. Storage temperature. Power dissipation ( at room temperature ) • Vf Binning: Forward voltage (V) 3.9 (typical), 4.55 (max) 3.35 … 3.65 3.65 … 3.95 3.95 … 4.25 4.25 … 4.55 Vf Bin @ 30mA Standard 30 31 32 33 • Forward voltage, Vf is measured with an accuracy of ±01 V. Wavelength Grouping: Color BL-PWB; Blue Group Full W X Y Z Full W X Y Full W X Y Z Wavelength is measured with an accuracy of ±1 nm. V.5 Page: 4 of 8 Wavelength (nm) @ 30mA 464 - 476 464 - 468 468 - 472 472 – 476 476 - 480 499 - 511 499 - 503 503 - 507 507 - 511 520- 536 520 - 524 524 - 528 528 – 532 532 – 536 BL-PWC; Cyan BL-PWT; True Green AMERICAN BRIGHT OPTOELECTRONICS CORP. • Power DOMILED InGan BL-PWx-xJS Series BL-PWW: White Color Grouping W hite Bin Structure 0.43 0.42 0.41 0.40 E3 0.39 0.38 0.37 0.36 E1 E2 E4 C3 0.35 0.34 C1 0.33 0.32 0.31 0.30 C4 A3 C2 A1 0.29 0.28 0.27 0.26 0.25 0.24 0.27 0.28 0.29 A4 A2 0.30 0.31 0.32 0.33 0.34 0.35 0.36 Chromaticity coordinate groups are measured with an accuracy of ±0.01. Bin A1 A2 A3 A4 C1 C2 C3 C4 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.2775 0.2732 0.2775 0.2557 0.2900 0.2939 0.2900 0.2764 0.3025 0.3146 0.3025 0.2971 0.3150 0.3354 0.3150 0.3179 W 0.2900 0.2939 0.2900 0.2764 0.3025 0.3146 0.3025 0.2971 0.3150 0.3354 0.3150 0.3179 0.3275 0.3561 0.3275 0.3386 0.2900 0.3114 0.2900 0.2939 0.3025 0.3321 0.3025 0.3146 0.3150 0.3529 0.3150 0.3354 0.3275 0.3736 0.3275 0.3561 0.2775 0.2907 0.2775 0.2732 0.2900 0.3114 0.2900 0.2939 0.3025 0.3321 0.3025 0.3146 0.3150 0.3529 0.3150 0.3354 Bin E1 Cx Cy E2 Cx Cy E3 Cx Cy E4 Cx Cy 0.3275 0.3561 0.3275 0.3386 0.3400 0.3768 0.3400 0.3593 X 0.3400 0.3768 0.3400 0.3593 0.3525 0.3975 0.3525 0.3800 0.3400 0.3943 0.3400 0.3768 0.3525 0.4150 0.3525 0.3975 0.3275 0.3736 0.3275 0.3561 0.3400 0.3943 0.3400 0.3768 V.5 Page: 5 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Relative intensity. Normalized at 30 mA. Power DOMILED InGan BL-PWx-xJS Series Typical electro-optical characteristics curves: Fig.1 Relative luminous intensity vs. forward current. Intensity vs. DC Forward Current 1.8 1.6 Fig.2 Forward current vs. forward voltage. Forward Current (mA) vs. Forward Voltage 60 50 1.4 1.2 1 0.8 0.6 0.4 Forward Current (mA) 0 10 20 30 40 50 60 40 30 20 10 0.2 0 FORWARD CURRENT (mA) 0 1.5 2 2.5 3 3.5 4 4.5 5 Forward Voltage (V) Fig.3 Radiation pattern. 30° 20° 10° 0° 40 Fig.4 Maximum forward current vs. temperature. 1.0 35 40° 0.8 Forward Current, If 30 MTTF > 5000 h 25 50° 0.6 20 15 MTTF > 10000 h 60° 70° 80° 90° 0.4 10 0.2 5 0 0 10 20 30 40 50 60 70 80 90 100 0 Ambient Temperature Fig.5 Relative Intensity vs Wavelength Fig.6 Dominant Wavelength vs Forward Current Relative Spectral Emission 1.0 0.9 White 0.8 Dominant Wavelength vs. Forward Current 470 469 540 Blue 535 Dom. WL (nm) Relative Intensity 0.7 Blue 0.6 0.5 True Green 0.4 0.3 0.2 0.1 0.0 400 468 530 467 525 466 465 520 True Green 464 450 500 550 600 650 700 750 800 515 0 10 20 30 IF (mA) 40 50 60 Wavelength (nm) V.5 Page: 6 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED InGan BL-PWx-xJS Series Fig. 7 Recommended IR-reflow Soldering Profile. Classification Reflow Profile (JEDEC J-STD-020B) 275 250 235-240oC 10-30s Ramp-up 3 oC/sec max. 225 200 183 oC 60-150s Temperature (oC) 175 150 125 Ramp-down 6 oC/sec max. Preheat 60-120s 100 75 50 360s max 25 0 50 100 150 200 Time (sec) Fig. 8 Recommended TTW Soldering Profile. V.5 Page: 7 of 8 AMERICAN BRIGHT OPTOELECTRONICS CORP. Power DOMILED InGan BL-PWx-xJS Series • Taping And Orientation: Reels come in quantity of 2000 units. Reel diameter is 180 mm. V.5 Page: 8 of 8
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